InGaAs-PIN/Preamp Receiver FRM3Z121KT/LT FEATURES KT • Data rate up to 156Mb/s • High Responsivity: 0.85A/W at 1,310nm • High temperature operation up to 85°C APPLICATIONS • Medium bit rate standard medium haul optical transmission system at STM-1 (OC-3) DESCRIPTION These PIN preamplifiers use an InGaAs PIN with a GaAs IC preamplifier. Package style is a hermetically sealed, epoxyless coaxial package with a multimode fiber pigtail. LT Edition 1.0 March 1999 1 InGaAs-PIN/Preamp Receiver FRM3Z121KT/LT ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Parameter Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Case Temperature Top -40 to +85 °C IC Supply Voltage Vss -7 to +0 V PD Supply Voltage Vr 0 to +20 V PD Reverse Current Ir 500 µA Po max 0 dBm Maximum Input Power OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40° to +85°C, Vss=-5.2V, Vr=GND level and λ=1,310/1,550nm unless otherwise specified) Min. Limits Typ. λ=1,310nm 0.8 0.85 - A/W Zt AC, RL=50Ω, Pin <-20dBm 8.0 10.5 - KΩ BW AC-Coupled, RL=50Ω, -3dBm from 1MHz 110 - - MHz 156Mb/s NRZ, 223-1 P.R.B.S., B.E.R.=10-10 Ta=25°C - -39 -38 dBm Ta=-40 to +85°C - -38.5 -37.5 dBm Pmax Note (1) -7 - - dBm Power Supply Current Iss - - - 40 mA Recommended Supply Vss - -5.46 -5.2 -4.94 V Vr - 0 - 20 V ORL - 30 - - dB in avg. within 110MHz - 1.12 1.4 pA/ Hz Symbol Test Conditions Responsivity R Transimpedance Parameter Bandwidth Sensitivity Maximum Input Optical Power PD Voltage Optical Return Loss Equivalent Input Current Density Pr Unit Max. Note: (1) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output waveform is less than 10% compared with that of the low input; optical power level. (2) No data is accompanied with each device. (3) Optical characteristics are specified on the condition that single mode fiber is used as the optical source for testing. 2 InGaAs-PIN/Preamp Receiver FRM3Z121KT/LT Fig. 2 Relative Frequency Response Ta = 25°C Vss=-5.2V VR=5V CW condition RL=∞ λ=1,310nm -0.1 -0.2 +3 Relative Response (dB) 0 -0.3 -0.4 Pin=-10dBm 0 -3 Ta = 25°C Pin=-35dBm Vss=-5.2V VR=5V AC-Coupled RL=50Ω λ=1,310nm/1,550nm -6 -9 -0.5 -0.6 50 100 1 10 Photo Current (µA) 100 1000 Frequency, f(MHz) Fig. 3 Equivalent Input Noise Current Density Fig. 4 Eye diagram with a 1,310nm,156Mbps NRZ, 223-1 PRBS incident signal at Tc = 25°C 10 Equivalent input noise current density in (pA/√Hz) Delta Output Voltage, ∆Vout (V) Fig. 1 Normarized Output Voltage as a function of Peak Photo Current 5 50mV/Div Ta = 25°C Vss=-5.2V AC-Coupled RC=50Ω 1ns/Div Pin=-7dBm with Bessel filter 1 10 100 1000 Frequency, f (MHz) 3 InGaAs-PIN/Preamp Receiver FRM3Z121KT/LT Fig. 5 Bit Error Rate at 1,310nm and a 156Mbps NRZ 223-1 PRBS for various case temperture 10-3 λ=1,310nm 156Mb/s NRZ Vss=-5.2V VR=GND Ta=25°C 10-4 85°C Bit Error Rate 10-5 10-6 -40°C 10-7 10-8 10-9 10-10 10-11 10-12 -45 -40 -35 -30 Received Optical Power (dBm) “KT” PACKAGE UNIT: mm GND 2-C1.5 2.0±0.1 VR 2.5±0.1 VSS Ø0.9±0.1 Ø7.2 MAX Ø6.0 MAX 4-Ø0.45±0.05 P.C.D. 4.0±0.2 P.C.D. 2.0±0.2 8.4±0.2 14.0±0.15 17.0±0.2 VR OUT GND 4.4 MAX 32.0 MAX 10.0 MIN 4.2±0.2 1000 MIN VSS 8.4±0.2 OUT UNIT: mm “LT” PACKAGE GND VR VR 7.6 MAX Ø0.9 Ø6.0 MAX 1.0±0.1 VSS OUT Ø7.2 MAX 4-Ø0.45±0.05 2.5±0.1 P.C.D. 2.0±0.2 OUT P.C.D. 4.0±0.2 14.0±0.15 17.0±0.2 VSS GND 10.0 MIN 32.0 MAX 4 1000 MIN InGaAs-PIN/Preamp Receiver FRM3Z121KT/LT For further information please contact: CAUTION FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200 5