AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOD4110 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID =40A (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) UIS Tested! Rg,Ciss,Coss,Crss Tested TO-252 D-PAK D Top View Drain Connected to Tab G D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Maximum 30 Units V ±20 V G 40 TC=25°C Continuous Drain Current B TC=100°C Pulsed Drain Current Continuous Drain CurrentA G A 40 ID IDM C 180 TA=25°C 22 A 18 Avalanche Current C IDSM IAR 25 A Repetitive avalanche energy L=0.3mH C EAR 94 mJ TA=70°C TC=25°C Power Dissipation B Power Dissipation A PD TC=100°C TA=25°C Junction and Storage Temperature Range 6 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 4 TJ, TSTG t ≤ 10s Steady-State Steady-State W 31 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient D Maximum Junction-to-Case 63 RθJA RθJC Typ 15 41 2 °C Max 20 50 2.4 Units °C/W °C/W °C/W www.aosmd.com AOD4110 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Conditions Min ID=250uA, VGS=0V VDS=30V, VGS=0V 30 20 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 180 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous CurrentG IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Units V TJ=125°C Static Drain-Source On-Resistance Max 0.1 VGS(th) RDS(ON) Typ 0.1 µA 1.6 2 V 6 7.2 9.0 11.0 8.5 10.5 A 55 0.37 2154 VGS=0V, VDS=15V, f=1MHz VGS=10V, VDS=15V, ID=20A mΩ mΩ S 0.5 V 40 A 2650 pF 474 pF 185 VGS=0V, VDS=0V, f=1MHz mA pF 0.75 1.1 37 45 Ω 17.8 nC 6.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge 7.6 nC tD(on) Turn-On DelayTime 6.8 ns tr Turn-On Rise Time 7.2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=300A/µs 25.2 ns 5.8 ns 12 18 10.5 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t≤ 10s junction-to-ambient thermal resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0: Apr.2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4110 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 30 6V 150 7V 4.5V 120 20 4.0V 90 ID(A) ID (A) VDS=5V 25 10V 15 60 3.5V 10 30 VGS=3V 5 0 125°C 25°C 0 0 1 2 3 4 5 1 2 VDS (Volts) Figure 1: On-Region Characteristics 12 Normalized On-Resistance RDS(ON) (mΩ) 4 5 1.8 10 VGS=4.5V 8 VGS=10V 6 4 ID=20A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 13 ID=20A 1.0E+01 11 125°C 1.0E+00 9 125°C IS (A) RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 7 25°C 1.0E-02 1.0E-03 25°C 5 1.0E-01 1.0E-04 3 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD4110 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3600 Vds=15V ID=20A 3000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2400 1800 1200 2 Crss Coss 600 0 0 0 8 16 24 32 0 40 5 10 15 20 1000 30 100 10µs RDS(ON) limited 10ms 10 1ms DC 1 TJ(Max)=175°C TC=25°C 0.1 0.01 0.01 0.1 TJ(Max)=175°C TC=25°C 90 100µs Power (W) 100 ID (Amps) 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 80 70 60 1 VDS (Volts) 10 100 50 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK =TC+PD.ZθJC.RθJC RθJC=2.4°C/W Single Pulse PD Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4110 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 75 Power Dissipation (W) ID(A), Peak Avalanche Current 120 90 TA=25°C 60 TA=150°C 30 0 0.000001 60 45 30 15 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 T CASE (°C) Figure 13: Power De-rating (Note B) 50 100 40 80 30 Power (W) Current rating ID(A) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 20 10 TJ(Max)=150°C TA=25°C 60 40 20 0 0 25 50 75 100 125 150 0 175 1E-04 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note H) T CASE (°C) Figure 14: Current De-rating (Note B,G) 0.01 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK =TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 PD Ton T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com