TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Silicon Phototransistor TEMT1000 Description TEMT1020 TEMT1000 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only. TEMT1030 Features TEMT1040 • High photo sensitivity • Fast response times • Angle of half sensitivity ϕ = ± 15° • Daylight filter matched to IR Emitters (λ = 870 nm to 950 nm) • Versatile terminal configurations • Matched IR Emitter series: TSML1000 • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 16757 Applications Detector in electronic control and drive circuits IR Detector for Daylight application Photo interrupters Counter Encoder Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit VECO 5 V Emitter Collector Voltage Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Total Power Dissipation Tamb ≤ 55 °C Ptot 100 mW Tj 100 °C Tstg - 40 to + 100 °C Tamb - 40 to + 85 °C Tsd < 260 °C RthJA 400 K/W Junction Temperature Storage Temperature Range Operating Temperature Range Soldering Temperature t≤5s Thermal Resistance Junction/ Ambient Basic Characteristics Tamb = 25 °C, unless otherwise specified Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min VCEO 70 Typ. Max Unit Collector Emitter Voltage IC = 1 mA Collector-emitter dark current VCE = 20 V, E = 0 ICEO 1 Collector-emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF Angle of Half Sensitivity ϕ ±15 deg Wavelength of Peak Sensitivity λp 950 nm Document Number 81554 Rev. 1.5, 08-Mar-05 V 200 nA www.vishay.com 1 TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Parameter Test condition Symbol Min Typ. λ0.5 Range of Spectral Bandwidth Max 750 to 980 Unit nm VCEsat Collector Emitter Saturation Voltage Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA Turn-On Time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 2.0 µs Turn-Off Time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 2.3 µs Cut-Off Frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 180 kHz Collector Light Current Ee = 1 mW/cm2, λ = 950 nm, VCE = 5V Ica 7.0 mA 0.3 2 V I CEO - Collector Dark Current ( nA ) 10 4 10 3 V CE = 20 V 10 2 10 1 10 0 20 40 60 80 100 Tamb - Ambient Temperature ( ° C ) 94 8304 1.8 V CE = 5 V E e = 1 mW/cm 2 λ = 950 nm 1.4 1.2 1.0 0.8 0.6 94 8239 20 40 60 80 Figure 2. Relative Collector Current vs. Ambient Temperature 2 6 4 2 0 0.1 1 100 10 VCE - Collector Emitter Voltage ( V ) Figure 3. Collector Emitter Capacitance vs. Collector Emitter Voltage 100 Tamb - Ambient Temperature ( ° C ) www.vishay.com f = 1 MHz 8 t on / t off - Turn on / Turn off Time ( µ s ) I ca rel - Relative Collector Current 2.0 0 10 94 8294 Figure 1. Collector Dark Current vs. Ambient Temperature 1.6 C CEO - Collector Emitter Capacitance ( pF ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 8 V CE = 5 V R L = 100 Ω λ = 950 nm 6 4 t off 2 t on 0 0 94 8293 2 4 6 8 10 12 14 I C - Collector Current ( mA ) Figure 4. Turn On/Turn Off Time vs. Collector Current Document Number 81554 Rev. 1.5, 08-Mar-05 TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors 0° 10° 20 ° Srel - Relative Sensitivity 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8248 Figure 5. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81554 Rev. 1.5, 08-Mar-05 www.vishay.com 3 TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Package Dimensions in mm TEMT1000 16104 Package Dimensions in mm TEMT1020 16105 www.vishay.com 4 Document Number 81554 Rev. 1.5, 08-Mar-05 TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Package Dimensions in mm TEMT1030 16756 Package Dimensions in mm TEMT1040 16500 Document Number 81554 Rev. 1.5, 08-Mar-05 www.vishay.com 5 TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Reel Dimensions 18033 www.vishay.com 6 Document Number 81554 Rev. 1.5, 08-Mar-05 TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Taping TEMT1000 18089 Taping TEMT1020 18090 Document Number 81554 Rev. 1.5, 08-Mar-05 www.vishay.com 7 TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Taping TEMT1030 18091 1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5 °C to 35 °C, R.H. 60 % 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5 °C to 35 °C, R.H. 60 %, devices should be treated at 60°C ± 5°C for 15 hrs. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3 www.vishay.com 8 Reflow Solder Profile 260 240 220 Temperature ( ° C ) Precautions For Use 200 + 5 °C/s - 5 °C/s 180 160 140 120 60 s to 120 s 5s 100 80 60 0 17172 20 40 60 80 100 120 140 160 180 200 220 Time ( s ) Document Number 81554 Rev. 1.5, 08-Mar-05 TEMT1000 / 1020 / 1030 / 1040 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81554 Rev. 1.5, 08-Mar-05 www.vishay.com 9