AP60L02GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 25V RDS(ON) 12mΩ ID G 50A S Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02GJ) is available for low-profile applications. G G D D S TO-252(H) S TO-251(J) Rating Units Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 50 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 32 A 1 IDM Pulsed Drain Current 180 A PD@TC=25℃ Total Power Dissipation 62.5 W Linear Derating Factor 0.5 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-case Thermal Resistance Junction-case Max. 2.0 ℃/W Rthj-amb Thermal Resistance Junction-ambient Max. 110 ℃/W Data & specifications subject to change without notice 200227032 AP60L02GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 25 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=25A - - 12 mΩ VGS=4.5V, ID=20A - - 26 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=25A - 30 - S VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150 C) VDS=20V, VGS=0V - - 25 uA Gate-Source Leakage VGS= ± 20V - - ±100 nA ID=25A - 21 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance VGS=0V, ID=250uA o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 2.8 nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 16 nC VDS=15V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=20A - 75 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns tf Fall Time RD=0.75Ω - 20 - ns Ciss Input Capacitance VGS=0V - 605 - pF Coss Output Capacitance VDS=25V - 415 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 195 - pF Min. Typ. - - 50 A - - 180 A - - 1.26 V Min. Typ. Source-Drain Diode Symbol IS Parameter Test Conditions VD=VG=0V , VS=1.26V Continuous Source Current ( Body Diode ) ISM Pulsed Source Current ( Body Diode ) 2 Forward On Voltage VSD 1 Tj=25℃, IS=50A, VGS=0V Max. Units Drain-Source Avalanche Ratings Symbol Parameter Test Conditions 2 Max. Units EAS Single Pulse Avalanche Energy VDD=25V, ID=35A, L=100uH - - 61 mJ IAR Avalanche Current VGS=10V - - 35 A Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP60L02GH/J 200 150 V G =10V o T C =25 C T C =150 o C V G =10V V G =8.0V V G =8.0V ID , Drain Current (A) ID , Drain Current (A) 150 V G =6.0V 100 100 V G =6.0V 50 50 V G =4.0V V G =4.0V 0 0 0 1 2 3 4 5 6 7 0 8 1 V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 26 1.8 I D =25A T c =25 ℃ 24 I D =25A V G =10V 1.6 22 Normalized R DS(ON) RDS(ON) (mΩ ) 20 18 16 14 1.4 1.2 1 12 0.8 10 0.6 8 2 3 4 5 6 7 8 9 10 V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 11 -50 0 50 100 o T j , Junction Temperature ( C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP60L02GH/J 60 70 60 50 50 ID , Drain Current (A) 40 PD (W) 40 30 30 20 20 10 10 0 0 25 50 75 100 125 0 150 50 100 150 T c ,Case Temperature ( o C) o T c , Case Temperature ( C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 1000 100 Normalized Thermal Response (R thjc) DUTY=0.5 ID (A) 10us 100us 10 1ms 10ms T c =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE PDM t 0.01 T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 100ms 1 0.01 1 10 V DS (V) Fig 7. Maximum Safe Operating Area 100 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP60L02GH/J f=1.0MHz 10000 16 I D =25A V DS =12V V DS =16V V DS =20V 12 10 C (pF) VGS , Gate to Source Voltage (V) 14 8 1000 Ciss 6 Coss 4 Crss 2 0 0 10 20 30 40 50 100 1 6 11 16 21 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 T j =150 o C 10 2 VGS(th) (V) IS(A) T j =25 o C 1 1 0.1 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 T j , Junction Temperature( o C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP60L02GH/J VDS 90% RD VDS D RG TO THE OSCILLOSCOPE 0.6x RATED VDS G + 10% VGS S 10 V VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS 5V 0.8 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q