TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in SMD Package Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology (DH) molded in clear SMD package with dome lens. DH chip technology represents best performance for speed, radiant power, forward voltage and longterm reliability. TSMF1020 TSMF1030 TSMF1040 Features • High speed • Extra high radiant power • Low forward voltage • • • • • • 16758 Applications Suitable for high pulse current operation Angle of half intensity ϕ = ± 17° Peak wavelength λp = 870 nm Longterm reliability Matched with PIN Photodiode TEMD1000 Versatile terminal configurations IrDA compatible data transmission Miniature light barrier For control and drive circuits Photointerrupters Incremental sensors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse Voltage Parameter Test condition VR 5 Unit V Forward Current IF 100 mA mA Peak Forward Current tp/T = 0.5, tp = 100 µs IFM 200 Surge Forward Current tp = 100 µs IFSM 0.8 A PV 190 mW Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range t ≤ 5sec Soldering Temperature Thermal Resistance Junction/Ambient Tj 100 °C Tamb - 40 to + 85 °C Tstg - 40 to + 100 °C Tsd <260 °C RthJA 400 K/W Basic Characteristics Tamb = 25 °C, unless otherwise specified Tamb = 25 °C, unless otherwise specified Parameter Forward Voltage Test condition IF = 20 mA IF = 1 A, tp = 100 µs Symbol VF Max Unit 1.3 1.5 V VF 2.4 V - 1.7 mV/K IF = 1.0mA Reverse Current VR = 5 V IR Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Rev. 6, 21-May-03 Typ. TKVF Temp. Coefficient of VF Document Number 81061 Min 10 160 µA pF www.vishay.com 1 TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors Parameter Radiant Intensity Test condition IF = 20 mA Symbol Min Typ. Ie 2.5 5 Max mW/sr Unit IF = 100 mA, tp = 100 µs Ie 25 mW/sr Radiant Power IF = 100 mA, tp = 20 ms φe 35 mW Temp. Coefficient of φe IF = 20 mA TKφe - 0.6 %/K ϕ ± 17 deg Angle of Half Intensity Peak Wavelength IF = 20 mA λp 870 nm Spectral Bandwidth IF = 20 mA ∆λ 40 nm Temp. Coefficient of λp IF = 20 mA TKλp 0.2 nm/K Rise Time IF = 20 mA tr 30 ns Fall Time IF = 20 mA tf 30 ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 I F - Forward Current ( mA ) 200 PV - Power Dissipation ( mW ) 180 160 140 120 100 80 60 40 Tamb < 60°C t p /T = 0.005 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 20 0 0 T amb - Ambient Temperature ( ° C ) 16187 1 0.01 10 20 30 40 50 60 70 80 90 100 Figure 1. Power Dissipation vs. Ambient Temperature 0.1 1 100 10 t p - Pulse Length ( ms ) 95 9985 Figure 3. Pulse Forward Current vs. Pulse Duration 10 4 100 80 60 40 20 0 16188 I F - Forward Current ( mA) I F - Forward Current ( mA ) 120 10 2 10 1 10 0 0 10 20 30 40 50 T amb - Ambient Temperature ( ° C ) www.vishay.com 0 60 70 80 90 100 Figure 2. Forward Current vs. Ambient Temperature 2 10 3 94 8880 1 2 3 4 V F - Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage Document Number 81061 Rev. 6, 21-May-03 TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors 1.6 V Frel - Relative Forward Voltage 1.2 1.1 1.2 I e rel , Φ e rel I F = 10 mA 1.0 0.9 0.8 0.4 0.8 0 -10 0 10 0.7 0 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) 94 7990 e 50 Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature 1.25 Φˇ e rel - Relative Radiant Power 1000 100 10 1 0.1 10 0 16189 10 1 10 2 10 3 I F - Forward Current ( mA ) 1.0 0.75 0.5 0.25 I F = 100 mA 0 820 10 4 Figure 9. Relative Radiant Power vs. Wavelength 0° Srel - Relative Sensitivity 1000 100 10 1 920 870 λ - Wavelength ( nm ) 15821 Figure 6. Radiant Intensity vs. Forward Current Φe - Radiant Power ( mW ) 140 100 T amb - Ambient Temperature ( ° C ) 94 7993 e Figure 5. Relative Forward Voltage vs. Ambient Temperature I e - Radiant Intensity ( mW/sr ) I F = 20 mA 10° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 0.1 10 0 94 8007 10 1 10 2 10 3 I F - Forward Current ( mA ) Document Number 81061 Rev. 6, 21-May-03 0.6 10 4 Figure 7. Radiant Power vs. Forward Current 80° 0.4 0.2 0 0.2 0.4 0.6 94 8248 Figure 10. Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com 3 TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors Package Dimensions in mm TSMF1000 16159 Package Dimensions in mm TSMF1020 16160 www.vishay.com 4 Document Number 81061 Rev. 6, 21-May-03 VISHAY TSMF1000/1020/1030/1040 Vishay Semiconductors Package Dimensions in mm TSMF1030 16228 Package Dimensions in mm TSMF1040 16760 Document Number 81061 Rev. 6, 21-May-03 www.vishay.com 5 TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors Reel Dimensions 18033 www.vishay.com 6 Document Number 81061 Rev. 6, 21-May-03 VISHAY TSMF1000/1020/1030/1040 Vishay Semiconductors Taping TSMF1000 18030 Taping TSMF1020 18031 Document Number 81061 Rev. 6, 21-May-03 www.vishay.com 7 TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors Taping TSMF1030 18032 1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5°C to 35°C, R.H. 60% 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5°C to 35°C, R.H. 60%, devices should be treated at 60°C ± 5°C for 15 hrs. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3 www.vishay.com 8 Reflow Solder Profile 260 240 220 Temperature ( q C ) Precautions For Use 200 + 5 qC/s – 5 qC/s 180 160 140 120 60 s to 120 s 5s 100 80 60 0 17172 20 40 60 80 100 120 140 160 180 200 220 Time ( s ) Document Number 81061 Rev. 6, 21-May-03 TSMF1000/1020/1030/1040 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81061 Rev. 6, 21-May-03 www.vishay.com 9