AOSMD AO8808

AO8808
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO8808 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V V GS(MAX) rating.
This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain
configuration. Standard Product AO8808 is Pb-free (meets
ROHS & Sony 259 specifications). AO8808L is a Green
Product ordering option. AO8808 and AO8808L are electrically
identical.
VDS (V) = 20V
ID = 8A (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 4.5V)
RDS(ON) < 20mΩ (VGS = 2.5V)
RDS(ON) < 28mΩ (VGS = 1.8V)
TSSOP-8
Top View
D1
S1
S1
G1
1
2
3
4
D1
8
7
6
5
D2
D2
S2
S2
G2
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Units
V
±12
V
30
1.4
W
1
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
6.3
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Maximum
20
8
TA=25°C
Power Dissipation A
S2
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
°C/W
°C/W
°C/W
AO8808
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
10
TJ=55°C
25
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, V DS=5V
30
100
nA
1
V
10.6
14
14.2
17
VGS=4.5V, I D=5A
12.2
15
mΩ
VGS=2.5V, I D=4A
16.1
20
mΩ
VGS=1.8V, I D=3A
23.2
28
mΩ
TJ=125°C
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=5V, ID=8A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qrr
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, V DS=10V, I D=8A
Gate Drain Charge
tD(on)
VGS=10V, VDS=10V, RL=1.3Ω,
RGEN=3Ω
A
36
0.73
1
V
2.4
A
1810
pF
232
pF
200
pF
1.6
Ω
19.8
nC
1.8
nC
5
nC
3.3
ns
5.9
ns
44
ns
7.7
ns
IF=8A, dI/dt=100A/µs
22
IF=8A, dI/dt=100A/µs
9.8
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Alpha & Omega Semiconductor, Ltd.
mΩ
S
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev3: August 2005
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
µA
0.75
VGS=10V, I D=8A
IS
Units
V
VDS=16V, VGS=0V
IGSS
Static Drain-Source On-Resistance
Max
20
VGS(th)
RDS(ON)
Typ
AO8808
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10
35
30
2.5V
4.5V
VDS=5V
2V
25
30
20
ID(A)
ID (A)
25
20
15
15
10
125°C
10
VGS=1.5V
5
5
0
25°C
0
0
1
2
3
4
5
0
0.5
1
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
30
1.6
VGS=4.5V
ID=5A
Normalized On-Resistance
VGS=1.8V
25
RDS(ON) (mΩ)
2.5
20
VGS=2.5V
VGS=4.5V
15
10
VGS=10V
VGS=2.5V
1.4
VGS=10V
1.2
VGS=1.8V
1
5
0
5
10
15
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
1.0E+01
35
1.0E+00
125°
ID=5A
30
1.0E-01
25
20
IS (A)
RDS(ON) (mΩ)
25
125°C
15
1.0E-02
25°C
1.0E-03
10
25°C
1.0E-04
5
1.0E-05
0
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO8808
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
VDS=10V
ID=8A
2500
Capacitance (pF)
VGS (Volts)
4
3
2
1
Ciss
2000
1500
1000
Coss
500
0
Crss
0
0
4
8
12
16
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
RDS(ON)
limited
100µs
1s 0 1
TJ(Max)=150°C
TA=25°C
DC
1
20
10
10s
0.1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
20
30
1m
1.0
0.1
15
TJ(Max)=150°C
TA=25°C
10µs
Power (W)
ID (Amps)
40
10m
ZθJA Normalized Transient
Thermal Resistance
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
5
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to
Ambient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000