FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm (Typ.) High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5807X is a high-gain, wide band 3-stage MMIC amplifier designed for operation in the 21-27GHz frequency range. This amplifier has an input and output designed for use in 50Ω systems. This device is well suited for millimeter wave radio applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDD 10 V Gate-Source Voltage VGG -3.0 V Input Power Pin 25 dBm Storage Temperature Tstg -65 to +175 °C Operating Backside Temperature Top -40 to +85 °C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively. 3. This product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C) Item Frequency Range Symbol Min. f Limits Typ. Max. Unit 21 - 27 GHz - dBm 14 19 dB - 700 950 mA - 20 - % RLin - -12 - dB RLout - -8 - dB Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Drain Current Iddrf Power-Added Efficiency ηadd Input Return Loss Output Return Loss Conditions VDD = 6V f = 21 ~ 27 GHz *: at f = 21-24 GHz **: at f = 24-27 GHz IDD = 650mA (Typ.) ZS = ZL = 50Ω Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1) 27* 28** 29* 30** 10 G.C.P.: Gain Compression Point Edition 1.2 January 2001 1 FMM5807X 21-27GHz Power Amplifier MMIC P1dB, G1dB vs. VDD IDD = 0.6IDSS f = 26GHz OUTPUT POWER & INPUT POWER vs. FREQUENCY VDD = 6V, IDD = 650mA P1dB G1dB 34 32 30 Output Power (dBm) P1dB (dBm), G1dB (dBm) 35 25 20 6dBm 8dBm 10dBm 11dBm 16dBm 12dBm 13dBm 14dBm 15dBm 30 28 26 24 15 22 4 5 6 7 21 VDD 22 23 24 25 26 27 Frequency (GHz) P1dB, G1dB vs. FREQUENCY OUTPUT POWER vs. IMD -20 -25 32 -30 30 -35 IMD (dBc) 28 18 26 16 14 12 G1dB (dB) P1dB (dBm) 34 IDD = 650mA VDD = 6V -40 VDD = 6V, IDS = 650mA ∆f = 10MHz 21 GHz IM3 21 GHz IM5 26.5 GHz IM3 26.5 GHz IM5 -45 -50 -55 10 -60 21 22 23 24 25 26 27 14 Frequency (GHz) 16 18 20 22 24 Total Output Power (dBm) 2 26 28 FMM5807X 21-27GHz Power Amplifier MMIC BONDING/ASSEMBLY DRAWING VDD 220pF 0.15µF RFin RFout 220pF 220pF VGG 0.15µF VDD 0.15µF S-PARAMETERS VDD = 6V, IDD = 650mA FREQUENCY S11 (MHZ) MAG ANG 18000 18500 19000 19500 20000 20500 21000 21500 22000 22500 23000 23500 24000 24500 25000 25500 26000 26500 27000 27500 28000 28500 29000 29500 30000 .776 .740 .698 .655 .613 .566 .520 .476 .433 .400 .367 .339 .308 .276 .243 .204 .166 .121 .064 .038 .140 .286 .408 .445 .453 72.5 65.1 57.8 50.9 44.5 38.3 31.9 26.4 21.2 16.1 10.8 5.7 -0.5 -7.1 -13.7 -22.5 -30.8 -44.7 -70.0 176.2 117.5 86.2 52.4 23.9 2.0 S21 S12 MAG ANG MAG 3.842 4.541 5.287 6.001 6.588 6.949 7.057 7.001 6.807 6.568 6.314 6.104 5.956 5.838 5.799 5.832 5.924 6.109 6.364 6.673 6.840 6.228 4.231 2.273 1.145 10.4 -16.8 -45.5 -75.6 -106.9 -138.6 -170.2 159.2 129.6 100.8 72.6 45.1 17.8 -9.8 -37.5 -66.5 -96.6 -128.9 -164.0 156.2 109.2 52.2 -8.6 -59.9 -100.4 .003 .005 .004 .005 .005 .004 .003 .004 .005 .005 .004 .003 .003 .005 .005 .006 .008 .006 .009 .008 .009 .007 .004 .003 .009 Download S-Parameters, click here 3 S22 ANG -91.0 -75.1 -88.7 -82.5 -107.9 -68.8 -81.6 -42.0 -78.6 -75.2 -88.8 -45.0 -86.7 -80.9 -67.7 -59.8 -67.8 -60.7 -71.9 -91.5 -100.9 -119.9 -96.0 -59.5 -77.3 MAG .702 .617 .510 .381 .230 .082 .100 .215 .309 .380 .425 .444 .452 .451 .436 .419 .391 .351 .309 .269 .250 .292 .330 .350 .382 ANG 63.2 52.6 41.5 29.7 21.6 32.9 123.2 129.2 121.0 111.4 100.1 90.0 80.2 70.6 61.0 50.8 39.8 27.4 14.7 2.3 -9.2 -34.1 -73.1 -113.7 -145.3 FMM5807X 21-27GHz Power Amplifier MMIC CHIP OUTLINE VGG1 0 3450 VDD1 235 620 VDD2 1290 2225 VDD4 2950 2200 2110 2020 Unit: µm 2200 2015 1330 1275 RFin RFout 180 185 90 0 0 0 105 265 620 1290 VDD3 2225 2950 VDD5 3350 3450 VGG2 Chip Size: 3450±30µm x 2200±30µm Chip Thickness: 70µm DC Pad Dimensions: VGG: 80 x 80µm VDD: 100 x 100µm RF Pad Dimensions: 120µm x 80µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not ingest. FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0500M200 4