CEL UPC3232TB-E3-A

BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC3232TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.
This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
• Low current
: ICC = 26.0 mA TYP.
• Medium output power
: PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz
: PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz
• High linearity
: PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz
: PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz
• Power gain
: GP = 32.8 dB MIN. @ f = 1.0 GHz
: GP = 33.5 dB MIN. @ f = 2.2 GHz
• Gain flatness
: ∆GP = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz
• Noise figure
: NF = 4 dB TYP. @ f = 1.0 GHz
: NF = 4.1 dB TYP. @ f = 2.2 GHz
• Supply voltage
: VCC = 4.5 to 5.5 V
• Port impedance
: input/output 50 Ω
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
µPC3232TB-E3
Order Number
Package
µPC3232TB-E3-A 6-pin super minimold
(Pb-Free)
Marking
C3S
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark
To order evaluation samples, please contact your nearby sales office
Part number for sample order: µPC3232TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10597EJ01V0DS (1st edition)
Date Published May 2006 NS CP(K)
µPC3232TB
PIN CONNECTIONS
(Top View)
C3S
3
(Top View)
2
1
(Bottom View)
4 3
4 4
3
5 2
5 5
2
6 1
6 6
1
Pin No.
Pin Name
1
OUTPUT
2
GND
3
VCC
4
INPUT
5
GND
6
GND
PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
(TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
PO (sat)
GP
NF
ICC
(dBm)
(dB)
(dB)
(mA)
µPC2708TB
+10.0
15.0
6.5
26
µPC2709TB
+11.5
23.0
5.0
25
C1E
µPC2710TB
+13.5
33.0
3.5
22
C1F
µPC2776TB
+8.5
23.0
6.0
25
C2L
µPC3223TB
+12.0
23.0
4.5
19
C3J
24.5
C3M
Part No.
µPC3225TB
+15.5
Note
32.5
Note
3.7
Note
Package
Marking
6-pin super minimold
C1D
µPC3226TB
+13.0
25.0
5.3
15.5
C3N
µPC3232TB
+15.5
32.8
4.0
26
C3S
Note µPC3225TB is f = 0.95 GHz
Remark
2
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Data Sheet PU10597EJ01V0DS
µPC3232TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25°C
6.0
V
Total Circuit Current
ICC
TA = +25°C
45
mA
Power Dissipation
PD
TA = +85°C
270
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
0
dBm
Note
TA = +25°C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Operating Ambient Temperature
TA
−40
+25
+85
°C
Data Sheet PU10597EJ01V0DS
3
µPC3232TB
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
ICC
No input signal
20
26
32
mA
Power Gain 1
GP1
f = 0.25 GHz, Pin = −35 dBm
29
31.5
34
dB
Power Gain 2
GP2
f = 1.0 GHz, Pin = −35 dBm
30
32.8
35.5
Power Gain 3
GP3
f = 1.8 GHz, Pin = −35 dBm
31
33.8
37
Power Gain 4
GP4
f = 2.2 GHz, Pin = −35 dBm
30.5
33.5
36.5
Power Gain 5
GP5
f = 2.6 GHz, Pin = −35 dBm
29
32.2
35.5
Power Gain 6
GP6
f = 3.0 GHz, Pin = −35 dBm
27
30.7
34
Gain Flatness
∆GP
f = 1.0 to 2.2 GHz, Pin = −35 dBm
−
1.0
−
dB
K factor 1
K1
f = 1.0 GHz, Pin = −35 dBm
−
1.3
−
−
K factor 2
K2
f = 2.2 GHz, Pin = −35 dBm
−
1.9
−
−
dBm
Saturated Output Power 1
PO (sat) 1
f = 1.0 GHz, Pin = 0 dBm
+13
+15.5
−
Saturated Output Power 2
PO (sat) 2
f = 2.2 GHz, Pin = −5 dBm
+9.5
+12
−
Gain 1 dB Compression Output Power 1
PO (1 dB) 1
f = 1.0 GHz
+8
+11
−
Gain 1 dB Compression Output Power 2
PO (1 dB) 2
f = 2.2 GHz
+6
+8.5
−
Noise Figure 1
NF1
f = 1.0 GHz
−
4
4.8
Noise Figure 2
NF2
f = 2.2 GHz
−
4.1
4.9
Isolation 1
ISL1
f = 1.0 GHz, Pin = −35 dBm
36
41
−
Isolation 2
ISL2
f = 2.2 GHz, Pin = −35 dBm
38
45
−
Input Return Loss 1
RLin1
f = 1.0 GHz, Pin = −35 dBm
9.5
13
−
Input Return Loss 2
RLin2
f = 2.2 GHz, Pin = −35 dBm
10
14.5
−
Output Return Loss 1
RLout1
f = 1.0 GHz, Pin = −35 dBm
12
15.5
−
Output Return Loss 2
RLout2
f = 2.2 GHz, Pin = −35 dBm
12
15
−
Input 3rd Order Distortion Intercept Point 1
IIP31
f1 = 1 000 MHz, f2 = 1 001 MHz
−
−9
−
Input 3rd Order Distortion Intercept Point 2
IIP32
f1 = 2 200 MHz, f2 = 2 201 MHz
−
−15.5
−
Output 3rd Order Distortion Intercept Point 1
OIP31
f1 = 1 000 MHz, f2 = 1 001 MHz
−
+23.5
−
Output 3rd Order Distortion Intercept Point 2
OIP32
f1 = 2 200 MHz, f2 = 2 201 MHz
−
+18
−
f1 = 1 000 MHz, f2 = 1 001 MHz,
−
50
−
dBc
−
70
−
dBc
2nd Order Intermodulation Distortion
IM2
dBm
dB
dB
dB
dB
dBm
dBm
Pout = −5 dBm/tone
2nd Harmonic
4
2f0
f0 = 1.0 GHz, Pout = −15 dBm
Data Sheet PU10597EJ01V0DS
µPC3232TB
TEST CIRCUIT
C6
Feed-through capacitor
1 000 pF
L2
68 nH
VCC
C4
1 000 pF
C3
1 000 pF
L1
C1
100 pF
IN
3
47 nH
R1
560 Ω
C5
39 pF
4
1
OUT
l1
2, 5, 6
GND
l2
C2
33 pF
Length of microstrip line : l1 = 2.25 mm
l2 = 2.75 mm
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Type
Value
R1
Chip Resistance
560 Ω
L1
Chip Inductor
47 nH
L2
Chip Inductor
68 nH
C1
Chip Capacitor
100 pF
C2
Chip Capacitor
33 pF
C3, C4
Chip Capacitor
1 000 pF
C5
Chip Capacitor
39 pF
C6
Feed-through Capacitor
1 000 pF
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect
an inductor between the VCC pin (pin 3) and output pin (pin 1). Select inductance, as the value listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable (Refer to the following page).
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for
the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).
Data Sheet PU10597EJ01V0DS
5
µPC3232TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
2.25 mm 2.75 mm
C2
L1 R1
C1
C3
C4
C5
C6: Feed-through Capacitor
COMPONENT LIST
Notes
Value
Size
R1
560 Ω
1005
L1
47 nH
1005
2.
Back side: GND pattern
L2
68 nH
1005
3.
Au plated on pattern
C1
100 pF
1608
4.
: Through holes
5.
L1, L2: FDK’s products
C2
1.
33 pF
1608
1 000 pF
1005
C5
39 pF
1608
C6
1 000 pF
C3, C4
19 × 21.46 × 0.51 mm double sided copper clad RO4003C
(Rogers) board.
Feed-through
Capacitor
6
Data Sheet PU10597EJ01V0DS
µPC3232TB
TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified)
CURCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
35
30
No Input Signal
29
25
20
TA = +85˚C
15
+25˚C
10
27
26
25
24
23
22
5
21
–40˚C
0
0
1
2
3
4
No Input Signal
28
Circuit Current ICC (mA)
Circuit Current ICC (mA)
30
5
20
–50
6
Supply Voltage VCC (V)
–25
0
25
50
75
100
Operating Ambient Temperature TA (°C)
ISOLATION vs. FREQUENCY
POWER GAIN vs. FREQUENCY
40
1: –40.01 dB
0.25 GHz
2: –41.32 dB
1 GHz
3: –46.39 dB
2.2 GHz
4: –48.59 dB
2.6 GHz
VCC = 5.5 V
20
5.0 V
35
1
30
2
3
4
4.5 V
1: 31.56 dB
0.25 GHz
2: 32.71 dB
1 GHz
3: 33.37 dB
2.2 GHz
4: 32.14 dB
2.6 GHz
25
20
Isolation ISL (dB)
Power Gain GP (dB)
40
0
–20
VCC = 4.5 to 5.5 V
1
–40
2
3
4
–60
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1
Frequency f (GHz)
INPUT RETURN LOSS vs. FREQUENCY
OUTPUT RETURN LOSS vs. FREQUENCY
1: –12.35 dB
0.25 GHz
2: –12.47 dB
1 GHz
3: –13.77 dB
2.2 GHz
4: –14.45 dB
2.6 GHz
Input Return Loss RLin (dB)
20
10
0
VCC = 4.5 V
5.0 V
–10 1
5.5 V
3
4
1: –14.38 dB
0.25 GHz
2: –15.52 dB
1 GHz
3: –14.84 dB
2.2 GHz
4: –16.50 dB
2.6 GHz
20
10
0
VCC = 5.5 V
–10
2
–20
Output Return Loss RLout (dB)
Frequency f (GHz)
–20
5.0 V
1
2
4.5 V
3
4
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1
0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10597EJ01V0DS
7
µPC3232TB
OUTPUT POWER vs. INPUT POWER
20
OUTPUT POWER vs. INPUT POWER
20
VCC = 5.5 V
f = 1.0 GHz
f = 2.2 GHz
10
5.0 V
4.5 V
5
0
–5
–10
–15
10
5.0 V
5
4.5 V
0
–5
–10
–15
–20
–50
–40
–30
–20
–10
–20
–50
0
–40
Input Power Pin (dBm)
6.5
6.5
6.0
6.0
5.5
VCC = 4.5 V
4.5
4.0
5.0 V
3.5
5.5 V
3.0
0.5
1.0
1.5
2.0
–10
0
TA = +85˚C
+25˚C
5.5
5.0
4.5
4.0
3.5
3.0
–40˚C
2.5
2.5
2.5
3.0
2.0
0.0
Frequency f (GHz)
0.5
1.0
1.5
2.0
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
8
–20
NOISE FIGURE vs. FREQUENCY
7.0
Noise Figure NF (dB)
Noise Figure NF (dB)
NOISE FIGURE vs. FREQUENCY
5.0
–30
Input Power Pin (dBm)
7.0
2.0
0.0
VCC = 5.5 V
15
Output Power Pout (dBm)
Output Power Pout (dBm)
15
Data Sheet PU10597EJ01V0DS
2.5
3.0
30
f1 = 1 000 MHz
20 f2 = 1 001 MHz
10
Pout
0
–10
–20
–30
IM3
–40
–50
–60
–70
–45 –40 –35
–30
–25
–20 –15 –10
–5
Output Power Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
30
20
f1 = 2 200 MHz
f2 = 2 201 MHz
10
Pout
0
–10
–20
–30
IM3
–40
–50
–60
–70
–45 –40 –35
–30
–25
–20 –15 –10
Input Power Pin (dBm)
OUTPUT POWER, IM2 vs. INPUT POWER
IM2 vs. INPUT POWER
20
f1 = 1 000 MHz
10 f2 = 1 001 MHz
Pout
0
–10
–20
IM2
–30
–40
–50
–60
–70
–50
–40
–30
–20
–10
0
10
VCC = 5.5 V
50
40
f1 = 1 000 MHz
f2 = 1 001 MHz
5.0 V
30
4.5 V
20
10
0
–50
–45
–40
–35
–30
–25
–20
Input Power Pin (dBm)
OUTPUT POWER, 2ND HARMONIC,
3RD HARMONIC vs. INPUT POWER
OUTPUT POWER, 2ND HARMONIC,
3RD HARMONIC vs. INPUT POWER
20
f = 1 000 MHz
10
0
2f0
Pout
–10
Output Power Pout (dBm)
2nd Harmonic 2f0 (dBc)
3rd Harmonic 3f0 (dBc)
10
60
–5
Input Power Pin (dBm)
20
Output Power Pout (dBm)
2nd Harmonic 2f0 (dBc)
3rd Harmonic 3f0 (dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power Pin (dBm)
2nd Order Intermodulation Distortion IM2 (dBc)
Output Power Pout (dBm)
2nd Order Intemodulation Distortion IM2 (dBm)
Output Power Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
µPC3232TB
–20
–30
3f0
–40
–50
–60
–70
–80
–90
–60
f = 2 200 MHz
0
2f0
Pout
–10
–20
–30
–40
–50
3f0
–60
–70
–80
–50
–40
–30
–20
–10
0
–90
–60
–50
–40
–30
–20
–10
0
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10597EJ01V0DS
9
µPC3232TB
S-PARAMETERS (TA = +25°C, VDD = VCC = 5.0 V, Pin = −35 dBm)
S11−FREQUENCY
1 : 81.254 Ω
–9.457 Ω
67.317 pF
250 MHz
2 : 46.533 Ω
–23.434 Ω
1 GHz
3 : 35.576 Ω
10.355 Ω
2.2 GHz
4 : 45.572 Ω
17.93 Ω
2.6 GHz
4
3
1
2
START :
100.000 000 MHz
STOP
: 3 100.000 000 MHz
S22−FREQUENCY
1 : 44.955 Ω
17.123 Ω
10.901 nH
250 MHz
2 : 48.875 Ω
–16.785 Ω
1 GHz
3 : 51.383 Ω
18.615 Ω
2.2 GHz
4 : 66.562 Ω
5.5 Ω
2.6 GHz
1
3
4
2
START :
10
100.000 000 MHz
STOP
Data Sheet PU10597EJ01V0DS
: 3 100.000 000 MHz
µPC3232TB
S-PARAMETERS
S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a
microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/microwave/index.html
Data Sheet PU10597EJ01V0DS
11
µPC3232TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
12
Data Sheet PU10597EJ01V0DS
0.15+0.1
–0.05
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
µPC3232TB
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to the VCC line.
(4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input and output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10597EJ01V0DS
13
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.