TBN6501U Semiconductor Si NPN Transistor Unit in mm SOT-323 □ Applications 2.1±0.1 1.25±0.05 - Broadband amplifier application under 1GHz 3 0.30±0.1 □ Features 1 1.30±0.1 2.0±0.2 - SAW filter driver in TV tuners 2 - Gain bandwidth product 0.15±0.05 fT = 1.1 GHz at VCE = 3 V, IC = 20 mA fT = 1.5 GHz at VCE = 5 V, IC = 30 mA 0.90±0.1 |S21|2 = 3.0 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz - Noise figure NF = 1.8 dB at VCE = 3 V, IC = 10 mA, f = 1 GHz 0~0.1 - Power gain 0.1 Min. Pin Configuration 1. Base 2. Emitter 3. Collector □ Absolute Maximum Ratings (TA = 25 ℃) Symbol Ratings Unit Collector to Base Voltage BVCBO 20 V Collector to Emitter Voltage BVCEO 8 V Emitter to Base Voltage BVEBO 3 V Collector Current IC 100 mA Total Power Dissipation Ptot 200 mW Operating Junction Temperature Tj 150 ℃ Tstg -65 ~ 150 ℃ Parameter Storage Temperature Caution : Electro Static Discharge sensitive device 1 TBN6501U □ Electrical Characteristics (TA = 25 ℃) Parameter Symbol Test Conditions Min. Typ. Max. Unit ICBO VCB = 15 V, IE = 0 mA - - 0.5 ㎂ ICEO VCE = 8 V, IB = 0 mA - - 10 ㎂ Emitter Cut-off Current IEBO VEB = 2 V, IC = 0 mA - - 0.5 ㎂ DC Current Gain hFE VCE = 3 V, IC = 10 mA 50 - 250 fT VCE = 3 V, IC = 20 mA 0.9 1.1 - GHz VCE = 5 V, IC = 30 mA 1.3 1.5 - GHz VCE = 3 V, IC = 20 mA, f = 1 GHz - 3.0 - dB VCE = 5 V, IC = 30 mA, f = 1 GHz - 4.0 - dB 1.8 - Collector Cut-off Current Gain Bandwidth Product Insertion Power Gain |S21|2 Noise Figure NF VCE = 3 V, IC = 10 mA, f = 1 GHz - Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz - 2.0 - pF □ hFE Classification Marking SD2 SD1 hFE Value 80 - 160 125 - 250 2 TBN6501U □ Typical Characteristics ( TA = 25 ℃, unless otherwise specified) Reverse Transfer Capacitance vs. Collector to Base Voltage Power Dissipation vs. Ambient Temperature 3.0 Reverse Transfer Capacitance, Cre (pF) Power Dissipation, PC (mW) 300 250 200 150 100 50 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 0 25 50 75 100 125 0 150 o DC Current Gain vs. Collector Current 2 3 4 5 6 7 Collector Current vs. Base to Emitter Voltage 30 300 VCE = 3 V 25 Collector Current, IC [mA] 250 200 150 100 VCE = 3 V 20 15 10 5 50 0 0.1 1 Collector to Base Voltage, VCB (V) Ambient Temperature, TA ( C) DC Current Gain, hFE f = 1 MHz 1 10 Collector Current, IC (mA) 100 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage, VBE [V] 3 TBN6501U Gain Bandwidth Product vs. Collector Current Collector Current vs. Collector to Emitter Voltage 3.0 50 IB Step = 50 µA Gain Bandwidth Product, fT (GHz) Collector Current, IC (mA) 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 2.0 1.5 1.0 0.5 0.0 6 10 Collector to Emitter Voltage, VCE (V) 30 40 50 60 Maximum Available Gain vs. Collector Current 9 Maximum Available Gain, MAG (dB) 6 VCE = 3 V VCE = 5 V f = 1 GHz 2 Insertion Power Gain, |S21| (dB) 20 Collector Current, IC (mA) Insertion Power Gain vs. Collector Current 5 V CE = 3 V V CE = 5 V 2.5 4 3 2 1 0 10 100 Collector Current, IC (mA) 8 7 VCE = 3 V VCE = 5 V f = 1 GHz 6 5 4 3 2 1 0 10 100 Collector Current, IC (mA) 4