PN4258 MMBT4258 C E C B TO-92 SOT-23 E B Mark: 78 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 12 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 12 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation Max Units PN4258 350 2.8 125 *MMBT4258 225 1.8 357 556 mW mW/°C °C/W °C/W PN4258 / MMBT4258 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage* I C = 100 µA, VBE = 0 12 V VCEO(sus) Collector-Emitter Sustaining Voltage* I C = 3.0 mA, IB = 0 12 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 12 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 µA, IC = 0 4.5 V ICES Collector Cutoff Current VCE = 6.0 V, VBE = 0 VCE = 6.0 V, VBE = 0, TA = 65°C 0.01 5.0 µA µA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage I C = 1.0 mA, VCE = 0.5 V I C = 10 mA, VCE = 3.0 V I C = 50 mA, VCE = 1.0 V I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA 15 30 30 0.75 120 0.15 0.5 0.95 1.5 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cibo Input Capacitance Ccb Collector-Base Capacitance I C = 10 mA, VCE = 5.0 V, f = 100 MHz I C = 10 mA, VCE = 10 V, f = 100 MHz VBE = 0.5 V, IC = 0, f = 1.0 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz 700 MHz 700 MHz 3.5 pF 3.0 pF SWITCHING CHARACTERISTICS ton Turn-On Time VCC = 1.5 V, VBE(off) = 0 V, 15 ns td Delay Time I C = 10 mA, IB1 = 1.0 mA 10 ns tr Rise Time 15 ns toff Turn-Off Time VCC = 1.5 V, IC = 10mA 20 ns ts Storage Time I B1 = IB2 = 1.0 mA 20 ns tf Fall Time 10 ns ts Storage Time 20 ns I C = 10 mA, IB1 = IB2 = 10 mA *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model PNP (Is=545.6E-18 Xti=3 Eg=1.11 Vaf=100 Bf=61.42 Ne=1.5 Ise=0 Ikf=50m Xtb=1.5 Br=1.426 Nc=2 Isc=0 Ikr=0 Rc=3.75 Cjc=2.77p Mjc=.1416 Vjc=.75 Fc=.5 Cje=2.65p Mje=.3083 Vje=.75 Tr=4.109n Tf=118.5p Itf=.5 Vtf=3 Xtf=6 Rb=10) PN4258 / MMBT4258 PNP Switching Transistor (continued) 200 150 100 50 VCESAT- COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Vce = 1V 125 °C 25 °C - 40 °C 0 0.1 0.2 0.5 1 2 5 10 20 50 100 I C - COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 0.8 - 40 ºC 125 ºC 25 °C 0.6 0.4 0.2 1 10 I C - COLLECTOR CURRENT (mA) 0.5 β = 10 0.4 0.3 25 °C 0.2 125 ºC 0.1 100 - 40 ºC 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 1 0.8 - 40 ºC 25 °C 125 ºC 0.6 0.4 VCE = 1V 0.2 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 65 Collector-Cutoff Current vs. Ambient Temperature 100 V = 10V CB 10 1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) P6 100 Base Emitter ON Voltage vs Collector Current P6 ICBO- COLLECTOR CURRENT (nA) 0 0.1 Collector-Emitter Saturation Voltage vs Collector Current VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT - BASE EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN DC Typical Characteristics 125 25 PN4258 / MMBT4258 PNP Switching Transistor (continued) AC Typical Characteristics Input / Output Capacitance vs. Reverse Bias Voltage Switching Times vs. Collector Current Delay Time vs. Turn On Base Current / Reverse Emitter Voltage Contours of Constant Gain Bandwidth Product (fT) Switching Times vs. Ambient Temperature Rise Time vs. Collector and Turn On Base Currents PN4258 / MMBT4258 PNP Switching Transistor (continued) AC Typical Characteristics (continued) Storage Time vs. Turn On / Turn Off Base Currents Storage Time vs. Turn On / Turn Off Base Currents Storage Time vs. Turn On / Turn Off Base Currents Fall Time vs. Turn On / Turn Off Base Currents Fall Time vs. Turn On / Turn Off Base Currents Fall Time vs. Turn On / Turn Off Base Currents PN4258 / MMBT4258 PNP Switching Transistor (continued) AC Typical Characteristics (continued) PD - POWER DISSIPATION (mW) POWER DISSIPATION vs AMBIENT TEMPERATURE 350 300 250 TO-92 200 SOT-23 150 100 50 0 0 25 50 75 100 TEMPERATURE ( ° C) 125 150 Test Circuit VBB VBB = -1.5 V 2.2 KΩ Ω 0.1 µF VIN PW = 240 ns Z IN = 50 Ω tr ≤ 1.0 ns 130 Ω 5.0 KΩ Ω To Sampling Scope Z IN ≥ 100 kΩ tr < 1.0 ns 51 Ω tON tOFF VBB = ground VBB = - 8.0 V VIN = - 5.8 V VIN = 9.8 V I = 10 mA, I = 1.0 mA, I = 1.0 mA C B1 B2 FIGURE 1: tON, tOFF Test Circuit PN4258 / MMBT4258 PNP Switching Transistor