NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. DESCRIPTION M04 NEC's NE661M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE661M04 is usable in applications from 100 MHz to 10 GHz. The NE661M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE661M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE DC SYMBOLS UNITS ICBO Collector Cutoff Current at VCE = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE Forward Current Gain2 at VCE = 2 V, IC = 5 mA fT MSG |S21E|2 RF PARAMETERS AND CONDITIONS NE661M04 2SC5507 M04 NF P1dB Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Maximum Stable Gain4 at VCE = 2 V, IC = 5 mA, f = 2 GHz GHz MIN dB Noise Figure at VCE = 2 V, IC = 2 mA, f = 2 GHz, ZIN = ZOPT dB MAX 0.1 0.1 50 70 20 25 14 17 dB Insertion Power Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz TYP 100 22 1.2 Output Power at 1 dB compression point at VCE = 2 V, IC = 5 mA, f = 2 GHz dBm 5 IP3 Third Order Intercept Point at VCE = 2 V, IC = 5 mA, f = 2 GHz dBm 15 Cre Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz pF 0.08 1.5 0.12 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MSG = S21 S12 California Eastern Laboratories NE661M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 15 VCEO Collector to Emitter Voltage V 3.3 VEBO Emitter to Base Voltage V 1.5 12 IC Collector Current mA PT Total Power Dissipation mW 39 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. THERMAL RESISTANCE ITEM SYMBOL VALUE UNIT Rth j-c Rth j-a 240 650 °C/W °C/W Junction to Case Resistance Junction to Ambient Resistance TYPICAL NOISE PARAMETERS (TA = 25˚C) FREQ. (GHz) NFOPT (dB) VC = 1 V, IC = 1 mA 0.50 1.08 0.90 1.13 1.00 1.14 1.50 1.20 2.00 1.29 2.50 1.40 3.00 1.55 GA (dB) MAG ANG 21.40 18.90 18.40 15.70 14.20 13.20 12.50 0.67 0.64 0.64 0.63 0.62 0.61 0.60 13 31 33 43 50 59 67 0.60 0.64 0.64 0.64 0.62 0.55 0.45 21.70 19.50 19.10 16.50 14.70 13.90 13.30 0.69 0.66 0.65 0.64 0.64 0.63 0.62 13 26 30 37 46 60 69 0.57 0.56 0.55 0.69 0.68 0.55 0.52 27.41 23.80 23.00 20.24 17.93 16.77 16.30 0.41 0.41 0.41 0.40 0.39 0.38 0.36 14 30 34 40 47 55 64 0.60 0.64 0.64 0.64 0.62 0.55 0.45 ΓOPT Rn/50 VC = 2 V, IC = 1 mA 0.50 0.90 1.00 1.50 2.00 2.50 3.00 1.12 1.15 1.16 1.23 1.32 1.45 1.60 VC = 2 V, IC = 5 mA 0.50 0.90 1.00 1.50 2.00 2.50 3.00 1.69 1.70 1.70 1.72 1.75 1.79 1.85 TYPICAL OPTIMAL NOISE MATCHING (TA = 25˚C) VC = 1 V, lC = 1 mA VC = 2 V, lC = 1 mA 1.0 1.0 2.0 0.5 2.0 0.5 ΓOPT ΓOPT 5.0 0.2 0 0.2 0.5 1.0 2.0 5.0 0 -5.0 -0.2 1.0 2.0 0.5 5.0 ΓOPT 0.2 0.5 1.0 2.0 5.0 0 -5.0 -0.2 -2.0 -0.5 -1.0 0.5 1.0 2.0 5.0 0 -5.0 -2.0 -1.0 VC = 2 V, lC = 5 mA 0 0.2 -0.5 -1.0 0.2 0 -0.2 -2.0 -0.5 5.0 0.2 NE661M04 TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. DC BASE VOLTAGE DC POWER DERATING CURVES 50 75 Device Mounted on a Ceramic PCB 50 25 Free Air Collector Current, IC (mA) Total Power Dissipation, PT (mW) 100 VCE = 2 V 40 30 20 10 0 50 100 117 134 150 0.2 0.4 0.6 0.8 1.0 Ambient Temperature, TA (°C) DC Base Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE FORWARD CURRENT GAIN vs. COLLECTOR GAIN 10 DC Forward Current Gain, hFE 8 100 µA 80 µA 6 60 µA 4 40 µA 20 µA 2 1.2 100 140 µA 120 µA Collector Current, Ic (mA) 0 80 60 40 IB = 5 µA 20 0 1.0 2.0 0 3.0 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR BASE VOLTAGE 6 30 0.30 f = 1 MHz 0.25 0.20 0.15 0.10 0.05 1.0 2.0 3.0 4.0 Collector to Base Voltage, VCB (V) 8 10 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) Reverse Transfer Capacitance, Cre (pF) 4 Collector Current, IC (mA) Collector to Emitter Voltage, VCE (V) 0 2 5.0 VCE = 3 V f = 2 GHz 25 20 15 10 5 0 1 10 Collector Current, IC (mA) 100 NE661M04 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE vs. FREQUENCY NOISE FIGURE vs. FREQUENCY VDS = 2 V ID = 1 mA 25 GA 1.4 20 NF 1.2 15 1.0 10 0.8 Noise Figure, NF (dB) Noise Figure, NF (dB) 1.6 Associated Gain, GA (dB) VDS = 1 V ID = 1 mA 0.5 1 1.5 2 2.5 3 25 GA 1.4 20 NF 1.2 15 1.0 10 0.8 5 0 1.6 5 0 3.5 0.5 1 Frequency, f (GHz) 30 GA 1.80 25 1.78 20 1.76 15 NF 1.74 10 1.72 5 VDS = 2 V ID = 5 mA 0 1.68 1 1.5 2 2.5 3 Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 1.82 Associated Gain, GA (dB) Noise Figure, NF (dB) 1.84 0.5 2 2.5 3 3.5 INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. FREQUENCY 1.86 0 1.5 Frequency, f (GHz) NOISE FIGURE vs. FREQUENCY 1.70 3.5 40 VCE = 2 V IC = 5 mA 35 30 MSG 25 MAG 20 |S21e|2 15 10 5 0 0.1 10.0 1.0 Frequency, f (GHz) INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER GAIN, MAXIMUM STABLE POWER GAIN vs. COLLECTOR CURRENT OUTPUT, COLLECTOR CURRENT vs. INPUT POWER 25 MAG MSG 20 15 |S21e|2 10 5 0 25 10 f = 2 GHz VCE = 2 V 1 10 Collector Current, IC (mA) f = 2 GHz VCE = 2 V Output Power, Pout (dBm) Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Frequency, f (GHz) 30 Associated Gain, GA (dB) 1.8 1.8 100 Pout 5 20 0 15 10 –5 IC –10 –15 –30 5 0 –25 –20 –15 –10 Input Power, Pin (dBm) –5 NE661M04 TYPICAL SCATTERING PARAMETERS (TA = 25˚C) +90˚ j50 +60˚ +120˚ j100 j25 +150˚ j10 +30˚ 8 GHz 10 0 -j10 25 50 S11 S22 0.1 GHz 0.1 GHz 100 8 GHz S21 0.1 GHz S12 0.1 GHz +180˚ +0˚ 8 GHz 8 GHz -30˚ -150˚ -j25 - j100 -60˚ -120˚ Coordinates in Ohms Frequency in GHz (VCE = 1 V, IC = 1 mA) -j50 -90˚ VC = 1 V, IC = 1 mA FREQUENCY (GHz) MAG 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 0.944 0.943 0.941 0.939 0.935 0.930 0.916 0.862 0.807 0.755 0.693 0.636 0.585 0.515 0.489 0.480 0.495 S11 S21 S12 S22 K ANG MAG ANG MAG ANG MAG ANG -4.3 -8.0 -11.9 -15.4 -19.2 -26.7 -37.4 -55.4 -72.7 -89.4 -106.9 -124.7 -143.5 178.7 143.2 109.3 75.6 2.912 2.868 2.845 2.837 2.845 2.807 2.734 2.614 2.526 2.337 2.236 2.095 1.977 1.746 1.521 1.325 1.155 172.0 171.3 168.3 164.2 160.7 153.5 144.1 126.2 110.8 96.3 82.4 68.9 55.6 30.4 6.9 -14.4 -34.5 0.005 0.009 0.013 0.017 0.021 0.028 0.038 0.051 0.061 0.068 0.071 0.072 0.071 0.066 0.061 0.066 0.076 84.9 77.9 75.1 73.0 70.8 66.3 59.6 46.5 36.2 26.8 18.3 10.7 4.5 -2.9 -1.9 0.9 2.0 0.991 0.970 0.955 0.943 0.935 0.922 0.906 0.850 0.821 0.794 0.768 0.744 0.723 0.696 0.689 0.688 0.679 -4.3 -7.6 -10.2 -12.8 -15.2 -19.9 -26.7 -37.3 -46.6 -55.1 -62.8 -70.1 -77.2 -91.7 -106.9 -119.9 -131.9 0.15 0.22 0.22 0.23 0.22 0.22 0.22 0.39 0.49 0.61 0.75 0.92 1.11 1.53 1.89 2.05 2.04 MAG1 (dB) 27.53 24.88 23.30 22.21 21.37 20.00 18.57 17.08 16.16 15.38 14.96 14.61 12.45 9.96 8.49 7.22 5.98 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE661M04 TYPICAL SCATTERING PARAMETERS (TA = 25˚C) j50 +90˚ j25 +60˚ +120˚ j100 +150˚ +30˚ j10 12 GHz 0 25 10 50 100 S11 0.1 GHz 12 GHz S22 0.1 GHz S12 0.1 GHz S21 0.1 GHz +180˚ +0˚ 12 GHz 12 GHz -j10 -30˚ -150˚ -j25 -j100 Coordinates in Ohms Frequency in GHz (VCE = 2 V, IC = 1 mA) -j50 -60˚ -120˚ -90˚ VC = 2 V, IC = 1 mA FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 S11 MAG 0.946 0.945 0.943 0.941 0.938 0.933 0.921 0.869 0.816 0.765 0.647 0.703 0.593 0.518 0.485 0.472 0.483 0.541 0.604 0.653 0.691 S21 S12 ANG MAG ANG -4.2 -7.7 -11.6 -14.9 -18.6 -25.9 -36.3 -53.9 -70.7 -87.0 -121.6 -104.1 -139.9 -177.4 147.0 112.6 78.3 49.9 28.4 10.2 -7.9 2.929 2.882 2.860 2.853 2.861 2.825 2.756 2.643 2.563 2.377 2.142 2.281 2.027 1.799 1.573 1.372 1.197 1.039 0.914 0.821 0.734 172.1 171.5 168.6 164.6 161.2 154.2 145.0 127.4 112.3 98.0 70.9 84.2 57.7 32.7 9.1 -12.2 -32.2 -51.0 -67.6 -84.2 -101.2 S22 MAG ANG MAG 0.005 0.008 0.012 0.015 0.018 0.025 0.033 0.045 0.053 0.059 0.063 0.062 0.062 0.057 0.056 0.064 0.078 0.098 0.120 0.144 0.168 84.2 76.7 74.8 72.6 70.6 66.5 60.4 47.8 38.1 29.2 14.4 21.3 9.4 4.6 8.2 11.0 10.5 4.2 -3.8 -15.4 -29.3 0.992 0.971 0.956 0.944 0.937 0.924 0.909 0.856 0.829 0.805 0.759 0.781 0.740 0.716 0.711 0.711 0.704 0.700 0.697 0.698 0.693 K MAG1 (dB) 0.16 0.25 0.24 0.25 0.24 0.23 0.23 0.40 0.50 0.62 0.94 0.76 1.14 1.58 1.86 1.89 1.82 1.56 1.30 1.07 0.96 28.12 25.51 23.91 22.79 21.95 20.61 19.19 17.72 16.82 16.05 15.33 15.65 12.87 10.51 9.10 7.86 6.62 5.85 5.53 5.90 6.41 ANG -4.2 -7.4 -10.0 -12.4 -14.7 -19.3 -25.9 -36.2 -45.2 -53.4 -68.1 -60.9 -75.2 -89.6 -104.7 -117.7 -129.7 -142.3 -154.8 -169.7 173.1 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE661M04 TYPICAL SCATTERING PARAMETERS (TA = 25˚C) j50 +90˚ +60˚ +120˚ j100 j25 +150˚ +30˚ j10 18 GHz 25 10 0 50 100 S11 0.1 GHz 18 GHz +180˚ S22 0.1 GHz S12 0.1 GHz S21 0.1 GHz +0˚ 18 GHz -j10 -30˚ -150˚ 18 GHz -j25 -j100 -j50 -60˚ -120˚ Coordinates in Ohms Frequency in GHz (VCE = 2 V, IC = 5 mA) -90˚ VC = 2 V, IC = 5 mA FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.70 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 S11 MAG 0.823 0.816 0.807 0.797 0.784 0.757 0.710 0.592 0.498 0.417 0.345 0.289 0.249 0.221 0.235 0.255 0.298 0.371 0.439 0.497 0.547 0.597 0.648 0.693 0.732 0.758 0.787 S21 S12 ANG MAG ANG -5.3 -11.4 -17.0 -22.0 -27.2 -37.1 -51.0 -71.5 -89.6 -106.7 -124.2 -143.0 -163.9 153.2 117.2 84.3 53.7 32.9 18.4 5.3 -9.8 -26.5 -42.6 -53.5 -64.5 -77.4 -89.6 10.113 9.907 9.734 9.571 9.433 9.037 8.386 7.208 6.429 5.446 4.809 4.283 3.862 3.218 2.732 2.369 2.074 1.834 1.657 1.521 1.395 1.269 1.147 1.041 0.963 0.864 0.756 172.3 167.9 163.0 158.1 153.3 144.0 131.4 111.1 95.0 80.7 67.8 55.9 44.7 23.5 3.3 -15.7 -33.9 -51.5 -67.9 -85.1 -103.4 -121.9 -140.2 -158.0 -176.4 163.2 144.0 MAG S22 ANG 0.004 81.5 0.008 75.6 0.011 72.1 0.014 70.1 0.017 67.9 0.022 63.3 0.029 57.0 0.036 47.3 0.042 41.5 0.046 37.6 0.050 34.7 0.054 32.2 0.058 30.0 0.067 25.3 0.078 19.5 0.090 11.9 0.101 3.5 0.114 -5.1 0.130 -13.2 0.149 -23.8 0.167 -36.4 0.185 -50.4 0.193 -64.4 0.204 -77.1 0.221 -91.0 0.230 -107.7 0.230 -122.4 MAG 0.979 0.954 0.933 0.916 0.902 0.873 0.836 0.748 0.704 0.672 0.649 0.631 0.619 0.606 0.614 0.621 0.622 0.625 0.624 0.625 0.622 0.606 0.575 0.522 0.488 0.434 0.368 K MAG1 (dB) 0.27 0.32 0.34 0.34 0.35 0.37 0.43 0.67 0.83 0.98 1.11 1.23 1.30 1.37 1.35 1.31 1.30 1.20 1.08 0.93 0.83 0.76 0.76 0.77 0.71 0.77 0.88 34.04 31.13 29.55 28.41 27.54 26.18 24.69 23.00 21.77 20.73 17.80 16.15 14.95 13.17 11.92 10.86 9.84 9.31 9.33 10.10 9.22 8.37 7.73 7.08 6.39 5.75 5.16 ANG -5.1 -9.1 -12.5 -15.5 -18.5 -23.9 -31.3 -41.2 -49.1 -55.9 -62.1 -68.0 -74.1 -87.3 -101.9 -114.5 -125.8 -138.3 -150.4 -165.1 178.1 162.0 146.0 127.4 106.8 79.8 52.7 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE661M04 ORDERING INFORMATION OUTLINE DIMENSIONS (Units in mm) PART NUMBER NE661M04-T2-A PACKAGE OUTLINE M04 2.05±0.1 1.25±0.1 +0.1 0.40-0.06 2 1.25 0.65 1 +0.1 0.30-0.05 (Leads 1, 3, 4) 0.59±0.05 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base T78 0.60 2.0 ±0.1 3 0.65 1.30 0.65 4 0.11 +0.1 -0.08 QUANTITY 3000 PACKAGING Tape & Reel NE661M04 NONLINEAR MODEL CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters IS 2.2e-18 MJC 0.33 CCB NE661M04 0.08e-12 BF 120 XCJC 1 CCE 0.1e-12 NF 1 CJS 0 LB 0.93e-9 VAF 39.7 VJS 0.75 LC 0.6e-9 IKF 0.21 MJS 0 LE 0.2e-9 ISE 4.64e-14 FC 0.5 CCBPKG 0.001e-12 NE 2.09 TF 2e-12 CCEPKG 0.25e-12 BR 10 XTF 20 CBEPK 0.2e-12 NR 1.004 VTF 10 LBX 0.2e-9 VAR 1.9 ITF 0.1 LCX 0.2e-9 PTF 200 LEX 0.05e-9 IKR 0.1 ISC 1.1e-11 TR 1e-11 NC 41 EG 1.11 RE 3.5 XTB 0 RB 14 XTI 3 RBM 14 KF 0 IRB 0.004 AF 1 RC 8 CJE 0.3e-12 VJE 0.5 MJE 0.33 CJC 0.001e-12 VJC 0.75 MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VCE = 0.5 V to 2.5 V, IC = 1 mA to 7 mA Date: 02/2002 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 01/03/2002 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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