Preliminary 03.05.08 P0531981H ♦ Features • • • • • • • 1.9 GHz band Power Amplifier Module 1.9 GHz frequency band Typical 36 dBm output power Low power consumption 18 W typ. Excellent adjacent leakage power Typical 35 dB power gain Cost-effective metal package Low thermal resistance structure ♦ Applications • Final stage power amplifier of base station for PHS ♦ Description The P0531981H is a high performance 1.9 GHz band power amplifier module capable of 36 dBm output power with a typical 35 dB gain at 1.9 GHz band, housed in a cost effective metal package. This device features a low power consumption owing to the excellent linearity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 1500 mA typical. It operates from +12 V and -4.9 V power supplies. P0531981H Power Amplifier Module ♦ Absolute Maximum Ratings Case Temperature Tc=25 °C Parameter Symbol Value Units Vd1, Vd2 14 * V Vg1, Vg2 -7 V Input Power Pin 10 dBm Storage Temperature Tstg -40 to + 95 °C Operating Case Temperature Topt -25 to + 80 °C DC Supply Voltage Notes: Operating of this device above any one of these parameters may cause permanent damage. *Vg1,Vg2=-4.9V ♦ Electrical Specifications Case Temperature Tc=25 °C Value Parameter Symbol Test Conditions Units Min. Typ. Max. Frequency f 1880 — 1920 MHz Supply Current (under operation) Id — 1500 1650 mA Gate Current Ig — 8 15 mA Power Gain Ga 34 35 — dB Input VSWR ρin — 1.5 2.5 — 2f0 — -45 -35 dBc 3f0 — -45 -35 dBc Pout=36.0 dBm Vd1=12 V Vd2=12 V Vg1=-4.9 V Vg2=-4.9 V Harmonic Distortion Padj1 600 kHz offset — -70 -67 dBc Padj2 900 kHz offset — -74 -72 dBc Adjacent Channel Leakage Power P0531981H Power Amplifier Module ♦ Package Drawings (Dimensions are mm) 29.0 26.4±0.1 A SUMITOMO ELECTRIC 9.0 5.0 13.0 2.0 22.0 P0531981H (1) (2) (3) (4) (5) 1.8 2.4 2.0 4-R1.2 (6) 2.0 2.5 2.5 2.5 2.5 7.5 1.2 0.25 4.0±0.5 // 0.1 A 2.5 :Lot No. 22.0±0.1 Dimensions are mm ♦ Pin Assignment (1) RFout (4) Vd1 (2) Vd2 (5) Vg1 (3) Vg2 (6) RFin Case: GND Electron Device Department P0531981H Power Amplifier Module ♦ Power Characteristics Pout Total Id RF Gain 38 2000 37 1800 36 1600 35 1400 34 1200 33 1000 -4 -3 -2 -1 0 1 2 Pin (dBm) ♦ Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion -40 f=1900MHz Vd=12V Vg=-4.9V 2nd Harmonic Distortion (dBc) 3rd Harmonic Distortion (dBc) -45 -50 -55 -60 -65 -70 -75 -80 33 34 35 Pout (dBm) 36 37 38 Total Id RF (mA) Pout (dBm) Gain (dB) f=1900MHz Vd=12V Vg=-4.9V P0531981H Power Amplifier Module ♦ Adjacent Channel Leakage Power ACLR 600kHz Offset ACLR 900kHz Offset -60 ACLR 600kHz Offset (dBc) ACLR 900kHz Offset (dBc) f=1900MHz Vd=12V Vg=-4.9V -65 -70 -75 -80 33 34 35 Pout (dBm) 36 37 38 P0531981H Power Amplifier Module ♦ Evaluation Board Layout (Dimensions are mm) KP009J 42 44.2 C2 C1 C2 C1 C2 C2 C1 C1 RFout RFin RFin Vg1 Vg2 Vd1 Vg1 Vd1 Vg2 Vd2 RFout Vd2 RFin RFout DESIGNATION C1 C2 Vd2 C1 C2 Vg2 C1 C2 Vd1 C1 C2 Vg1 C1 C2 VALUE 1µF 0.1µF