AOSMD AOD4110

AOD4110
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
Features
The AOD4110 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AOD4110 is Pb-free (meets ROHS & Sony
259 specifications).
VDS (V) = 30V
ID =40A (VGS = 10V)
RDS(ON) < 7.2mΩ
(VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested
TO-252 D-PAK
D
Top View
Drain Connected to
Tab
G
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Maximum
30
Units
V
±20
V
G
40
TC=25°C
Continuous Drain
Current B
TC=100°C
Pulsed Drain Current
Continuous Drain
CurrentA
G
A
40
ID
IDM
C
180
TA=25°C
22
A
18
Avalanche Current C
IDSM
IAR
25
A
Repetitive avalanche energy L=0.3mH C
EAR
94
mJ
TA=70°C
TC=25°C
Power Dissipation
B
Power Dissipation
A
PD
TC=100°C
TA=25°C
Junction and Storage Temperature Range
6
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
4
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
31
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
D
Maximum Junction-to-Case
63
RθJA
RθJC
Typ
15
41
2
°C
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
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AOD4110
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Conditions
Min
ID=250uA, VGS=0V
VDS=30V, VGS=0V
30
20
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
180
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous CurrentG
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Units
V
TJ=125°C
Static Drain-Source On-Resistance
Max
0.1
VGS(th)
RDS(ON)
Typ
0.1
µA
1.6
2
V
6
7.2
9.0
11.0
8.5
10.5
A
55
0.37
2154
VGS=0V, VDS=15V, f=1MHz
VGS=10V, VDS=15V, ID=20A
mΩ
mΩ
S
0.5
V
40
A
2650
pF
474
pF
185
VGS=0V, VDS=0V, f=1MHz
mA
pF
0.75
1.1
37
45
Ω
17.8
nC
6.6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
7.6
nC
tD(on)
Turn-On DelayTime
6.8
ns
tr
Turn-On Rise Time
7.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=300A/µs
25.2
ns
5.8
ns
12
18
10.5
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t≤ 10s junction-to-ambient thermal
resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be
used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev0: Apr.2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
30
6V
150
7V
4.5V
120
20
4.0V
90
ID(A)
ID (A)
VDS=5V
25
10V
15
60
3.5V
10
30
VGS=3V
5
0
125°C
25°C
0
0
1
2
3
4
5
1
2
VDS (Volts)
Figure 1: On-Region Characteristics
12
Normalized On-Resistance
RDS(ON) (mΩ)
4
5
1.8
10
VGS=4.5V
8
VGS=10V
6
4
ID=20A
1.6
VGS=10V
1.4
VGS=4.5V
1.2
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
13
ID=20A
1.0E+01
11
125°C
1.0E+00
9
125°C
IS (A)
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics
7
25°C
1.0E-02
1.0E-03
25°C
5
1.0E-01
1.0E-04
3
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3600
Vds=15V
ID=20A
3000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2400
1800
1200
2
Crss
Coss
600
0
0
0
8
16
24
32
0
40
5
10
15
20
1000
30
100
10µs
RDS(ON)
limited
10ms
10
1ms
DC
1
TJ(Max)=175°C
TC=25°C
0.1
0.01
0.01
0.1
TJ(Max)=175°C
TC=25°C
90
100µs
Power (W)
100
ID (Amps)
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
70
60
1
VDS (Volts)
10
100
50
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=Ton/T
TJ,PK =TC+PD.ZθJC.RθJC
RθJC=2.4°C/W
Single Pulse
PD
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
75
Power Dissipation (W)
ID(A), Peak Avalanche Current
120
90
TA=25°C
60
TA=150°C
30
0
0.000001
60
45
30
15
0
0.00001
0.0001
0.001
0
25
50
75
100
125
150
175
T CASE (°C)
Figure 13: Power De-rating (Note B)
50
100
40
80
30
Power (W)
Current rating ID(A)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
20
10
TJ(Max)=150°C
TA=25°C
60
40
20
0
0
25
50
75
100
125
150
0
175
1E-04 0.001
0.1
1
10
100 1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-toAmbient (Note H)
T CASE (°C)
Figure 14: Current De-rating (Note B,G)
0.01
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=Ton/T
TJ,PK =TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
PD
Ton
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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