CEL UPA861TD-T3-A

NEC's NPN SILICON
RF TWIN TRANSISTOR
FEATURES
OUTLINE DIMENSIONS
•
LOW VOLTAGE, LOW CURRENT OPERATION
•
LOW CAPACITANCE FOR WIDE TUNING RANGE
•
SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
0.8 +0.07
-0.05
C2
Q1
6
B1
5
2
E2
3
Q2
4
B2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0.125 +0.1
-0.05
NEC's UPA861TD contains one NE894 and one NE687 NPN
high frequency silicon bipolar chip. The NE894 is an excellent
oscillator chip, featuring high fT and low current, low voltage
operation. The NE687 is an excellent buffer transistor, featuring low noise and high gain. NEC's new ultra small TD package
is ideal for all portable wireless applications where reducing
board space is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
1
5
E1
IDEAL FOR >3 GHz OSCILLATORS
DESCRIPTION
C1
4
3
6
1
2
0.4
0.8
0.4
+0.07
-0.05
TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
0.15±0.05
(Top View)
LOW HEIGHT PROFILE:
Just 0.50 mm high
0.5±0.05
•
1.0±0.05
vX
•
(Units in mm)
Package Outline TD
(TOP VIEW)
1.2
•
UPA861TD
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
Q1
SYMBOLS
UNITS
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
hFE
DC Current Gain1 at VCE = 1 V, IC = 10 mA
fT
Cre
Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz
GHz
at VCB = 0.5 V, IE = 0, f = 1 MHz
pF
dB
NF
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
hFE
DC Current Gain1 at VCE = 1 V, IC = 5 mA
fT
Cre
|S21E|2E|2
NF
Feedback
Capacitance2
Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz
|S21E|2
Q2
PARAMETERS AND CONDITIONS
UPA861TD
TD
Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz
MIN
100
70
110
10.0
12.0
0.4
7.0
dB
Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, Zs = Zopt
dB
140
0.8
9.0
1.5
2.0
100
100
17.0
pF
Insertion Power GainIat VCE = 1 V, IC = 20 mA, f = 2 GHz
MAX
100
50
GHz
TYP
75
20.0
0.22
11.0
100
0.30
13.0
1.4
2.5
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories
UPA861TD
ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
Q1
Q2
9
VCBO
Collector to Base Voltage
V
5
VCEO
Collector to Emitter Voltage
V
3
3
VEBO
Emitter to Base Voltage
V
2
1.5
35
IC
Collector Current
mA
30
PT
Total Power Dissipation1
mW
90
105
195 Total
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
ORDERING INFORMATION
PART NUMBER
UPA861TD-T3-A
QUANTITY
10K Pcs./Reel
PACKAGING
Tape & Reel
150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB
TYPICAL CHARACTERISTICS
(TA = 25°C, unless otherwise specified)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation, Ptot (mW)
300
Mounted on Glass Epoxy PCB
(1.08 cm2 x 1.0mm (t))
250
200
2 Elements in total
195
150
105
Q2
100
90
Q1
50
0
25
50
75
100
125
150
Q1
Q2
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.5
Reverse Transfer Capacitance, Cre (pF)
Reverse Transfer Capacitance, Cre (pF)
Ambient Temperature, TA (ºC)
f = 1 MHz
0.4
0.3
0.2
0.1
0
1
2
3
4
Collector to Base Voltage, VCB (V)
5
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0
2
4
6
8
Collector to Base Voltage, VCB (V)
10
UPA861TD
TYPICAL CHARACTERISTICS, cont.
Q1
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
Collector Current, IC (mA)
Collector Current, IC (mA)
100
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4
1.0
0.7
0.9
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
1
0.1
0.01
1.0
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0.0001
0.4
1.0
Base to Emitter Voltage, VBE (V)
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
40
IB : 50 µA step
400 µA
500 µA 450 µA
Collector Current, IC (mA)
25
20
200 µA
15
100 µA
10
400 µA
350 µA
300 µA
5
30
300 µA
250 µA
20
200 µA
150 µA
100 µA
10
IB = 50 µA
IB = 50 µA
0
0.8
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0.001
Collector Current, IC (mA)
0.6
Base to Emitter Voltage, VBE (V)
10
30
0.5
Base to Emitter Voltage, VBE (V)
Collector Current, IC (mA)
Collector Current, IC (mA)
100
(TA = 25°C, unless otherwise specified)
1
2
3
Collector to Emitter Voltage, VCE (V)
4
0
1
2
3
Collector to Emitter Voltage, VCE (V)
4
UPA861TD
TYPICAL CHARACTERISTICS, cont.
(TA = 25°C, unless otherwise specified)
Q1
Q2
DC VOLTAGE vs.
COLLECTOR CURRENT
DC VOLTAGE vs.
COLLECTOR CURRENT
1 000
1 000
VCE = 1 V
Dc Current Gain, hFE
100
10
0.1
Gain Bandwidth Product, fΓ (GHz)
16
14
1
10
100
10
0.1
100
10
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
100
25
VCE = 1 V
f = 2 GHz
12
10
8
6
4
2
VCE = 1 V
f = 2 GHz
20
15
10
5
0
0
1
10
1
100
Collector Current, IC (mA)
VCE = 1 V
IC = 10 mA
30
25
MSG
MAG
20
15
10
|S21e|2
5
0
0.1
1
Frequency, f (GHz)
100
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
10
Collector Current, IC (mA)
10
Insertion Power Gain |S21e|2
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
1
Collector Current, IC (mA)
Gain Bandwidth Product, fΓ (GHz)
Dc Current Gain, hFE
VCE = 1 V
40
VCE = 1 V
IC = 20 mA
35
30
MSG
MAG
25
20
15
10
|S21e|2
5
0
0.1
1
Frequency, f (GHz)
10
UPA861TD
Q2
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
16
MSG
MAG
12
|S21e|2
8
4
1
10
100
12
|S21e|2
8
4
0
1
MAG
|S21e|2
2
10
VCE = 1 V
f = 4 GHz
16
12
MSG
|S21e|2
4
0
1
100
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 4 GHz
8
MAG
6
|S21e|2
4
2
Collector Current, IC (mA)
10
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
10
MAG
8
100
Insertion Power Gain |S21e|2
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2
Maximum Available Power Gain MAG (dB)
100
20
Collector Current, IC (mA)
1
10
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
6
0
MAG
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
8
1
16 MSG
VCE = 1 V
f = 2 GHz
Collector Current, IC (mA)
VCE = 1 V
f = 4 GHz
0
20
Collector Current, IC (mA)
10
4
Insertion Power Gain |S21e|2
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Q1
20
0
(TA = 25°C, unless otherwise specified)
Insertion Power Gain |S21e|2
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S21e|2
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
TYPICAL CHARACTERISTICS, cont.
100
10
VCE = 2 V
f = 4 GHz
8
6
MSG
4
|S21e|2
2
0
1
10
Collector Current, IC (mA)
100
UPA861TD
TYPICAL CHARACTERISTICS, cont.
Q1
Q2
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURENT
6
20
VCE = 1 V
f = 1 GHz
Ga
8
16
12
6
8
4
4
2
24
VCE = 1 V
f = 1 GHz
5
Noise Figure, NF (dB)
10
Noise Figure, NF (dB)
(TA = 25°C, unless otherwise specified)
Ga
20
4
16
3
12
2
8
NF
1
4
NF
0
1
0
0
100
10
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURENT
20
6
16
8
6
12
Ga
8
4
4
2
0
100
10
4
12
3
2
8
NF
4
0
1
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURENT
6
20
VCE = 2 V
f = 2 GHz
12
8
4
4
2
NF
1
10
Collector Current, IC (mA)
0
100
Noise Figure, NF (dB)
Noise Figure, NF (dB)
Ga
24
VCE = 2 V
f = 2 GHz
5
16
6
0
100
10
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURENT
8
16
Ga
Collector Current, IC (mA)
10
20
1
NF
1
24
VCE = 1 V
f = 2 GHz
5
Noise Figure, NF (dB)
Noise Figure, NF (dB)
VCE = 1 V
f = 2 GHz
0
0
100
10
Collector Current, IC (mA)
10
0
1
20
Ga
4
16
12
3
2
8
NF
4
1
0
1
10
Collector Current, IC (mA)
0
100
UPA861TD
TYPICAL SCATTERING PARAMETERS
+90°
j50
+120°
j25
+60°
j100
S21 = 10
+150°
+30°
S12 = .2
j10
0
10
25
50
+180°
100
+0°
S22 = 1
-j10
-150°
S11 = 1
Coordinates in Ohms
Frequency in GHz
VCE = 1 V, IC = 10 mA
-j100
-j25
-j50
GHz
S11
MAG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
0.691
0.625
0.559
0.507
0.470
0.445
0.426
0.415
0.408
0.404
0.402
0.400
0.401
0.403
0.406
0.410
0.414
0.419
0.424
0.428
0.434
0.438
0.443
0.447
0.452
0.456
0.461
0.464
0.467
0.470
S21
ANG
- 25.9
- 51.3
- 72.3
- 89.7
-104.3
-116.3
-126.4
-135.1
-142.8
-149.5
-155.5
-161.0
-165.9
-170.4
-174.4
-178.1
178.5
175.3
172.5
169.9
167.5
165.3
163.2
161.3
159.5
158.0
156.5
155.3
154.1
153.0
-120°
-60°
-90°
0.100 to 3.000GHz by 0.050
0.100 to 3.000GHz by 0.050
UPA861TD (Q1)
VCE = 1 V, IC = 10 mA
Frequency
-30°
MAG
20.769
18.506
16.074
13.885
12.048
10.549
9.332
8.348
7.536
6.861
6.287
5.800
5.380
5.014
4.693
4.409
4.155
3.930
3.729
3.543
3.376
3.223
3.086
2.959
2.842
2.734
2.634
2.544
2.459
2.381
S12
ANG
160.8
144.8
132.3
122.8
115.3
109.5
104.6
100.5
96.9
93.7
90.8
88.2
85.7
83.4
81.2
79.2
77.3
75.4
73.6
71.9
70.2
68.6
67.1
65.7
64.2
62.8
61.5
60.1
58.8
57.6
MAG
0.018
0.033
0.044
0.052
0.058
0.064
0.068
0.073
0.078
0.082
0.087
0.091
0.096
0.100
0.105
0.110
0.114
0.119
0.123
0.128
0.133
0.137
0.142
0.146
0.151
0.155
0.160
0.164
0.169
0.173
S22
ANG
78.6
66.0
59.6
55.7
53.8
52.4
52.1
51.9
52.0
52.0
52.4
52.7
52.9
53.1
53.1
53.3
53.4
53.4
53.4
53.2
53.2
53.0
53.0
52.8
52.6
52.3
52.2
51.9
51.8
51.4
MAG
0.902
0.793
0.678
0.581
0.501
0.440
0.389
0.349
0.317
0.291
0.269
0.250
0.234
0.222
0.212
0.204
0.198
0.193
0.190
0.188
0.188
0.188
0.189
0.190
0.192
0.193
0.195
0.198
0.200
0.202
K
ANG
- 18.3
- 32.9
- 44.0
- 52.3
- 58.7
- 63.8
- 68.2
- 72.0
- 75.7
- 79.2
- 82.6
- 86.1
- 89.6
- 93.1
- 96.9
-100.5
-104.0
-107.7
-111.4
-114.7
-118.1
-121.1
-124.1
-126.8
-129.2
-131.1
-132.9
-134.4
-136.1
-137.1
MAG1
(dB)
0.17
0.28
0.38
0.47
0.56
0.63
0.70
0.76
0.81
0.85
0.89
0.92
0.95
0.97
1.00
1.01
1.03
1.05
1.06
1.07
1.08
1.08
1.09
1.10
1.10
1.11
1.11
1.11
1.12
1.12
30.51
27.44
25.58
24.25
23.17
22.20
21.35
20.58
19.88
19.22
18.61
18.03
17.49
16.99
16.50
15.32
14.53
13.89
13.35
12.83
12.37
11.93
11.53
11.15
10.80
10.46
10.15
9.85
9.56
9.30
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
UPA861TD
TYPICAL SCATTERING PARAMETERS
+90°
j50
+120°
j25
+60°
j100
S21 = 10
+150°
+30°
S12 = .2
j10
S11 = 1
0
10
25
50
100
-j10
+180°
+0°
S22 = 1
-150°
Coordinates in Ohms
Frequency in GHz
VCE = 1 V, IC = 20 mA
-j100
-j25
-j50
0.100 to 3.000GHz by 0.050
UPA861TD (Q2)
VCE = 1 V, IC = 20 mA
Frequency
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
MAG
0.401
0.358
0.308
0.265
0.231
0.206
0.187
0.174
0.164
0.159
0.156
0.154
0.154
0.157
0.160
0.165
0.170
0.177
0.183
0.190
0.197
0.204
0.211
0.218
0.224
0.231
0.237
0.243
0.249
0.254
S21
ANG
-120°
-60°
-90°
0.100 to 3.000GHz by 0.050
S11
- 21.6
- 40.9
- 56.8
- 70.1
- 81.9
- 92.6
-102.5
-111.7
-120.4
-128.6
-136.3
-143.5
-150.2
-156.0
-161.2
-165.9
-170.1
-174.0
-176.9
-179.8
177.6
175.8
173.4
171.9
170.2
169.0
167.8
166.9
165.9
165.3
-30°
MAG
29.200
25.940
22.512
19.468
16.923
14.860
13.191
11.835
10.710
9.775
8.985
8.311
7.727
7.219
6.772
6.381
6.030
5.716
5.437
5.180
4.949
4.736
4.543
4.366
4.200
4.047
3.906
3.776
3.654
3.542
S12
ANG
161.7
145.9
133.8
124.6
117.4
111.7
107.0
103.0
99.5
96.4
93.6
91.0
88.7
86.4
84.3
82.4
80.5
78.6
76.8
75.2
73.5
71.8
70.3
68.8
67.2
65.8
64.3
62.9
61.5
60.1
MAG
0.008
0.015
0.022
0.027
0.031
0.036
0.040
0.045
0.049
0.054
0.059
0.063
0.068
0.072
0.077
0.082
0.087
0.092
0.096
0.101
0.106
0.111
0.116
0.121
0.126
0.130
0.135
0.141
0.146
0.151
S22
ANG
83.0
74.6
72.4
72.0
72.1
71.6
72.0
72.0
72.3
72.5
72.7
72.8
72.9
72.9
72.8
72.7
72.5
72.3
72.0
71.8
71.6
71.3
71.1
70.8
70.4
70.0
69.6
69.4
68.9
68.5
MAG
0.891
0.805
0.710
0.629
0.563
0.512
0.471
0.439
0.413
0.391
0.372
0.355
0.341
0.328
0.316
0.306
0.297
0.288
0.280
0.273
0.266
0.261
0.255
0.250
0.245
0.242
0.238
0.237
0.234
0.235
K
ANG
- 12.9
- 23.2
- 30.3
- 35.1
- 38.1
- 40.2
- 41.6
- 42.7
- 43.7
- 44.7
- 45.5
- 46.6
- 47.6
- 48.7
- 50.1
- 51.4
- 52.9
- 54.6
- 56.4
- 58.3
- 60.4
- 62.5
- 64.8
- 67.0
- 69.4
- 71.7
- 74.1
- 76.5
- 79.1
- 81.3
MAG1
(dB)
0.43
0.51
0.62
0.71
0.79
0.86
0.90
0.94
0.97
0.99
1.00
1.02
1.03
1.04
1.05
1.05
1.06
1.06
1.07
1.07
1.07
1.07
1.07
1.07
1.07
1.06
1.06
1.06
1.06
1.05
35.60
32.24
30.19
28.66
27.35
26.20
25.15
24.22
23.37
22.58
21.43
20.30
19.45
18.73
18.06
17.48
16.93
16.43
15.96
15.52
15.11
14.73
14.35
14.01
13.68
13.37
13.07
12.81
12.53
12.31
UPA861TD
NON-LINEAR MODEL
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters
Q1
Q2
Parameters
Q1
Q2
IS
8e-17
137e-18
MJC
0.53
0.24
BF
128
129
XCJC
1
0.3
NF
1
0.9992
CJS
0
0
VAF
17
22.4
VJS
0.75
0.75
IKF
0.18
2.8
MJS
0
0
ISE
3.3e-15
229e-15
FC
0.37
0.55
NE
1.48
2.5
TF
6e-12
5e-12
BR
9.05
81.7
XTF
11.9
0.05
NR
1.05
0.9944
VTF
9.55
0.5
VAR
4.3
1.9
ITF
1.78
0.005
IKR
0.009
0.018
PTF
69.1
0
ISC
4e-15
227e-18
TR
1e-9
1.0e-9
NC
2
1.17
EG
1.11
1.11
RE
0.8
0.75
XTB
0
0
RB
11.1
5
XTI
3
3
RBM
2.46
3
KF
0
117e-15
IRB
0.02
0.005
AF
1
1.34
RC
7.5
6
CJE
0.415e-12
0.68e-12
VJE
0.68
0.92
MJE
0.53
0.26
CJC
0.102e-12
0.16e-12
VJC
0.29
0.64
(1) Gummel-Poon Model
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias:
VCE =0.5 V to 2.5 V, IC = 0.5 mA to 20 mA
Date:
09/02
UPA861TD
SCHEMATIC
0.1 pF
C_C1B2
0.03 pF
CCBPKG1
Pin_1
LC
LC1
0.2 pF
0.01 nH
0.85 nH
CCB1
C_C1E1
0.05 pF
Pin_2
CCE1
0.25 pF
LE
LE1
0.01 nH
0.45 nH
C_E1C2
0.05 pF
Q1
LB1
LB
1.05 nH
0.01 nH
C_E1B2
0.1 pF
LE2
CCE2
LC
LC2
0.01 nH
0.95 nH
CCB2
0.01 pF
C_B1B2
0.01 pF
LE
0.01 nH
0.55 nH
Pin_5
C_B2E2
0.01 pF
0.35 pF
Pin_3
Pin_6
Q2
LB2
0.9 nH
LB
0.01 nH
Pin_4
0.03 pF
CCEPKG2
0.1 pF
CCBPKG2
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias:
VCE = 0.5 V to 2.5 V, IC = 0.5 mA to 20 mA
Date:
09/02
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
09/17/2002
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
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suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.