FUJITSU FLC257MH-8

FLC257MH-8
C-Band Power GaAs FET
FEATURES
•
•
•
•
•
High Output Power: P1dB = 34.0dBm(Typ.)
High Gain: G1dB = 8.0dB(Typ.)
High PAE: ηadd = 35%(Typ.)
ProvenReliability
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC257MH-8 is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
15
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
1000 1500
mA
Test Conditions
Transconductance
gm
VDS = 5V, IDS =600mA
-
500
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS =50mA
-1.0
-2.0
-3.5
V
-5
-
-
V
32.5
34.0
-
dBm
7.0
8.0
-
dB
-
35
-
%
-
8
10
°C/W
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Power-added Efficiency
ηadd
Thermal Resistance
Rth
IGS = -50µA
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 8.5 GHz
Channel to Case
CASE STYLE: MH
Edition 1.1
July 1999
G.C.P.: Gain Compression Point
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FLC257MH-8
C-Band Power GaAs FET
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
Drain Current (mA)
Total Power Dissipation (W)
POWER DERATING CURVE
1000
16
12
8
4
VGS =0V
750
-0.5V
-1.0V
500
-1.5V
250
-2.0V
0
0
50 100 150 200
2
4
6
8
10
Drain-Source Voltage (V)
Case Temperature (°C)
VDS=10V
29 f1 = 8.5 GHz
f = 8.51GHz
27 2
-10
25
-20
2-tone Test
Pout
-30
23
IM3
21
-40
IM3 (dBc)
Output Power (S.C.L.) (dBm)
OUTPUT POWER
& IM3 vs. INPUT POWER
-50
19
12 14 16 18 20
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
P1dB & ηadd vs. VDS
OUTPUT POWER vs. INPUT POWER
f=8.5 GHz
IDS ≈ 0.6 IDSS
25
Pout
50
40
30
ηadd
23
20
50
35
P1dB
34
ηadd
30
33
10
17 19 21 23 25 27
8
Input Power (dBm)
9
10
Drain-Source Voltage (V)
2
40
ηadd (%)
f = 8.5 GHz
P1dB (dBm)
33
31
29
27
ηadd (%)
Output Power (dBm)
VDS = +10V
35 IDS ≈ 0.6 IDSS
FLC257MH-8
C-Band Power GaAs FET
S11
S22
+j50
+j100
6.5
6GHz
7
7.5
+j10
0
9
6GHz
+j250
7 7.5
6GHz
7
6GHz
8
25
100
50Ω
250
180°
8.5
4
3
2
1
SCALE FOR |S21|
-j10
-j250
-j25
8
8
8.5
9
8.5
0°
9
SCALE FOR |S12|
+j25
9
8.5
8
7.5
7
6.5
S21
S12
+90°
-j100
-j50
.02
.04
.06
.08
-90°
S11
S-PARAMETERS
VDS = 10V, IDS = 600mA
S21
S12
MAG
ANG
MAG
ANG
MAG
ANG
FREQUENCY
(MHZ)
MAG
ANG
S22
500
.928
-142.8
7.163
109.2
.021
28.8
.344
-157.2
6000
.826
127.2
1.097
90.1
.025
99.3
.778
-174.5
6500
.770
114.2
1.179
92.6
.026
98.5
.798
-179.6
7000
.666
98.0
1.270
84.3
.030
81.0
.834
175.7
7500
.485
78.9
1.453
73.2
.035
67.7
.863
169.2
8000
.170
55.0
1.500
53.1
.041
43.3
.894
162.7
8500
.243
-164.9
1.368
29.9
.042
14.0
.889
156.1
9000
.561
170.0
1.053
10.3
.038
-12.0
.874
150.6
9500
.740
150.0
.758
-1.9
.029
-29.6
.848
146.0
10000
.828
134.3
.569
-9.3
.023
-40.1
.846
143.4
Download S-Parameters, click here
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FLC257MH-8
C-Band Power GaAs FET
0.5
(0.020)
0.1
(0.004)
1
3.5±0.15
(0.138)
2-ø1.8±0.15
(0.071)
1.0 Min.
(0.039)
Case Style "MH"
Metal-Ceramic Hermetic Package
2
1.0 Min.
(0.039)
3
2.8 Max
(0.110)
6.7±0.2
(0.264)
0.1
(0.004)
1.0
(0.039)
3.5±0.3
(0.138)
1.65±0.15
(0.065)
10.0±0.3
(0.394)
1: Gate
2: Source (Flange)
3: Drain
Unit: mm (Inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
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