EUDYNA FMM5807X

FMM5807X
21-27GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
•
High Output Power: P1dB = 30dBm (Typ.)
High Gain: G1dB = 14dB (Typ.)
High PAE: ηadd = 20% (Typ.)
Wide Frequency Band: 21-27 GHz
Impedance Matched Zin/Zout = 50Ω
0.25µm PHEMT Technology
DESCRIPTION
The FMM5807X is a high-gain, wide band 3-stage
MMIC amplifier designed for operation in the 21-27GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems. This device is well suited
for millimeter wave radio applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDD
10
V
Gate-Source Voltage
VGG
-3.0
V
Input Power
Pin
25
dBm
Storage Temperature
Tstg
-65 to +175
°C
Operating Backside Temperature
Top
-40 to +85
°C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Frequency Range
Symbol
Min.
f
Limits
Typ. Max.
Unit
21 - 27
GHz
-
dBm
14
19
dB
-
700
950
mA
-
20
-
%
RLin
-
-12
-
dB
RLout
-
-8
-
dB
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Drain Current
Iddrf
Power-Added Efficiency
ηadd
Input Return Loss
Output Return Loss
Conditions
VDD = 6V
f = 21 ~ 27 GHz
*: at f = 21-24 GHz
**: at f = 24-27 GHz
IDD = 650mA (Typ.)
ZS = ZL = 50Ω
Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
27*
28**
29*
30**
10
G.C.P.: Gain Compression Point
Edition 1.2
January 2001
1
FMM5807X
21-27GHz Power Amplifier MMIC
P1dB, G1dB vs. VDD
IDD = 0.6IDSS
f = 26GHz
OUTPUT POWER & INPUT POWER vs. FREQUENCY
VDD = 6V, IDD = 650mA
P1dB
G1dB
34
32
30
Output Power (dBm)
P1dB (dBm), G1dB (dBm)
35
25
20
6dBm
8dBm
10dBm
11dBm
16dBm
12dBm
13dBm
14dBm
15dBm
30
28
26
24
15
22
4
5
6
7
21
VDD
22
23
24
25
26
27
Frequency (GHz)
P1dB, G1dB vs. FREQUENCY
OUTPUT POWER vs. IMD
-20
-25
32
-30
30
-35
IMD (dBc)
28
18
26
16
14
12
G1dB (dB)
P1dB (dBm)
34
IDD = 650mA
VDD = 6V
-40
VDD = 6V,
IDS = 650mA
∆f = 10MHz
21 GHz IM3
21 GHz IM5
26.5 GHz IM3
26.5 GHz IM5
-45
-50
-55
10
-60
21
22
23
24
25
26
27
14
Frequency (GHz)
16
18
20
22
24
Total Output Power (dBm)
2
26
28
FMM5807X
21-27GHz Power Amplifier MMIC
BONDING/ASSEMBLY DRAWING
VDD
220pF
0.15µF
RFin
RFout
220pF
220pF
VGG
0.15µF
VDD
0.15µF
S-PARAMETERS
VDD = 6V, IDD = 650mA
FREQUENCY
S11
(MHZ)
MAG
ANG
18000
18500
19000
19500
20000
20500
21000
21500
22000
22500
23000
23500
24000
24500
25000
25500
26000
26500
27000
27500
28000
28500
29000
29500
30000
.776
.740
.698
.655
.613
.566
.520
.476
.433
.400
.367
.339
.308
.276
.243
.204
.166
.121
.064
.038
.140
.286
.408
.445
.453
72.5
65.1
57.8
50.9
44.5
38.3
31.9
26.4
21.2
16.1
10.8
5.7
-0.5
-7.1
-13.7
-22.5
-30.8
-44.7
-70.0
176.2
117.5
86.2
52.4
23.9
2.0
S21
S12
MAG
ANG
MAG
3.842
4.541
5.287
6.001
6.588
6.949
7.057
7.001
6.807
6.568
6.314
6.104
5.956
5.838
5.799
5.832
5.924
6.109
6.364
6.673
6.840
6.228
4.231
2.273
1.145
10.4
-16.8
-45.5
-75.6
-106.9
-138.6
-170.2
159.2
129.6
100.8
72.6
45.1
17.8
-9.8
-37.5
-66.5
-96.6
-128.9
-164.0
156.2
109.2
52.2
-8.6
-59.9
-100.4
.003
.005
.004
.005
.005
.004
.003
.004
.005
.005
.004
.003
.003
.005
.005
.006
.008
.006
.009
.008
.009
.007
.004
.003
.009
Download S-Parameters, click here
3
S22
ANG
-91.0
-75.1
-88.7
-82.5
-107.9
-68.8
-81.6
-42.0
-78.6
-75.2
-88.8
-45.0
-86.7
-80.9
-67.7
-59.8
-67.8
-60.7
-71.9
-91.5
-100.9
-119.9
-96.0
-59.5
-77.3
MAG
.702
.617
.510
.381
.230
.082
.100
.215
.309
.380
.425
.444
.452
.451
.436
.419
.391
.351
.309
.269
.250
.292
.330
.350
.382
ANG
63.2
52.6
41.5
29.7
21.6
32.9
123.2
129.2
121.0
111.4
100.1
90.0
80.2
70.6
61.0
50.8
39.8
27.4
14.7
2.3
-9.2
-34.1
-73.1
-113.7
-145.3
FMM5807X
21-27GHz Power Amplifier MMIC
CHIP OUTLINE
VGG1
0
3450
VDD1
235
620
VDD2
1290
2225
VDD4
2950
2200
2110
2020
Unit: µm
2200
2015
1330
1275
RFin
RFout
180
185
90
0
0
0 105 265
620
1290
VDD3
2225
2950
VDD5
3350
3450
VGG2
Chip Size: 3450±30µm x 2200±30µm
Chip Thickness: 70µm
DC Pad Dimensions: VGG: 80 x 80µm
VDD: 100 x 100µm
RF Pad Dimensions: 120µm x 80µm
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not ingest.
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0500M200
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