ANALOGICTECH AAT8515

AAT8515
20V P-Channel Power MOSFET
General Description
Features
The AAT8515 is a low threshold P-channel MOSFET
designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-high-density MOSFET process and space-saving, small-outline, J-lead
package, performance superior to that normally
found in a TSOP-6 footprint has been squeezed into
the footprint of an SC70JW-8 package.
•
•
SC70JW-8 Package
Applications
•
•
•
•
Drain-Source Voltage (max): -20V
Continuous Drain Current1 (max):
-5.4A @ 25°C
Low On-Resistance:
— 35mΩ @ VGS = -4.5V
— 60mΩ @ VGS = -2.5V
Top View
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
D
D
D
D
8
7
6
5
Absolute Maximum Ratings
1
2
3
4
TA = 25°C, unless otherwise noted.
S
S
S
G
Symbol
VDS
VGS
ID
IDM
IS
TJ
TSTG
Description
Value
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ = 150°C1
TA = 25°C
TA = 70°C
Pulsed Drain Current2
Continuous Source Current (Source-Drain Diode)1
Operating Junction Temperature Range
Storage Temperature Range
Units
-20
±12
±5.4
±4.3
±32
-1.5
-55 to 150
-55 to 150
°C
°C
V
A
Thermal Characteristics1
Symbol
RθJA
RθJA2
RθJF
PD
Description
Typ
Max
Units
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
100
61
33
120
73.5
40
1.7
1.0
°C/W
°C/W
°C/W
Maximum Power Dissipation
TA = 25°C
TA = 70°C
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
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AAT8515
20V P-Channel Power MOSFET
Electrical Characteristics
TJ = 25°C, unless otherwise noted.
Symbol Description
Conditions
Min
DC Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0V, ID = -250µA
-20
VGS = -4.5V, ID = -5.4A
VGS = -2.5V, ID = -4.1A
1
ID(ON)
On-State Drain Current
VGS = -4.5V, VDS = -5V (pulsed)
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = -250µA
IGSS
Gate-Body Leakage Current
VGS = ±12V, VDS = 0V
V = 0V, VDS = -20V
IDSS
Drain Source Leakage Current GS
VGS = 0V, VDS = -16V, TJ = 70°C2
1
gfs
Forward Transconductance
VDS = -5V, ID = -5.4A
Dynamic Characteristics2
QG
Total Gate Charge
VDS = -15V, RD = 2.3Ω, VGS = -4.5V
QGS
Gate-Source Charge
VDS = -15V, RD = 2.3Ω, VGS = -4.5V
QGD
Gate-Drain Charge
VDS = -15V, RD = 2.3Ω, VGS = -4.5V
tD(ON)
Turn-On Delay
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
tR
Turn-On Rise Time
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
tD(OFF)
Turn-Off Delay
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
tF
Turn-Off Fall Time
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
Source-Drain Diode Characteristics
VSD
Source-Drain Forward
VGS = 0, IS = -5.4A
Voltage1
IS
Continuous Diode Current3
RDS(ON)
Typ Max
V
27
46
Drain-Source On-Resistance1
Units
35
60
-32
-0.6
±100
-1
-5
12
mΩ
A
V
nA
µA
S
13.6
2.3
5.5
10
37
36
52
nC
ns
-1.4
V
-1.5
A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
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AAT8515
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Transfer Characteristics
Output Characteristics
32
5V
4.5V
32
4V
VD=VG
25°C
3.5V
24
125°C
-55°C
24
ID (A)
IDS (A)
3V
16
16
2.5V
2V
8
8
1.5V
0
0
0
0
1
2
3
1
2
4
On-Resistance vs. Drain Current
5
On-Resistance vs. Gate-to-Source Voltage
120
60
ID = 6.5A
VGS = 2.5 V
50
100
40
RDS(ON) (mΩ)
RDS(ON) (mΩ)
4
VGS (V)
VDS (V)
30
VGS = 4.5 V
20
80
60
40
20
10
0
0
0
2
4
6
8
10
0
12
1
2
4
5
Threshold Voltage
On-Resistance vs. Junction Temperature
0.5
1.4
VGS = 4.5V
ID = 6.5A
ID = 250µA
0.4
VGS(th) Variance (V)
1.3
3
VGS (V)
ID (A)
Normalized RDS(ON)
3
1.2
1.1
1.0
0.9
0.8
0.3
0.2
0.1
0
-0.1
-0.2
0.7
-0.3
-50
0.6
-50
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
TJ (°C)
TJ (°C)
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AAT8515
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Gate Charge
5
100
VD=15V
ID=6.5A
4
TJ = 150°C
10
3
IS (A)
VGS (V)
Source-Drain Diode Forward Voltage
2
TJ = 25°C
1
1
0
0
3
6
9
12
15
QG, Charge (nC)
0.1
0
0.2
0.4
0.6
0.8
1
1.2
VSD (V)
Capacitance
Capacitance (pF)
2000
1600
Ciss
1200
800
Coss
400
Crss
0
0
5
10
15
20
VDS (V)
4
8515.2005.04.1.0
AAT8515
20V P-Channel Power MOSFET
Ordering Information
Package
Marking1
Part Number (Tape and Reel)2
SC70JW-8
GTXYY
AAT8515IJS-T1
Package Information
SC70JW-8
2.20 ± 0.20
1.75 ± 0.10
0.50 BSC 0.50 BSC 0.50 BSC
0.225 ± 0.075
2.00 ± 0.20
0.100
7° ± 3°
0.45 ± 0.10
4° ± 4°
0.05 ± 0.05
0.15 ± 0.05
1.10 MAX
0.85 ± 0.15
0.048REF
2.10 ± 0.30
All dimensions in millimeters.
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
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AAT8515
20V P-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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