NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M16 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm DESCRIPTION NEC's NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. M16 NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications. The NE662M16 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE DC SYMBOLS UNITS ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA hFE Forward Current Gain2 at VCE = 2 V, IC = 5 mA fT MSG |S21E|2 RF PARAMETERS AND CONDITIONS NE662M16 2SC5704 M16 NF P1dB Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz GHz MIN TYP 200 200 50 70 20 25 dB dB Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT dB 1.1 dBm 11 pF 0.14 IP3 Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz Cre Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz 100 20 Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz Output Power at 1 dB compression point at VCE = 2 V, IC = 20 mA, f = 2 GHz MAX 14 17 1.5 22 0.24 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MSG = S21 S12 NE662M16 VCBO Collector to Base Voltage V 15 VCEO Collector to Emitter Voltage V 3.3 VEBO Emitter to Base Voltage V 1.5 Collector Current mA 35 PT Total Power Dissipation mW 115 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 PACKAGE OUTLINE M16 1.0±0.05 0.8+0.07 -0.05 PART NUMBER NE662M16-T3-A QUANTITY 10 kpcs/reel PACKAGING Pin 1 (Collector), Pin 6 (Emitter) face the perforation side on the tape. 2 0.4 0.8 3 0.4 0.5±0.05 ORDERING INFORMATION zC Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 1.2+0.07 -0.05 1 IC OUTLINE DIMENSIONS (Units in mm) 0.15±0.05 RATINGS 0.125+0.1 -0.05 UNITS 6 PARAMETERS 5 SYMBOLS 4 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PIN CONNECTIONS 1. Collector 4. Base 2. Emitter 5. Emitter 3. Emitter 6. Emitter NE662M16 TYPICAL PERFORMANCE CURVES (TA = 25°C) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation, Ptot (mW) 300 Mounted on Glass Epoxy Board (1.08 cm2 × 1.0 mm (t) ) 250 200 150 115 100 50 25 0 50 75 100 125 Reverse Transfer Capacitance, Cre (pF) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.20 f = 1 MHz 0.16 0.12 0.08 0.04 0 150 2 4 6 Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 40 VCE = 2 V Collector Current, Ic (mA) 25 20 15 10 5 0 0.2 0.4 0.6 0.8 1.0 450 µA 30 400 µA 25 350 µA 300 µA 20 250 µA 15 200 µA 10 150 µA 5 100 µA 0 IB = 50 µA 4 3 1 2 Base to Emitter Voltage, VBE (V) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH vs. COLLECTOR CURRENT 1 000 30 VCE = 2 V VCE = 2 V f = 2 GHz Gain Bandwdth, fT (GHz) 100 10 0.1 500 µA 35 30 Collector Current, Ic (mA) 10 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 35 DC Current Gain, hFE 8 Collector to Base Voltage, VCB (V) 1 10 Collector Current, lC (mA) 100 25 20 15 10 5 0 1 10 Collector Current, IC (mA) 100 NE662M16 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. FREQUENCY 35 VCE = 1 V IC = 20 mA 25 20 15 10 5 0 0.1 30 25 20 15 10 5 0 0.1 10 1 VCE = 2 V IC = 20 mA 1 Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21eI2 (dB) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) 30 VCE = 2 V f = 1 GHz MSG 25 |S21e|2 20 15 10 5 0 1 10 100 VCE = 2 V f = 2 GHz 25 MSG |S21e|2 15 10 5 0 1 30 IC 0 -10 -25 -15 20 5 Input Power, Pin (dBm) 10 5 Output Power, Pout (dBm) Pout 30 Collector Current, Ic (mA) Output Power, Pout (dBm) 40 10 100 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 50 20 10 Collector Current, IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER VCE = 2 V, f = 1 GHz Icq = 20 mA (RF OFF) MAG 20 Collector Current, IC (mA) 30 10 Frequency, f (GHz) 50 VCE = 2 V, f = 2 GHz Icq = 20 mA (RF OFF) 20 40 Pout 10 IC 0 -10 -25 30 -15 5 Input Power, Pin (dBm) 20 10 5 Collector Current, Ic (mA) 30 Insertion Power Gain, IS21eI2 Insertion Power Gain, IS21eI2 35 NE662M16 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 20 3 15 2 10 NF 1 0 1 2 10 NF 5 0 100 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 VCE = 1 V f = 1.5 GHz 25 Ga 20 15 2 10 NF 0 1 6 5 Noise Figure, NF (dB) Noise Figure, NF (dB) 15 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 1 5 30 VCE = 2 V f = 1.5 GHz 25 Ga 4 20 3 15 2 10 NF 5 1 0 100 10 0 1 0 100 10 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 6 Noise Figure, NF (dB) 3 Collector Current, IC (mA) 3 30 VCE = 1 V f = 2 GHz 20 Ga 3 15 2 10 NF 1 10 Collector Current, IC (mA) 5 0 100 30 6 25 4 0 1 20 Collector Current, IC (mA) 4 5 25 4 0 1 0 100 10 Ga 1 5 6 5 Noise Figure, NF (dB) 4 VCE = 2 V f = 1 GHz 5 25 Ga 30 6 5 Noise Figure, NF (dB) Noise Figure, NF (dB) 5 30 VCE = 1 V f = 1 GHz VCE = 2 V f = 2 GHz 25 4 Ga 20 3 15 2 10 NF 1 0 1 10 Collector Current, IC (mA) 5 0 100 NE662M16 TYPICAL SCATTERING PARAMETERS (TA = 25°C) +90º j50 j100 j25 +45º +135º j10 0 25 10 50 5 100 +180º S21 10 +0º S21 S22 -j10 -45º -135º -j25 -j100 -90º -j50 NE662M16 VC = 2 V, IC = 5 mA FREQUENCY S11 GHz MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 0.79 0.79 0.78 0.76 0.74 0.73 0.71 0.69 0.68 0.66 0.65 0.64 0.64 0.63 0.62 0.61 0.60 0.60 0.59 0.58 0.58 0.57 0.57 0.56 0.56 0.55 0.55 0.54 0.54 0.53 0.52 0.52 0.52 0.52 0.51 0.51 0.51 0.51 0.51 0.51 S21 S12 S22 ANG MAG ANG MAG ANG MAG ANG -8.34 -20.52 -30.77 -39.87 -48.66 -56.79 -64.12 -71.30 -77.50 -83.36 -88.67 -93.70 -98.23 -102.48 -106.53 -110.24 -113.97 -117.60 -120.80 -124.09 -127.67 -130.76 -133.98 -136.85 -139.86 -142.72 -145.66 -148.25 -151.04 -153.76 -156.67 -159.41 -162.03 -164.80 -167.55 -170.15 -172.65 -174.91 -177.27 -179.59 13.52 13.20 12.77 12.28 11.75 11.15 10.59 10.02 9.48 8.98 8.55 8.15 7.79 7.45 7.14 6.82 6.57 6.36 6.11 5.86 5.69 5.51 5.37 5.16 5.03 4.88 4.75 4.58 4.46 4.35 4.21 4.09 4.00 3.89 3.78 3.68 3.61 3.51 3.40 3.31 171.32 165.06 158.29 152.12 146.29 140.96 136.12 131.99 128.20 124.77 121.61 118.55 115.75 113.15 110.70 108.22 105.79 103.81 102.01 99.85 97.73 95.62 94.20 92.25 90.06 88.26 86.62 84.94 82.99 81.42 79.85 78.16 76.53 75.17 73.64 71.91 70.42 69.29 67.93 66.28 0.01 0.02 0.02 0.03 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.09 0.09 84.69 78.92 73.38 68.92 64.34 60.23 56.71 53.36 50.48 47.89 45.67 43.73 42.02 40.50 39.06 37.77 36.69 35.72 34.87 34.09 33.33 32.59 32.26 31.81 31.21 30.84 30.55 30.18 30.00 29.61 29.45 29.21 28.97 28.78 28.67 28.50 28.28 28.15 28.08 27.96 0.98 0.96 0.93 0.90 0.87 0.83 0.79 0.76 0.72 0.69 0.66 0.64 0.61 0.59 0.57 0.55 0.53 0.51 0.50 0.48 0.47 0.46 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.36 0.35 0.34 0.33 0.32 0.32 0.31 0.30 0.29 -5.81 -11.66 -16.99 -21.91 -26.38 -30.37 -33.94 -37.10 -39.91 -42.40 -44.60 -46.56 -48.38 -49.89 -51.38 -52.58 -53.71 -54.81 -55.74 -56.51 -57.44 -57.89 -58.61 -59.18 -59.83 -60.32 -60.89 -61.28 -61.71 -62.28 -62.64 -63.08 -63.54 -64.05 -64.59 -65.11 -65.78 -66.41 -67.07 -67.74 K MAG1 0.13 0.09 0.11 0.14 0.17 0.20 0.24 0.26 0.29 0.32 0.35 0.38 0.40 0.43 0.46 0.49 0.52 0.55 0.58 0.61 0.64 0.66 0.68 0.71 0.74 0.77 0.80 0.83 0.87 0.90 0.93 0.96 0.99 1.02 1.05 1.07 1.09 1.12 1.16 1.19 32.18 29.17 27.36 26.09 25.11 24.28 23.60 22.99 22.47 21.99 21.59 21.22 20.88 20.57 20.28 19.99 19.74 19.54 19.31 19.06 18.89 18.68 18.53 18.31 18.17 17.98 17.83 17.63 17.50 17.34 17.17 17.02 16.88 15.94 15.28 14.77 14.44 14.02 13.59 13.22 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE662M16 TYPICAL SCATTERING PARAMETERS (TA = 25°C) +90º j50 j100 j25 +45º +135º j10 0 25 10 S11 50 100 5 10 15 20 +180º S22 +0º S21 -j10 -45º -135º -j100 -j25 -j50 -90º NE662M16 VC = 2 V, IC = 10 mA FREQUENCY S11 GHz MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 0.66 0.66 0.65 0.63 0.61 0.60 0.58 0.57 0.56 0.55 0.55 0.54 0.54 0.53 0.53 0.52 0.52 0.52 0.51 0.51 0.51 0.50 0.50 0.50 0.50 0.49 0.49 0.49 0.48 0.48 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 S21 S12 S22 ANG MAG ANG MAG ANG MAG ANG -12.81 -28.48 -41.93 -53.87 -64.70 -74.41 -82.86 -90.61 -97.18 -103.22 -108.53 -113.37 -117.69 -121.63 -125.35 -128.85 -132.25 -135.50 -138.46 -141.58 -144.72 -147.54 -150.41 -153.04 -155.65 -158.30 -160.91 -163.29 -165.82 -168.40 -171.02 -173.52 -175.90 -178.39 179.16 176.86 174.73 172.77 170.80 168.82 21.08 20.34 19.32 18.18 16.97 15.75 14.65 13.62 12.70 11.88 11.17 10.51 9.95 9.43 8.96 8.50 8.13 7.82 7.48 7.14 6.89 6.66 6.44 6.17 5.98 5.80 5.61 5.40 5.24 5.09 4.93 4.78 4.66 4.53 4.39 4.27 4.18 4.06 3.93 3.83 170.08 161.46 153.18 145.93 139.38 133.63 128.64 124.38 120.59 117.23 114.18 111.31 108.65 106.24 103.96 101.70 99.47 97.63 96.05 94.06 92.12 90.21 88.94 87.15 85.19 83.57 82.16 80.62 78.93 77.50 76.12 74.60 73.12 71.93 70.55 69.00 67.66 66.70 65.49 63.99 0.01 0.01 0.02 0.03 0.03 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 81.45 76.90 70.56 65.20 60.63 56.67 53.54 50.71 48.39 46.60 45.17 43.92 42.92 42.14 41.39 40.83 40.51 40.23 39.88 39.77 39.58 39.38 39.49 39.53 39.40 39.29 39.33 39.31 39.52 39.41 39.56 39.47 39.46 39.49 39.50 39.45 39.36 39.24 39.22 39.15 0.96 0.94 0.90 0.85 0.80 0.75 0.70 0.66 0.62 0.58 0.55 0.52 0.50 0.47 0.45 0.43 0.42 0.40 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.27 0.26 0.25 0.24 0.24 0.23 0.22 0.22 0.21 0.20 -7.79 -15.60 -22.67 -28.92 -34.46 -39.19 -43.27 -46.77 -49.77 -52.36 -54.59 -56.54 -58.27 -59.73 -61.06 -62.21 -63.19 -64.16 -64.99 -65.63 -66.43 -66.83 -67.39 -67.86 -68.39 -68.81 -69.31 -69.61 -70.04 -70.48 -70.87 -71.30 -71.76 -72.30 -72.89 -73.50 -74.30 -75.12 -75.94 -76.91 K MAG1 0.19 0.13 0.16 0.20 0.24 0.28 0.33 0.37 0.41 0.45 0.49 0.52 0.56 0.59 0.63 0.66 0.70 0.73 0.76 0.80 0.82 0.84 0.87 0.90 0.93 0.95 0.98 1.01 1.04 1.06 1.09 1.11 1.13 1.15 1.17 1.19 1.21 1.23 1.25 1.27 34.48 31.43 29.60 28.32 27.29 26.47 25.76 25.14 24.59 24.11 23.68 23.28 22.91 22.57 22.24 21.92 21.65 21.39 21.12 20.83 20.62 20.38 20.17 19.91 19.72 19.50 19.29 18.53 17.69 17.14 16.67 16.22 15.88 15.52 15.17 14.85 14.60 14.28 13.93 13.64 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE662M16 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 +90º j100 j25 +45º +135º j10 0 25 10 50 100 5 10 15 20 25 +180º S11 S11 +0º S22 -j10 -45º -135º -j25 -j100 -j50 -90º NE662M16 VC = 2 V, IC = 20 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.100 3.200 3.300 3.400 3.500 3.600 3.700 3.800 3.900 4.000 S21 S11 MAG 0.51 0.51 0.51 0.51 0.50 0.50 0.49 0.49 0.49 0.49 0.48 0.48 0.48 0.48 0.48 0.48 0.48 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.47 0.46 0.46 0.46 0.46 0.45 0.45 0.45 0.45 0.45 0.45 0.46 0.46 0.46 0.46 0.46 ANG -19.24 -39.58 -56.67 -71.47 -83.85 -94.44 -103.20 -110.77 -117.07 -122.58 -127.34 -131.56 -135.30 -138.62 -141.83 -144.87 -147.80 -150.55 -153.08 -155.81 -158.52 -161.02 -163.41 -165.69 -167.97 -170.37 -172.58 -174.73 -177.01 -179.36 178.28 176.08 173.87 171.68 169.53 167.47 165.67 163.96 162.28 160.56 MAG 28.64 27.18 25.27 23.19 21.13 19.22 17.57 16.11 14.85 13.76 12.83 11.98 11.27 10.62 10.04 9.49 9.04 8.66 8.25 7.86 7.56 7.29 7.03 6.72 6.50 6.29 6.07 5.84 5.65 5.49 5.31 5.14 5.00 4.86 4.71 4.58 4.47 4.34 4.21 4.09 S12 ANG 168.38 157.71 148.17 140.08 133.18 127.33 122.40 118.27 114.65 111.47 108.63 105.97 103.49 101.28 99.19 97.12 95.06 93.37 91.95 90.10 88.29 86.54 85.38 83.75 81.93 80.42 79.19 77.76 76.22 74.88 73.63 72.22 70.83 69.75 68.47 67.03 65.80 64.93 63.80 62.37 MAG 0.01 0.01 0.02 0.02 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 S22 ANG MAG 79.10 74.03 67.79 62.44 58.17 54.93 52.50 50.56 49.13 48.10 47.35 46.96 46.65 46.44 46.48 46.28 46.44 46.55 46.81 46.88 46.96 47.15 47.44 47.56 47.55 47.65 47.79 47.81 47.96 47.89 48.00 47.97 47.81 47.81 47.78 47.68 47.46 47.30 47.24 46.96 0.94 0.90 0.85 0.79 0.72 0.66 0.61 0.56 0.52 0.49 0.46 0.43 0.41 0.39 0.37 0.35 0.33 0.32 0.31 0.29 0.28 0.27 0.26 0.26 0.25 0.24 0.23 0.22 0.21 0.21 0.20 0.19 0.19 0.18 0.18 0.17 0.16 0.16 0.15 0.15 K ANG -9.68 -19.55 -28.23 -35.68 -41.91 -47.08 -51.40 -55.03 -58.07 -60.66 -62.85 -64.73 -66.43 -67.82 -69.05 -70.13 -71.09 -71.97 -72.73 -73.33 -74.04 -74.48 -74.96 -75.41 -75.93 -76.35 -76.85 -77.18 -77.67 -78.08 -78.62 -79.11 -79.69 -80.42 -81.20 -82.06 -83.19 -84.30 -85.66 -87.01 MAG1 (dB) 0.26 0.20 0.23 0.28 0.33 0.39 0.44 0.49 0.54 0.59 0.64 0.68 0.72 0.75 0.79 0.83 0.86 0.89 0.92 0.95 0.97 0.99 1.01 1.04 1.06 1.07 1.09 1.12 1.14 1.16 1.17 1.19 1.20 1.22 1.23 1.24 1.25 1.27 1.29 1.30 36.13 33.13 31.27 29.98 28.93 28.06 27.33 26.69 26.11 25.60 25.12 24.67 24.27 23.88 23.50 23.14 22.81 22.51 22.19 21.87 21.60 21.33 20.46 19.60 19.05 18.61 18.15 17.64 17.23 16.88 16.51 16.16 15.87 15.56 15.26 14.97 14.74 14.44 14.12 13.86 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 3-46 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE662M16 NE662M16 NONLINEAR MODEL SCHEMATIC CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 IS 1.6e-16 MJC 0.3 BF 105 XCJC 0.1 NF 1.02 CJS 0 0.75 VAF 23 VJS IKF 0.38 MJS 0 ISE 1e-6 FC 0.6 NE 30 TF 2e-12 CCB 0.07e-12 BR 12 XTF 0.2 CCE 0.09e-12 NR 1.02 VTF 0.2 LB 0.4e-9 VAR 2.5 ITF 0.03 LE 0.14e-9 IKR 0.1 PTF 0 CCEPKG 0.12e-12 ISC 3e-15 TR 1e-11 CBEPK 0.1e-12 NC 1.28 EG 1.11 LBX 0.1e-9 RE 1.1 XTB 0 LCX 0.6e-9 RB 6 XTI 3 LEX 0.04e-9 RBM 3.5 KF 0 IRB 1.3e-3 AF 1 RC 8.75 CJE 0.4e-12 VJE 0.6 MJE 0.5 CJC 0.1e-12 VJC 0.75 ADDITIONAL PARAMETERS Parameters NE662M16 MODEL RANGE Frequency: 0.1 to 4 GHz Bias: VCE = 0.5 V to 3 V, IC = 1 mA to 30 mA Date: 01/15/2002 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 01/22/2002 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability. 3-48