NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY
LOW DISTORTION AMPLIFIER
FEATURES
•
•
PACKAGE OUTLINE M02
HIGH COLLECTOR CURRENT:
100 mA MAX
NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
HIGH OUTPUT POWER AT 1 dB COMPRESSION:
22 dBm TYP at 1 GHz
HIGH IP3:
32 dBm TYP at 1 GHz
BOTTOM VIEW
4.5±0.1
1.6±0.2
C
E
B
E
0.8
MIN
DESCRIPTION
NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE856M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
1.5±0.1
0.42
±0.06
0.42
±0.06
3.95±0.26
•
OUTLINE DIMENSIONS (Units in mm)
2.45±0.1
•
NE856M02
0.25±0.02
0.45
±0.06
1.5
3.0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE856M02
2SC5336
M02
UNITS
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
hFE2
DC Current Gain at VCE = 10 V, IC = 20 mA
fT
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA
MIN
TYP
MAX
1.0
1.0
50
120
GHz
6.5
CRE3
Feed-back Capacitance at VCB = 10 V, IE = 0, f = 1.0 MHz
pF
0.5
|S21E|2
Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz
dB
12.0
NF1
Noise Figure 1 at VCE = 10 V, IC = 7 mA, f = 1 GHz
dB
1.1
NF2
Noise Figure 2 at VCE = 10 V, IC = 40 mA, f = 1 GHz
dB
1.8
250
0.8
3.0
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
California Eastern Laboratories
NE856M02
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
20
VCEO
Collector to Emitter Voltage
V
12
VEBO
Emitter to Base Voltage
V
3.0
mA
100
IC
Collector Current
PT
Total Power Dissipation2
W
1.2
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKAGING
1000
Tape & Reel
NE856M02-T1-AZ
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Device mounted on 0.7 mm X 16 cm2 double-sided ceramic
substrate (copper plating).
TYPICAL PERFORMANCE CURVES (TA = 25°C)
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Feed-back Capacitance, Cre (pF)
Total Power Dissipation, PT (W)
5.0
2.0
Ceramic Substrate
16 cm 2 x 0.7 mm
1.0
Free Air
RTH (J-A) 312.5 °CW
0
50
100
f = 1.0 MHz
3.0
2.0
1.0
0.5
0.8
1
150
Ambient Temperature, TA (°C)
5
10
20
30
INSERTION GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
15
Insertion Power Gain, |S21E|2 (dB)
VCE = 10 V
DC Current Gain, hFE
3
Collector to Base Voltage, VCB (V)
100
50
20
VCE = 10 V
f = 1 GHz
10
5
0
10
0.5
1
5
10
Collector Current, Ic (mA)
50
1
3
5
10
20 30
Collector Current, IC (mA)
50
100
NE856M02
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION GAIN AND MAXIMUM
GAIN vs. FREQUENCY
GAIN BAND WIDTH PRODUCT vs.
COLLECTOR CURRENT
10
5
3
2
1
0.5
0.3
VCE = 10 V
f = 1 GHz
Maximum Available Gain, MAG (dB)
Insertion Power Gain, IS21E|2 (dB)
Gain Bandwidth Product, fT (GHz)
2
|S21E|
MAG
20
10
VCE = 10 V
Ic = 20 mA
0
1
3
5
10
20
30
50
0.2
0.4
0.6 0.8 1.0 1.4
2.0
Frequency, f (GHz)
Collector Current, Ic (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
7
Intermodulation Distortion, IM2 (dBc)
VCE = 10 V
f = 1 GHz
Noise Figure, NF (dB)
6
5
4
3
2
1
-80
IM3
-70
-60
IM2
-50
at
-40
0.5
1
5
10
Collector Current, Ic (mA)
50
VCE = 10 V
VO = 100 dBµ V/50 Ω
Rg = Re 50 Ω
IM 2 f = 90 + 100 MHz
IM3 f = 2 x 200 - 190 MHz
-30
0
{
20
30
40
50
60
Collector Current, IC (mA)
70
NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
90˚
j50
j100
j25
135˚
S21
0.1 GHz
S22
3 GHz
j10
45˚
S21
3 GHz
180˚
0
S11
3 GHz
S11
0.1 GHz
-j25
Coordinates in Ohms
Frequency in GHz
VCE = 3 V, IC = 10 mA
-j100
0˚
S12
0.1 GHz
S22
0.1 GHz
-j10
S12
3 GHz
315˚
225˚
-j50
270˚
NE856M02
VCE = 3 V, IC = 10 mA
FREQUENCY
S11
(GHz)
MAG
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.626
0.535
0.479
0.465
0.461
0.459
0.458
0.458
0.457
0.458
0.457
0.457
0.458
0.459
0.460
0.462
S21
ANG
-67.5
-110.6
-149.7
-168.7
178.6
168.7
160.4
152.9
146.0
139.5
133.2
127.0
121.2
115.4
109.7
103.9
MAG
20.474
14.152
7.982
5.464
4.146
3.339
2.800
2.415
2.127
1.905
1.728
1.582
1.464
1.363
1.278
1.204
S12
ANG
137.7
115.2
94.8
83.6
75.2
68.0
61.5
55.5
49.9
44.6
39.5
34.7
30.2
26.0
21.9
17.9
S22
MAG
ANG
MAG
0.031
0.044
0.059
0.073
0.089
0.104
0.121
0.138
0.155
0.171
0.188
0.205
0.222
0.239
0.256
0.272
60.2
50.4
50.0
53.3
55.6
56.7
56.9
56.7
55.8
54.8
53.5
51.9
50.2
48.6
46.6
44.5
0.766
0.541
0.366
0.316
0.306
0.311
0.323
0.340
0.358
0.376
0.394
0.412
0.428
0.442
0.455
0.466
K
ANG
-36.6
-52.5
-63.4
-68.4
-72.9
-77.1
-81.0
-84.8
-88.1
-91.4
-94.3
-97.1
-99.7
-102.2
-104.8
-107.4
MAG
(dB)
0.26
0.47
0.77
0.94
1.03
1.08
1.10
1.11
1.10
1.10
1.08
1.07
1.05
1.04
1.02
1.01
28.2
25.1
21.3
18.7
15.7
13.3
11.7
10.5
9.4
8.6
7.9
7.2
6.8
6.3
6.0
5.7
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
90˚
j50
j100
j25
135˚
S21
0.1 GHz
S11
3 GHz
j10
45˚
S12
3 GHz
S21
3 GHz
180˚
0
S22
0.1 GHz
-j10
S22
3 GHz
S11
0.1 GHz
-j25
Coordinates in Ohms
Frequency in GHz
VCE = 5 V, IC = 20 mA
-j100
0˚
S12
0.1 GHz
315˚
225˚
-j50
270˚
NE856M02
VCE = 5 V, IC = 20 mA
FREQUENCY
S11
(GHz)
MAG
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.481
0.434
0.414
0.411
0.410
0.410
0.409
0.409
0.408
0.407
0.406
0.406
0.406
0.406
0.408
0.409
S21
ANG
-88.5
-130.1
-162.4
-178.1
171.0
162.2
154.5
147.5
140.9
134.6
128.6
122.7
117.0
111.4
105.9
100.4
MAG
28.679
17.703
9.494
6.428
4.855
3.900
3.265
2.810
2.471
2.208
2.000
1.829
1.689
1.571
1.471
1.384
S12
ANG
129.0
108.4
91.4
81.9
74.4
67.9
61.9
56.3
51.0
45.9
41.1
36.4
32.0
27.7
23.7
19.7
S22
MAG
ANG
MAG
0.023
0.031
0.048
0.066
0.084
0.101
0.120
0.137
0.154
0.172
0.188
0.205
0.222
0.238
0.253
0.268
57.9
56.9
62.0
64.1
65.0
64.4
63.2
61.8
60.0
58.2
56.2
54.1
52.0
49.8
47.6
45.3
0.664
0.445
0.311
0.280
0.280
0.290
0.305
0.323
0.343
0.362
0.381
0.399
0.416
0.431
0.445
0.457
K
ANG
-41.3
-52.9
-58.6
-62.1
-66.4
-70.7
-74.9
-79.0
-82.5
-85.9
-88.8
-91.7
-94.4
-96.9
-99.4
-101.9
MAG
(dB)
0.42
0.68
0.92
1.02
1.05
1.07
1.07
1.07
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
31.0
27.5
22.9
19.1
16.2
14.2
12.7
11.4
10.4
9.6
8.9
8.3
7.8
7.4
7.1
7.1
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
90˚
j50
j100
j25
135˚
j10
45˚
S21
0.1 GHz
S11
3 GHz
S12
3 GHz
S21
3 GHz
180˚
0
0˚
S12
0.1 GHz
S22
0.1 GHz
-j10
S11
0.1 GHz
S22
3 GHz
-j25
Coordinates in Ohms
Frequency in GHz
VCE = 10 V, IC = 20 mA
-j100
315˚
225˚
-j50
270˚
NE856M02
VCE = 10 V, IC = 20 mA
FREQUENCY
S11
(GHz)
MAG
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.508
0.425
0.384
0.376
0.374
0.374
0.375
0.375
0.375
0.376
0.377
0.378
0.380
0.382
0.385
0.388
S21
ANG
-78.9
-120.5
-156.2
-173.7
174.4
164.9
156.8
149.5
142.7
136.2
130.1
123.9
118.2
112.6
107.0
101.4
MAG
29.606
18.715
10.140
6.875
5.192
4.168
3.481
2.990
2.620
2.337
2.109
1.922
1.770
1.640
1.531
1.435
S12
ANG
131.4
110.2
92.5
82.6
75.0
68.3
62.2
56.6
51.2
46.1
41.2
36.5
32.1
27.8
23.7
19.8
S22
MAG
ANG
MAG
0.019
0.029
0.043
0.058
0.074
0.090
0.106
0.122
0.137
0.153
0.168
0.183
0.198
0.213
0.227
0.242
57.0
57.5
62.1
64.6
65.4
65.3
64.5
63.4
61.9
60.3
58.6
56.8
54.8
53.2
51.1
49.1
0.707
0.500
0.373
0.347
0.346
0.356
0.370
0.387
0.406
0.424
0.443
0.461
0.478
0.494
0.508
0.521
K
ANG
-34.0
-42.7
-45.9
-48.9
-53.4
-58.2
-63.0
-67.7
-71.9
-75.9
-79.4
-82.9
-85.9
-88.8
-91.7
-94.5
MAG
(dB)
0.43
0.65
0.91
1.01
1.05
1.07
1.07
1.07
1.06
1.05
1.04
1.03
1.01
0.99
0.98
0.97
32.0
28.1
23.7
20.0
17.1
15.0
13.5
12.3
11.3
10.4
9.7
9.2
8.9
8.9
8.3
7.7
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
90˚
j50
j100
j25
135˚
45˚
S21
0.1 GHz
j10
S11
3 GHz
180˚
0
S22
3 GHz
-j25
0˚
S12
0.1 GHz
S11
0.1 GHz
-j10
S12
3 GHz
S21
3 GHz
S22
0.1 GHz
Coordinates in Ohms
Frequency in GHz
VCE = 10 V, IC = 50 mA
-j100
315˚
225˚
-j50
270˚
NE856M02
VCE = 10 V, IC = 50 mA
FREQUENCY
S11
(GHz)
MAG
0.100
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.388
0.380
0.377
0.378
0.379
0.380
0.381
0.382
0.381
0.382
0.383
0.383
0.385
0.386
0.389
0.392
S21
ANG
-113.0
-147.3
-172.1
175.4
166.1
158.2
151.2
144.7
138.5
132.5
126.8
121.0
115.6
110.2
104.8
99.5
MAG
35.396
20.013
10.398
6.989
5.262
4.218
3.521
3.023
2.650
2.362
2.132
1.943
1.789
1.657
1.547
1.450
S12
ANG
119.8
102.2
88.1
79.6
72.7
66.5
60.7
55.3
50.1
45.1
40.2
35.6
31.2
27.0
22.9
19.0
MAG
0.015
0.023
0.040
0.057
0.075
0.092
0.109
0.125
0.141
0.157
0.173
0.188
0.203
0.218
0.232
0.246
S22
ANG
64.1
66.1
70.5
71.3
71.0
69.4
67.8
65.9
64.0
62.0
59.9
57.7
55.6
53.6
51.3
49.3
MAG
0.569
0.399
0.325
0.316
0.324
0.337
0.354
0.373
0.393
0.412
0.432
0.451
0.468
0.485
0.500
0.513
K
MAG
ANG
-38.2
-40.5
-41.0
-44.8
-50.2
-55.9
-61.1
-66.2
-70.7
-74.9
-78.6
-82.1
-85.3
-88.3
-91.2
-94.0
(dB)
0.60
0.85
1.00
1.05
1.06
1.07
1.06
1.06
1.05
1.04
1.03
1.01
1.00
0.98
0.97
0.96
33.7
29.4
23.7
19.5
16.9
15.1
13.6
12.4
11.4
10.6
9.9
9.4
9.5
8.8
8.2
7.7
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
11/14/2001
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.