AOSMD AON3814

AON3814
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AON3814 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3814 is
Pb-free (meets ROHS & Sony 259 specifications).
VDS (V) = 20V
ID = 6A (VGS = 4.5V)
RDS(ON) < 17mΩ (VGS = 4.5V)
RDS(ON) < 18.5mΩ (VGS = 4V)
RDS(ON) < 24mΩ (VGS = 2.5V)
RDS(ON) < 39mΩ (VGS = 1.8V)
ESD Protected
DFN 3x3
Top View
D2
D1
Bottom View
S
D
S
D G1
D
D
S
G
G2
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current F
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±12
V
30
2.4
W
1.5
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
5.3
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
6
TA=25°C
Power Dissipation F
Maximum
20
RθJA
RθJL
Typ
43
75
36
Max
52
90
50
Units
°C/W
°C/W
°C/W
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AON3814
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250µA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
TJ=55°C
17
24
VGS=4V, ID=6A
11.5
15
18.5
VGS=2.5V, ID=6A
14.5
19
24
VGS=1.8V, ID=6A
23
30
39
VDS=5V, ID=6A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=6A
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=5V, VDS=10V, RL=1.7Ω,
RGEN=3Ω
µA
V
A
14
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Crss
1.1
19
VSD
Coss
0.71
11
Forward Transconductance
µA
V
15
TJ=125°C
IS
5
10
VGS=4.5V, ID=6A
gFS
Units
V
VDS=20V, VGS=0V
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
IDSS
RDS(ON)
Typ
25
0.75
mΩ
mΩ
mΩ
S
1
V
3.5
A
1315
pF
219
pF
183
2.1
pF
kΩ
13.1
nC
6.7
nC
4.6
1
nC
µs
2.8
µs
5.6
µs
5.9
µs
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F. The power dissipation and current rating is based on the t ≤ 10s thermal resistance, and current rating is also limited by wire-bonding.
Rev 2:Sep 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON3814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
10V
VDS=5V
VGS =2V
4V
15
3V
ID(A)
ID(A)
20
10
125°C
VGS =1.5V
10
5
0
25°C
0
0
1
2
3
4
5
0.0
0.5
VDS(Volts)
1.0
1.5
2.0
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
40
Normalize ON-Resistance
1.6
35
VGS =1.8V
30
RDS(ON)(mΩ)
-40°C
25
VGS =2.5V
20
15
VGS =4V
VGS =4.5V
10
5
0
5
10
15
VGS=2.5V
ID=6A
1.4
VGS=4V
VGS=4.5V
1.2
VGS=1.8V
1.0
0.8
20
-50
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
30
1E+01
ID=6A
1E+00
125°C
1E-01
IS(A)
RDS(ON)(mΩ)
25
125°C
20
-40°C
1E-02
1E-03
15
25°C
25°C
1E-04
1E-05
10
0
2
4
6
8
10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
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AON3814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
5
VDS=10V
2000
ID=6A
Capacitance (pF)
VGS(Volts)
4
3
2
1500
1000
1
500
0
0
0
5
10
15
Coss
Ciss
Crss
0
20
100.00
1ms
10ms
DC
TJ(Max)=150°C
TA=25°C
0.1s
1s
10s
0
0.001
1
10
100
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=52°C/W
0.01
0.1
1
100
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
0.01
0.00001
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
10
20
10
0.01
0.1
20
TJ(Max)=150°C
TA=25°C
30
100µs
Power (W)
ID (Amps)
10.00
0.10
15
40
10µs
RDS(ON)
limited
10
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1.00
5
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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