EUDYNA FRM3Z121LT

InGaAs-PIN/Preamp
Receiver
FRM3Z121KT/LT
FEATURES
KT
• Data rate up to 156Mb/s
• High Responsivity: 0.85A/W at 1,310nm
• High temperature operation up to 85°C
APPLICATIONS
• Medium bit rate standard medium haul
optical transmission system at STM-1 (OC-3)
DESCRIPTION
These PIN preamplifiers use an InGaAs PIN with a GaAs IC preamplifier.
Package style is a hermetically sealed, epoxyless coaxial package
with a multimode fiber pigtail.
LT
Edition 1.0
March 1999
1
InGaAs-PIN/Preamp
Receiver
FRM3Z121KT/LT
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Parameter
Symbol
Ratings
Unit
Storage Temperature
Tstg
-40 to +85
°C
Operating Case Temperature
Top
-40 to +85
°C
IC Supply Voltage
Vss
-7 to +0
V
PD Supply Voltage
Vr
0 to +20
V
PD Reverse Current
Ir
500
µA
Po max
0
dBm
Maximum Input Power
OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40° to +85°C, Vss=-5.2V, Vr=GND level and
λ=1,310/1,550nm unless otherwise specified)
Min.
Limits
Typ.
λ=1,310nm
0.8
0.85
-
A/W
Zt
AC, RL=50Ω,
Pin <-20dBm
8.0
10.5
-
KΩ
BW
AC-Coupled, RL=50Ω,
-3dBm from 1MHz
110
-
-
MHz
156Mb/s NRZ, 223-1
P.R.B.S., B.E.R.=10-10
Ta=25°C
-
-39
-38
dBm
Ta=-40 to +85°C
-
-38.5
-37.5
dBm
Pmax
Note (1)
-7
-
-
dBm
Power Supply Current
Iss
-
-
-
40
mA
Recommended Supply
Vss
-
-5.46
-5.2
-4.94
V
Vr
-
0
-
20
V
ORL
-
30
-
-
dB
in
avg. within 110MHz
-
1.12
1.4
pA/ Hz
Symbol
Test Conditions
Responsivity
R
Transimpedance
Parameter
Bandwidth
Sensitivity
Maximum Input Optical Power
PD Voltage
Optical Return Loss
Equivalent Input Current Density
Pr
Unit
Max.
Note: (1) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output waveform is less than 10%
compared with that of the low input; optical power level.
(2) No data is accompanied with each device.
(3) Optical characteristics are specified on the condition that single mode fiber is used as the optical source for testing.
2
InGaAs-PIN/Preamp
Receiver
FRM3Z121KT/LT
Fig. 2 Relative Frequency Response
Ta = 25°C
Vss=-5.2V
VR=5V
CW condition
RL=∞
λ=1,310nm
-0.1
-0.2
+3
Relative Response (dB)
0
-0.3
-0.4
Pin=-10dBm
0
-3
Ta = 25°C
Pin=-35dBm
Vss=-5.2V
VR=5V
AC-Coupled
RL=50Ω
λ=1,310nm/1,550nm
-6
-9
-0.5
-0.6
50
100
1
10
Photo Current (µA)
100
1000
Frequency, f(MHz)
Fig. 3 Equivalent Input Noise Current Density
Fig. 4 Eye diagram with a 1,310nm,156Mbps NRZ,
223-1 PRBS incident signal at Tc = 25°C
10
Equivalent input noise current density
in (pA/√Hz)
Delta Output Voltage, ∆Vout (V)
Fig. 1 Normarized Output Voltage
as a function of Peak Photo Current
5
50mV/Div
Ta = 25°C
Vss=-5.2V
AC-Coupled
RC=50Ω
1ns/Div
Pin=-7dBm
with Bessel filter
1
10
100
1000
Frequency, f (MHz)
3
InGaAs-PIN/Preamp
Receiver
FRM3Z121KT/LT
Fig. 5 Bit Error Rate at 1,310nm and a 156Mbps NRZ
223-1 PRBS for various case temperture
10-3
λ=1,310nm
156Mb/s
NRZ
Vss=-5.2V
VR=GND
Ta=25°C
10-4
85°C
Bit Error Rate
10-5
10-6
-40°C
10-7
10-8
10-9
10-10
10-11
10-12
-45
-40
-35
-30
Received Optical Power (dBm)
“KT” PACKAGE
UNIT: mm
GND
2-C1.5
2.0±0.1
VR
2.5±0.1
VSS
Ø0.9±0.1
Ø7.2 MAX
Ø6.0 MAX
4-Ø0.45±0.05
P.C.D. 4.0±0.2
P.C.D. 2.0±0.2
8.4±0.2
14.0±0.15
17.0±0.2
VR
OUT
GND
4.4 MAX
32.0 MAX
10.0 MIN
4.2±0.2
1000 MIN
VSS
8.4±0.2
OUT
UNIT: mm
“LT” PACKAGE
GND
VR
VR
7.6 MAX
Ø0.9
Ø6.0 MAX
1.0±0.1
VSS
OUT
Ø7.2 MAX
4-Ø0.45±0.05
2.5±0.1
P.C.D. 2.0±0.2
OUT
P.C.D. 4.0±0.2
14.0±0.15
17.0±0.2
VSS
GND
10.0 MIN
32.0 MAX
4
1000 MIN
InGaAs-PIN/Preamp
Receiver
FRM3Z121KT/LT
For further information please contact:
CAUTION
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0199M200
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