SMG3018K
640mA, 30V,RDS(ON)8Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Description
SC-59
A
The SMG3018K utilized advanced processing
techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG3018K is
universally used for all commercial-industrial
applications.
L
S
2
3
Top View
B
1
D
G
Features
J
C
* RoHS Compliant
* Simple Drive Requirement
K
H
Drain
* Small Package Outline
Gate
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
Source
Marking : 3018E
Dim
D
G
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Ratings
Unit
30
V
± 20
V
640
mA
ID@TA=70 C
500
mA
IDM
950
mA
1.38
W
0.01
W / oC
-55~+150
o
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
3
Continuous Drain Current
3
o
ID@TA=25 C
o
1,2
Pulsed Drain Current
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG3018K
640mA, 30V,RDS(ON)8Ω
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
N-Channel Enhancement Mode Power Mos.FET
Unless otherwise specified)
Symbol
Min.
BVDSS
30
BVDS/ Tj
_
VGS(th)
0.5
IGSS
o
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=70 oC)
Static Drain-Source On-Resistance
IDSS
Typ.
Max.
Unit
_
_
V
0.06
_
V/ C
_
2.0
V
VDS=VGS, ID=250uA
_
_
±10
uA
VGS=± 20V
_
_
1
uA
VDS=30V,VGS=0
_
_
100
uA
VDS=24V,VGS=0
_
_
8
RDS(ON)
_
Total Gate Charge 2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
_
Turn-on Delay Time 2
Rise Time
Fall Time
1
1.6
_
_
12
_
_
10
_
Td(Off)
_
56
Tf
_
29
_
_
32
50
_
8
_
_
6
_
Tr
Turn-off Delay Time
13
0.5
Td(ON)
nput Capacitance
Ciss
IOutput Capacitance
Coss
Reverse Transfer Capacitance
Crss
Forward Transconductance
Gfs
_
_
600
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VGS=4V, ID=10mA
Ω
_
0.5
o
Test Condition
_
VGS=2.5V, ID=1mA
nC
ID=600mA
VDS=50V
VGS=4.5V
VDD=30V
ID=600mA
nS
VGS=10V
RG=3.3 Ω
RD=52 Ω
_
pF
VGS=0V
VDS=25V
f=1.0MHz
mS
VDS=10V, ID=600mA
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
VDS
Min.
Typ.
_
_
Max.
Unit
Test Condition
1.2
V
IS=1.2 A, VGS=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG3018K
Elektronische Bauelemente
640mA, 30V,RDS(ON)8Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Char acteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Char acteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistan ce
v.s. Ju nction Temperat ure
Fig 6. Gate Threshold Voltage v.s.
Ju nction Temperat ure
Any changing of specification will not be informed individual
Page 3 of 4
SMG3018K
Elektronische Bauelemente
640mA, 30V,RDS(ON)8Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4