@vic AV1015 TO-92 Plastic-Encapsulate Transistors AV1015 TRANSISTOR（ PNP ） TO—92 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 3.BASE 1 2 3 unless Test otherwise specified） conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 μA， IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0. 1 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μA， IC=0 -5 V mA， IB=0 Collector cut-off current ICBO VCB= -50 V IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5 V， IC=0 -0.1 μA DC current gain hFE（1） VCE= -6 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB= -10 mA -0.3 V Base-emitter saturation voltage VBE(sat) IC= -100 -10m A -1.1 V V, IC= -2mA mA, 70 I B= 400 VCE= -10 V, IC= -1 mA Transition frequency 80 fT MHz f =30MHz CLASSIFICATION OF hFE(1) Rank O Y GR Range 70-140 120-240 200-400 Copyright @vic Electronics Corp. 1 Website http://www.avictek.com @vic Copyright @vic Electronics Corp. AV1015 2 Website http://www.avictek.com @vic AV1015 TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 Copyright @vic Electronics Corp. 0.380 3 0.063 0.000 0.015 Website http://www.avictek.com