NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 0.1 3 0.2+0.1 ñ0.05 0.3 0.1 0.125+0.1 ñ0.05 NEC's NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low current operation, low noise, and high gain. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. 0.15+0.1 ñ0.05 1.0+0.1 ñ0.05 DESCRIPTION 1 B7 • UHSO 25 GHz PROCESS 2 0.7 • LOW NOISE, HIGH GAIN (Bottom View) 0.5+0.1 ñ0.05 0.35 • IDEAL FOR > 3 GHz OSCILLATORS • LOW Cre 0.7±0.05 0.15+0.1 ñ0.05 0.5±0.05 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance 0.35 • ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOLS fT PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz |S21E|2 Cre Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 |NF ICBO hFE Insertion Power Gain at VCE = 1 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT Collector Cutoff Current at VCB = 5 V, IE = 0 DC Current Gain2 at VCE = 1 V, IC = 5 mA Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 3. Collector to base capacitance when the emitter is grounded UNITS MIN GHz 17 dB dB pF 11 – 0.2 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector NE894M13 2SC5787 M13 TYP 20 13 1.4 MAX – – 2.5 – 0.22 0.30 – – 100 nA – 50 nA 0.2 – – 100 100 California Eastern Laboratories NE894M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) ORDERING INFORMATION PART NUMBER NE894M13-A QUANTITY 50 PCS (Non reel) NE894M13-T3-A 10 kpcs/reel SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage IC PT TSTG VEBO Emitter to Base Voltage 2 TJ V 3.0 V 1.5 Collector Current mA 35 Total Power Dissipation mW 105 °C -65 to +150 Junction Temperature °C Storage Temperature 150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance, Cre (pF) Total Power Dissipation, Ptot (mW) 150 Mounted on Glass epoxy PCB (1.08 cm 2 x 1.0 mm (t) ) 125 105 100 75 50 25 0 0 25 50 75 100 125 0.5 f = 1 MHz 0. 4 0. 3 0. 2 0. 1 0 0 150 6 8 10 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 40 V CE = 1 V 500 µA 10 Collector Current, IC (mA) Collector Current, IC (mA) 4 Collector to Base Voltage, VCB (V) Ambient Temperature, TA (°C) 100 2 1 0.1 0.01 400 µA 450 µA 350 µA 30 300 µA 250 µA 20 200 µA 150 µA 100 µA 10 0.001 I B = 500 µA 0 0.000 1 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage, VBE (V) 1.0 0 1 2 3 4 Collector to Emitter Voltage, VCE (V) 5 NE894M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 40 V CE = 1 V f = 2 GHz Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) 24 20 16 12 8 4 0 1 30 MSG MAG 25 20 15 10 |S 21e |2 5 0 100 10 V CE = 1 V I C = 20 mA 35 0.1 1 Collector Current, IC (mA) Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MSG Insertion Power Gain, |S21e| (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) V CE = 2 V f = 2 G Hz MAG 2 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) 20 16 12 8 |S 21e |2 4 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT V CE = 2 V f = 2 G Hz MSG 16 12 MAG |S 21e |2 8 4 0 0 1 10 1 100 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 20 Insertion Power Gain, |S21e| (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) V CE = 1 V f = 4 GHz 16 2 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) 10 Associated Gain, Ga (dB) Gain Bandwidth Product, fT (GHz) 28 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 12 MS G MAG 8 |S 21e |2 4 0 1 10 Collector Current, IC (mA) 100 V CE = 2 V f = 4 GHz 16 12 MS G MAG 8 |S 21e |2 4 0 1 10 Collector Current, IC (mA) 100 NE894M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 5 4 16 4 16 3 12 3 12 2 8 2 8 20 4 Noise Figure, NF (dB) NF 1 Ga Associated Gain, Ga (dB) Noise Figure, NF (dB) Ga NF 1 V CE = 1 V f = 1 GHz 0 1 10 Collector Current, IC (mA) 100 0 4 V CE = 1 V f = 2 GHz 0 1 10 Collector Current, IC (mA) 100 0 Associated Gain, Ga (dB) 5 NE894M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90˚ 120˚ j100 j25 60˚ S21 150˚ j10 0 S12 30˚ S 11 10 25 -j10 100 50 0 180˚ S 22 0˚ -150˚ -30˚ -j100 -j25 -120˚ -j50 -60˚ -90˚ 0.100 to 12.000 GHz by 0.050 0.100 to 12.000GHz by 0.050 NE894M13 C = 1 V, IC = 5 mA V FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 S11 MAG ANG 0.772 - 11.0 0.747 - 24.6 0.715 - 36.5 0.677 - 47.7 0.612 - 59.5 0.575 - 68.8 0.544 - 76.9 0.517 - 84.6 0.493 - 91.3 0.474 - 97.3 0.383 -135.0 0.362 -155.9 0.355 -175.7 0.352 169.2 0.339 158.2 0.359 145.9 0.394 132.7 0.432 121.6 0.466 110.0 0.489 99.5 0.489 92.9 S21 MAG 13.002 12.548 11.948 11.241 10.457 9.699 8.993 8.364 7.756 7.228 4.155 2.920 2.253 1.821 1.561 1.390 1.251 1.137 1.026 0.930 0.878 ANG 169.8 159.5 150.4 142.4 134.1 127.9 122.5 117.7 113.5 109.6 84.4 68.1 54.6 44.0 36.0 28.0 20.9 14.9 10.5 8.9 9.3 S12 MAG 0.011 0.022 0.032 0.040 0.046 0.051 0.056 0.059 0.062 0.065 0.088 0.120 0.162 0.215 0.281 0.358 0.438 0.513 0.569 0.609 0.653 ANG 85.6 76.8 70.6 66.2 61.3 58.2 56.5 54.9 54.1 53.6 58.8 67.4 72.0 73.4 72.6 68.5 62.5 55.6 48.7 43.9 40.4 S22 K MAG ANG 0.966 - 8.4 0.10 0.928 - 15.8 0.17 0.883 - 22.5 0.22 0.835 - 28.3 0.27 0.758 - 31.4 0.39 0.707 - 35.7 0.44 0.658 - 39.1 0.50 0.623 - 41.6 0.54 0.590 - 44.1 0.59 0.558 - 45.9 0.65 0.411 - 59.5 1.01 0.383 - 73.2 1.10 0.412 - 88.5 1.05 0.476 - 98.4 0.95 0.512 -103.6 0.86 0.522 -114.0 0.81 0.523 -127.0 0.79 0.521 -142.1 0.80 0.543 -157.6 0.84 0.572 -165.7 0.87 0.567 -168.8 0.90 MAG1 (dB) 30.55 27.54 25.75 24.50 23.57 22.79 22.09 21.50 20.94 20.46 16.27 11.97 10.08 9.28 7.44 5.89 4.56 3.45 2.56 1.84 1.28 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K £ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | D | - |S11| - |S22| , D = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE894M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90˚ 120˚ j100 j25 60˚ S21 150˚ j10 10 0 S12 30˚ S 11 25 -j10 100 50 0 180˚ S 22 0˚ -150˚ -30˚ -j100 -j25 -120˚ -j50 -60˚ -90˚ 0.100 to 12.000 GHz by 0.050 0.100 to 4.000GHz by 0.050 NE894M13 C = 1 V, IC = 20 mA V FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 S11 MAG 0.401 0.374 0.345 0.323 0.290 0.282 0.277 0.274 0.273 0.271 0.272 0.275 0.278 0.268 0.243 0.262 0.300 0.343 0.386 0.417 0.423 ANG - 25.4 - 50.1 - 69.6 - 85.0 -100.7 -111.9 -119.6 -126.5 -132.5 -137.0 -162.0 -176.0 167.1 153.9 146.2 138.9 129.8 122.0 112.1 102.2 96.7 S21 MAG 29.774 26.263 22.629 19.474 16.742 14.691 13.024 11.685 10.574 9.642 5.122 3.539 2.723 2.223 1.922 1.720 1.565 1.439 1.316 1.199 1.123 ANG 160.5 145.4 133.7 124.8 117.7 112.3 108.0 104.4 101.2 98.5 80.3 67.7 56.9 47.9 40.4 32.9 25.9 19.5 13.9 10.5 8.8 S12 MAG 0.009 0.018 0.024 0.029 0.034 0.038 0.043 0.047 0.051 0.056 0.100 0.147 0.196 0.245 0.300 0.360 0.421 0.482 0.532 0.572 0.617 ANG 82.2 74.2 71.0 68.3 67.8 67.6 68.0 68.5 69.0 69.5 72.3 71.6 69.5 66.9 64.6 60.8 56.4 51.5 46.5 42.8 40.2 S22 K MAG ANG 0.879 - 15.8 0.40 0.786 - 28.2 0.45 0.689 - 37.3 0.54 0.607 - 43.9 0.63 0.506 - 46.3 0.75 0.450 - 50.3 0.81 0.405 - 53.1 0.86 0.374 - 54.5 0.90 0.349 - 56.2 0.93 0.324 - 57.3 0.95 0.228 - 66.9 1.06 0.221 - 80.0 1.05 0.261 - 95.5 1.03 0.331 -101.9 0.99 0.369 -102.7 0.95 0.379 -111.1 0.91 0.384 -122.9 0.89 0.389 -136.9 0.88 0.425 -152.2 0.88 0.472 -159.8 0.88 0.488 -161.6 0.88 MAG1 (dB) 35.10 31.74 29.72 28.21 26.95 25.83 24.84 23.94 23.14 22.37 15.65 12.37 10.35 9.58 8.07 6.80 5.70 4.75 3.93 3.21 2.60 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K £ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | D | - |S11| - |S22| , D = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE894M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90˚ 120˚ j100 j25 60˚ S21 150˚ j10 0 S12 10 25 -j10 100 50 180˚ 0 S 22 0˚ -150˚ -j100 -j25 -30˚ -120˚ -j50 NE894M13 C = 2 V, IC = 10 mA V FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 0.100 to 12.000GHz by 0.050 S11 MAG 0.634 0.601 0.559 0.515 0.451 0.417 0.391 0.369 0.351 0.337 0.279 0.266 0.262 0.255 0.237 0.259 0.300 0.347 0.392 0.425 0.433 ANG - 14.2 - 30.0 - 43.3 - 55.3 - 67.4 - 77.1 - 84.8 - 92.2 - 98.6 -104.1 -137.6 -155.9 -175.2 170.3 161.9 151.8 139.9 129.8 117.8 106.1 99.2 -60˚ -90˚ 0.100 to 12.000 GHz by 0.050 30˚ S 11 S21 MAG 21.168 19.847 18.259 16.598 14.913 13.497 12.240 11.177 10.239 9.431 5.194 3.616 2.787 2.259 1.936 1.731 1.571 1.439 1.303 1.170 1.080 ANG 166.5 154.5 144.2 135.6 127.5 121.5 116.5 112.3 108.5 105.2 83.8 69.6 57.5 47.6 39.8 32.0 24.6 17.8 12.0 8.7 7.5 S12 MAG 0.010 0.017 0.024 0.029 0.034 0.038 0.042 0.045 0.049 0.052 0.084 0.123 0.168 0.217 0.276 0.344 0.418 0.493 0.555 0.600 0.648 ANG 85.7 75.7 70.8 67.6 64.9 63.7 63.5 63.2 63.5 63.9 70.4 74.0 74.7 73.9 72.7 69.3 64.4 58.5 52.3 47.5 44.1 S22 K MAG ANG 0.945 - 10.0 0.19 0.890 - 18.5 0.28 0.826 - 25.6 0.36 0.763 - 31.2 0.43 0.676 - 33.5 0.56 0.621 - 37.1 0.62 0.572 - 39.6 0.68 0.539 - 41.3 0.73 0.510 - 42.9 0.78 0.481 - 43.9 0.82 0.363 - 52.7 1.04 0.345 - 64.5 1.05 0.373 - 79.7 1.00 0.439 - 89.6 0.93 0.483 - 93.7 0.86 0.499 -102.7 0.81 0.505 -114.4 0.78 0.508 -128.5 0.77 0.535 -144.5 0.78 0.573 -153.9 0.80 0.581 -157.6 0.82 MAG1 (dB) 33.43 30.64 28.79 27.51 26.40 25.49 24.65 23.93 23.24 22.61 16.74 13.31 11.92 10.17 8.47 7.02 5.75 4.65 3.71 2.90 2.22 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K £ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | D | - |S11| - |S22| , D = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE894M13 NONLINEAR MODEL SCHEMATIC CCBPKG 0.05 pF CCB 0.01 pF LBPKG 0.05 nH LCPKG 0.05 nH LB 0.3 nH Base Collector CCE Q1 0.4 pF LE 0.42 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS(1) ADDITIONAL PARAMETERS Parameters IS BF NF VAF ISE Q1 137e-18 Parameters 129 XCJC 0.9992 CJS 22.4 IKF NE BR 2.8 MJS FC TF 0.55 5e-12 81.7 XTF 0.05 1.9 ITF 0.005 0.9944 IKR ISC 227e-18 NC 1.17 RB 5 0.018 RE RBM MJE VJC CJC 1.11 VJE 0.92 0.26 0.16e-12 0.64 0 EG 6 0.68e-12 0.5 1.0e-9 KF CJE 0 TR 3 PTF XTB 0.005 RC VTF 0.75 IRB 0 229e-15 VAR 0.3 0.75 0.24 VJS 2.5 NR MJC Q1 XTI AF Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX NE894M13 0.01 pF 0.4 pF 0.3 nH 0.42 nH 0.05 pF 0.05 pF 0.05 nH 0.05 nH 0.05 nH MODEL TEST CONDITIONS Frequency: 0.1 to 10 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 20 mA Date: 11/2001 0 3 117e-15 1.34 (1) Gummel-Poon Model EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 02/14/2007 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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