CEL UPG2250T5N-E2

GaAs INTEGRATED CIRCUIT
µPG2250T5N
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
DESCRIPTION
The µPG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1.
This device realizes high efficiency, high gain and high output power.
This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able
to high-density surface mounting.
FEATURES
• Operating frequency
: fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)
• Supply voltage
: VDD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.)
• Control voltage
: Vcont = 1.5 to 2.1 V (1.8 V TYP.)
• Circuit current
: IDD = 100 mA TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm
• Output power
: Pout = +20.0 dBm TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm
• Gain control range
: GCR = 60 dB TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = −5 dBm
• High efficiency
: PAE = 55% TYP. @ VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = −5 dBm
• High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)
APPLICATION
• Power Amplifier for Bluetooth Class 1
ORDERING INFORMATION
Part Number
Order Number
µPG2250T5N-E2
µPG2250T5N-E2-A
Package
6-pin plastic TSON
(Pb-Free)
Marking
G5C
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2250T5N-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10639EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)
2006
µPG2250T5N
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
2
G5C
1
3
(Bottom View)
(Top View)
6
1
6
6
1
5
2
5
5
2
4
3
4
Bias Circuit
3
4
Pin No.
Pin Name
1
OUTPUT/VDD3
2
N.C.
3
Vcont
4
INPUT
5
VDD1
6
VDD2
Remark Exposed pad : GND
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Supply Voltage
VDD1, 2, 3
5.0
V
Control Voltage
Vcont
2.4
V
Circuit Current
IDD
250
mA
Control Current
Icont
5
mA
Input Power
Pin
+5
400
dBm
Note
Power Dissipation
PD
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
fopt
2 400
2 450
2 500
MHz
Supply Voltage
VDD1, 2, 3
1.5
1.8
3.5
V
Control Voltage
Vcont
1.5
1.8
2.1
V
Operating Frequency
2
Data Sheet PG10639EJ01V0DS
µPG2250T5N
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD1, 2, 3 = 1.8 V, f = 2 450 MHz, Pout = +19 dBm, external input and output matching,
unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
IDD
Vcont = 1.8 V, Pout = +19 dBm
−
100
130
mA
Control Current
Icont
Vcont = 1.8 V, Pout = +19 dBm
−
−
3
mA
Vcont = 0 V, RF None
−
−
5
µA
+19.0
+20.0
−
dBm
Shut Down Current
Ishut down
Output Power 1
Pout1
Vcont = 1.8 V, Pin = −5 dBm
Output Power 2
Pout2
Vcont = 0 V, Pin = −5 dBm
−
−40.0
−
dBm
Gain Control Range
GCR
Vcont = 0 to 1.8 V, Pin = −5 dBm
−
60
−
dB
Efficiency
PAE
Vcont = 1.8 V, Pin = −5 dBm
−
55
−
%
2f0
Vcont = 1.8 V, Pin = −5 dBm
−
35
−
dBc
2nd Harmonics
Data Sheet PG10639EJ01V0DS
3
µPG2250T5N
EVALUATION CIRCUIT
VDD3
0.1 µF
12 nH
10 pF
6
1
OUTPUT
VDD2
0.1 µF
1.5 pF
2.2 nH
5
2
VDD1
1 000 pF
3
Vcont
0.1 µF
Bias Circuit
4
0.1 µF
INPUT
5.6 nH
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10639EJ01V0DS
µPG2250T5N
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Condition : f = 2 450 MHz, VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, with external input and output matching circuits
140
Output Power Pout (dBm), Gain (dB)
35
30
IDD
Gain
120
100
25
20
80
Pout
60
15
PAE
10
40
20
5
0
–30
–20
–25
–15
–10
–5
0
0
5
Circuit Current IDD (mA), Efficiency PAE (%)
OUTPUT POWER, GAIN, CIRCUIT CURRENT,
EFFICIENCY vs. INPUT POWER
Input Power Pin (dBm)
Condition : f = 2 450 MHz, VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, Pin = −5 dBm, with external input and output matching
circuits
30
140
Pout
Output Power Pout (dBm)
20
120
10
100
IDD
0
80
–10
60
PAE
–20
40
–30
20
–40
0
0.5
1
1.5
2
2.5
0
3
Circuit Current IDD (mA), Efficiency PAE (%)
OUTPUT POWER, CIRCUIT CURRENT,
EFFICIENCY vs. CONTROL VOLTAGE
Control Voltage Vcont (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10639EJ01V0DS
5
µPG2250T5N
Condition : f = 2 450 MHz, VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, with external input and output matching circuits
2ND HARMONICS vs. OUTPUT POWER
0
2nd Harmonics 2f0 (dBc)
–10
–20
–30
–40
–50
–60
–70
5
10
15
20
25
Output Power Pout (dBm)
Condition : VDD1 = VDD2 = VDD3 = Vcont = 1.8 V, with external input and output matching circuits
S11-FREQUENCY
S11, S22-FREQUENCY
0
–10
–20
–30
–40
m1
m5
–50
–60
–70
START 100.0 MHz
m1: f = 2.450 GHz
S (1,1) = 0.207/–115.086
impedance = Z0 * (0.786 – j0.307)
STOP 5.100 GHz
–80
–90
m5: f = 2.450 GHz
dB (S (1,2)) = –54.402
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Frequency f (GHz)
S21-FREQUENCY
S22-FREQUENCY
40
m3
30
20
10
0
m7
–10
–20
–30
–40
m3: f = 2.450 GHz
dB (S (2,1)) = 30.921
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
START 100.0 MHz
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PG10639EJ01V0DS
m7: f = 2.450 GHz
S (2,2) = 0.486/–164.104
impedance = Z0 * (0.352 – j0.123)
STOP 5.100 GHz
µPG2250T5N
MOUNTING PAD AND SOLDER MASK LAYOUT DIMENSIONS
6-PIN PLASTIC TSON (UNIT: mm)
MOUNTING PAD
0.3
0.2
0.5
1.0
0.5
0.3
0.5
0.3
0.3
SOLDER MASK
0.475
0.15
0.5
0.55
0.5
0.25
0.35
0.475
0.25
Solder thickness : 0.08 mm
Remark The mounting pad and solder mask layouts in this document are for reference only.
Data Sheet PG10639EJ01V0DS
7
µPG2250T5N
PACKAGE DIMENSIONS
6-PIN PLASTIC TSON (UNIT: mm)
(Bottom View)
(Side View)
0.3±0.07
0.2+0.07
–0.05
1.5±0.1
0.5±0.06
1.5±0.1
1.2±0.1
(Top View)
0.37+0.03
–0.05
8
0.2±0.1
Data Sheet PG10639EJ01V0DS
0.7±0.1
µPG2250T5N
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10639EJ01V0DS
9
µPG2250T5N
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
• The information in this document is current as of September, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
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M8E 02. 11-1
10
Data Sheet PG10639EJ01V0DS
µPG2250T5N
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected]
Hong Kong Head Office TEL: +852-3107-7303
FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
TEL: +82-2-558-2120
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH
http://www.eu.necel.com/
TEL: +49-211-6503-0
FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500
FAX: +1-408-988-0279
Compound Semiconductor Devices Division
NEC Electronics Corporation
URL: http://www.ncsd.necel.com/
0604
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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