CEL NE687M13-T3-A

NEC's NPN SILICON TRANSISTOR NE687M13
OUTLINE DIMENSIONS (Units in mm)
FEATURES
PACKAGE OUTLINE M13
1
0.3
3
0.1
0.125+0.1
ñ0.05
0.1
0.5±0.05
NEC's NE687M13 transistor is designed for low noise, high
gain, and low cost requirements. This high fT part is well suited
for very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M13" package is ideal for today's
portable wireless applications.
(Bottom View)
0.5+0.1
ñ0.05
0.2+0.1
ñ0.05
2
0.15+0.1
ñ0.05
DESCRIPTION
0.35
LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
0.7
•
1.0+0.1
ñ0.05
HIGH GAIN BANDWIDTH PRODUCT:
fT = 14 GHz
0.7±0.05
W2
•
0.15+0.1
ñ0.05
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
0.35
•
0.2
0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
NE687M13
2SC5618
M13
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
GHz
GHz
9.0
7.0
14.0
12.0
fT
Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
NF
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz, Zs = Zopt
VCE = 1 V, IC = 3 mA, f = 2 GHz, Zs = Zopt
dB
dB
|S21E|2
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
dB
1.4
1.5
8.5
6.0
MAX
2.0
2.0
10.0
9.0
hFE
Forward Current Gain at VCE = 2 V, IC = 20 mA, Note 2
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
0.1
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
0.1
CRE
Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz,
70
Note 3
pF
130
0.4
0.8
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal of the bridge.
California Eastern Laboratories
NE687M13
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
ORDERING INFORMATION
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
5.0
PART NUMBER
NE687M13-A
VCEO
Collector to Emitter Voltage
V
3.0
NE687M13-T3-A
VEBO
Emitter to Base Voltage
V
2.0
mA
30
Collector Current
IC
Dissipation2
PT
Total Power
mW
90
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
QUANTITY
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance, Cre (pF)
Total Power Dissipation, Ptot (mW)
300
Mounted on Glass Epoxy PCB
2
(1.08 cm × 1.0 mm (t) )
250
200
150
100
90
50
0
25
50
75
100
125
150
0.5
0.4
0.3
0.2
0.1
1
2
3
4
Ambient Temperature, TA (°C)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current, IC (mA)
10
1
0.1
0.01
0.001
30
500 µ A
IB : 50 µ A step
400 µ A
300 µ A
25
20
200 µ A
15
100 µ A
10
5
0.5
5
35
VCE = 2 V
Collector Current, IC (mA)
f = 1 MHz
0
100
0.0001
0.4
0.6
0.6
0.7
0.8
0.9
Base to Emmiter Voltage, VBE (V)
1.0
0
IB = 50 µ A
1
2
3
Collector to Emmiter Voltage, VCE (V)
4
NE687M13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1000
16
VCE = 2 V
f = 2 GHz
Gain Bandwidth Product, fT (GHz)
100
10
0.1
10
12
10
8
6
4
2
1
100
10
Collector Current, IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 1 V
IC = 10 mA
30
25
MSG
MAG
20
15
10
2
|S21e|
5
0
0.1
1
VCE = 2 V
IC = 10 mA
30
MSG
25
MAG
20
15
10
2
|S21e|
5
0
0.1
10
1
Frequency, f (GHz)
MSG
20
MAG
2
15
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
20
10
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
100
Collector Current, IC (mA)
35
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
14
0
1
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
DC Current Gain, HFE
VCE = 2 V
|S21e|
10
5
VCE = 2 V
f = 1 GHz
VCE = 2 V
f = 2 GHz
15
MSG
MAG
10
2
|S21e|
5
0
0
1
10
Collector Current, IC (mA)
100
1
10
Collector Current, IC (mA)
100
NE687M13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
20
20
VCE = 2 V
f = 1 GHz
3
12
2
8
NF
4
1
10
16
3
12
8
2
NF
4
0
1
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
20
5
20
VCE = 1 V
f = 1.5 GHz
8
2
NF
4
1
0
0
100
10
3
12
2
8
NF
4
1
10
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
20
5
20
VCE = 2 V
f = 2 GHz
16
3
12
Ga
8
2
NF
4
1
0
1
10
Collector Current, IC (mA)
0
100
16
4
Noise Figure, NF (dB)
4
Associated Gain, Ga (dB)
VCE = 1 V
f = 2 GHz
Noise Figure, NF (dB)
0
100
0
1
Associated Gain, Ga (dB)
12
Ga
12
3
Ga
8
2
NF
4
1
0
1
10
Collector Current, IC (mA)
0
100
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
Ga
3
16
4
Noise Figure, NF (dB)
16
Associated Gain, Ga (dB)
VCE = 2 V
f = 1.5 GHz
4
1
0
100
10
Collector Current, IC (mA)
5
Ga
4
1
0
100
0
1
Noise Figure, NF (dB)
Noise Figure, NF (dB)
16
Ga
4
Associated Gain, Ga (dB)
VCE = 1 V
f = 1 GHz
Associated Gain, Ga (dB)
5
NE687M13
TYPICAL SCATTERING PARAMETERS
j50
+90º
j100
j25
+45º
+135º
j10
0
S11
10
50
25
S21
100
S12
5 10 15 20 25 +0º
+180º
S22
-j10
-45º
-135º
Coordinates in Ohms
Frequency in GHz
VCE = 1 V, IC = 10 mA
-j100
-j25
-j50
NE687M13
VCE = 1 V, IC = 10 mA
Frequency
GHz
S11
MAG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.200
1.400
1.600
1.800
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
0.71
0.64
0.57
0.53
0.49
0.45
0.44
0.44
0.43
0.43
0.42
0.42
0.42
0.42
0.41
0.40
0.40
0.39
0.40
0.39
0.38
0.36
0.34
S21
-90º
S12
ANG
MAG
ANG
-28.83
-56.70
-77.87
-94.58
-107.39
-120.85
-129.42
-135.99
-141.83
-146.64
-153.87
-160.59
-165.22
-169.18
-172.49
179.29
171.08
161.33
152.78
146.02
141.59
138.25
134.43
21.86
19.01
16.05
13.57
11.62
9.91
8.73
7.80
7.02
6.38
5.40
4.69
4.14
3.71
3.37
2.76
2.35
2.05
1.83
1.66
1.53
1.44
1.36
158.87
141.86
129.44
120.29
113.50
108.06
103.77
100.31
97.30
94.61
90.05
86.18
82.82
79.73
76.86
70.23
64.05
58.49
53.56
49.23
45.35
41.63
37.72
MAG
0.02
0.04
0.05
0.06
0.06
0.07
0.07
0.08
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.16
0.19
0.21
0.24
0.26
0.29
0.31
0.34
S22
K
ANG
MAG
ANG
76.89
64.05
57.48
54.28
52.33
51.39
51.70
52.15
52.52
53.11
54.26
55.29
56.05
56.51
56.83
56.91
55.87
54.71
53.37
52.04
50.81
49.38
47.54
0.86
0.75
0.63
0.54
0.47
0.37
0.33
0.30
0.28
0.26
0.23
0.21
0.19
0.18
0.17
0.16
0.17
0.18
0.20
0.22
0.23
0.23
0.23
-22.59
-40.78
-54.59
-64.96
-72.99
-78.86
-85.54
-90.17
-94.31
-99.34
-106.29
-113.29
-118.74
-123.68
-128.17
-136.91
-143.47
-147.06
-147.25
-144.73
-140.61
-135.48
-133.06
MAG1
(dB)
0.19
0.28
0.37
0.46
0.54
0.68
0.74
0.79
0.83
0.88
0.94
0.99
1.03
1.06
1.08
1.12
1.14
1.16
1.16
1.16
1.15
1.14
1.13
29.94
27.02
25.16
23.79
22.68
21.71
20.83
20.04
19.34
18.67
17.49
16.45
14.43
13.15
12.13
10.14
8.61
7.38
6.41
5.60
4.94
4.40
3.90
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE687M13
TYPICAL SCATTERING PARAMETERS
j50
+90º
j100
j25
+45º
+135º
j10
S11
0
10
S12
50
25
100
+180º S21
5
15 +0º
10
S22
-j10
Coordinates in Ohms
Frequency in GHz
VCE = 2 V, IC = 5 mA
-j100
-j25
-j50
NE687M13
VCE = 2 V, IC = 5 mA
Frequency
GHz
S11
MAG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.200
1.400
1.600
1.800
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
0.86
0.81
0.76
0.70
0.65
0.58
0.54
0.52
0.49
0.48
0.45
0.43
0.41
0.40
0.39
0.37
0.36
0.35
0.34
0.34
0.34
0.32
0.30
S21
-45º
-135º
-90º
S12
ANG
MAG
ANG
-14.28
-31.85
-46.05
-59.23
-70.68
-82.92
-91.97
-99.97
-107.10
-113.24
-123.52
-132.69
-139.56
-145.30
-150.12
-161.26
-171.52
176.69
166.32
158.42
153.42
150.03
146.33
13.53
12.83
11.91
10.91
9.95
8.87
8.07
7.39
6.76
6.24
5.38
4.72
4.20
3.78
3.45
2.84
2.42
2.12
1.88
1.70
1.56
1.46
1.38
167.49
155.13
144.78
135.97
128.54
121.33
116.01
111.61
107.73
104.20
98.29
93.40
89.17
85.45
82.00
74.35
67.39
61.12
55.53
50.63
46.37
42.49
38.57
MAG
0.02
0.04
0.05
0.06
0.07
0.08
0.08
0.09
0.09
0.10
0.11
0.11
0.12
0.13
0.14
0.16
0.18
0.20
0.22
0.23
0.25
0.27
0.30
S22
K
ANG
MAG
ANG
80.25
71.73
65.56
60.40
56.24
52.47
50.58
49.44
48.55
47.85
47.62
47.64
48.14
48.60
49.16
50.11
50.31
50.27
49.84
49.50
49.25
48.86
48.07
0.94
0.89
0.82
0.75
0.68
0.58
0.53
0.48
0.44
0.41
0.36
0.32
0.29
0.27
0.25
0.22
0.21
0.22
0.23
0.26
0.28
0.30
0.31
-11.88
-22.74
-32.21
-39.96
-46.33
-49.51
-54.17
-57.43
-59.80
-63.07
-66.56
-70.62
-73.13
-75.54
-77.78
-83.87
-91.33
-98.64
-104.18
-106.91
-106.70
-104.89
-104.37
MAG1
(dB)
0.14
0.17
0.22
0.28
0.34
0.47
0.52
0.57
0.62
0.66
0.75
0.82
0.88
0.94
0.98
1.07
1.12
1.15
1.17
1.18
1.17
1.16
1.15
28.47
25.34
23.61
22.37
21.38
20.54
19.81
19.16
18.56
18.02
17.05
16.19
15.41
14.70
14.05
11.05
9.30
7.96
6.92
6.08
5.40
4.85
4.35
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE687M13
TYPICAL SCATTERING PARAMETERS
j50
+90º
j100
j25
+45º
+135º
j10
S11
0
10
50
25
S21
100
S12
10 20
+180º
40 +0º
30
S22
-j10
-45º
-135º
Coordinates in Ohms
Frequency in GHz
VCE = 2 V, IC = 20 mA
-j100
-j25
-j50
NE687M13
VCE = 2 V, IC = 20 mA
Frequency
GHz
S11
MAG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.200
1.400
1.600
1.800
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
0.57
0.50
0.45
0.42
0.40
0.37
0.37
0.37
0.37
0.36
0.37
0.37
0.37
0.37
0.36
0.36
0.35
0.35
0.36
0.36
0.35
0.33
0.31
S21
-90º
S12
ANG
MAG
ANG
-36.15
-67.88
-90.13
-106.56
-118.50
-131.65
-139.21
-144.73
-149.66
-153.80
-159.66
-165.38
-169.31
-172.61
-175.37
177.29
169.69
160.03
151.53
144.75
140.37
137.20
133.76
31.49
25.71
20.68
16.96
14.25
12.07
10.55
9.37
8.41
7.62
6.43
5.56
4.90
4.39
3.98
3.24
2.75
2.39
2.12
1.92
1.76
1.65
1.55
154.52
135.92
123.67
115.24
109.26
104.60
100.88
97.86
95.24
92.90
88.88
85.48
82.45
79.67
77.07
70.97
65.26
60.01
55.28
51.05
47.24
43.56
39.78
MAG
0.01
0.03
0.03
0.04
0.05
0.05
0.06
0.06
0.07
0.07
0.08
0.09
0.10
0.11
0.13
0.15
0.18
0.21
0.23
0.25
0.28
0.30
0.33
S22
K
ANG
MAG
ANG
71.95
66.14
60.45
59.44
59.55
60.02
60.94
61.83
62.31
62.97
63.94
64.61
64.72
64.87
64.81
63.80
62.10
60.09
58.20
56.51
54.88
53.20
51.20
0.81
0.67
0.54
0.46
0.39
0.30
0.26
0.24
0.21
0.20
0.17
0.15
0.14
0.13
0.12
0.11
0.12
0.14
0.16
0.18
0.20
0.21
0.21
-25.05
-43.58
-56.22
-64.85
-71.22
-75.54
-81.03
-84.22
-87.05
-91.25
-96.57
-102.15
-106.18
-109.91
-113.45
-121.12
-128.22
-133.08
-134.34
-132.06
-127.09
-120.86
-117.44
MAG1
(dB)
0.34
0.42
0.54
0.64
0.71
0.84
0.89
0.92
0.95
0.98
1.02
1.05
1.07
1.08
1.09
1.11
1.12
1.12
1.12
1.12
1.11
1.10
1.09
33.26
29.76
27.77
26.19
24.88
23.77
22.75
21.84
21.02
20.26
18.15
16.47
15.17
14.10
13.16
11.27
9.76
8.53
7.54
6.71
6.03
5.48
4.95
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
06/13/2002
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.