EUPEC FD300R12KE3

Technische Information / technical information
IGBT-Module
IGBT-Modules
FD300R12KE3
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Tvj= 25°C
VCES
1200
V
Kollektor Dauergleichstrom
DC collector current
Tc= 80°C
Tc= 25°C
IC, nom
IC
300
480
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tp= 1ms, Tc= 80°C
ICRM
600
A
Gesamt Verlustleistung
total power dissipation
Tc= 25°C, Transistor
Ptot
1470
W
VGES
+/- 20
V
IF
300
A
IFRM
600
A
I²t
19
k A²s
VISOL
2,5
kV
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
tp= 1ms
Grenzlastintegral
I²t value
VR= 0V, tp= 10ms, Tvj= 125°C
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter saturation voltage
IC= 300A, VGE= 15V, Tvj= 25°C
IC= 300A, VGE= 15V, Tvj= 125°C
min.
typ.
max.
-
1,7
2,15
V
-
2,0
-
V
VGE(th)
5,0
5,80
6,50
V
VCEsat
Gate Schwellenspannung
gate threshold voltage
IC= 12mA, VCE= VGE, Tvj= 25°C
Gateladung
gate charge
VGE= -15V...+15V
QG
-
2,80
-
µC
Eingangskapazität
input capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Cies
-
21
-
nF
Rückwirkungskapazität
reverse transfer capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Cres
-
0,85
-
nF
Kollektor Emitter Reststrom
collector emitter cut off current
VCE= 1200V, VGE= 0V, Tvj= 25°C
ICES
-
-
5
mA
Gate Emitter Reststrom
gate emitter leakage current
VCE= 0V, VGE= 20V, Tvj= 25°C
IGES
-
-
400
nA
prepared by: MOD-D2; Mark Münzer
date of publication: 2002-10-02
approved: SM TM; Wilhelm Rusche
revision: 3.0
1 (8)
DB_FD300R12KE3_3.0
2002-10-02
Technische Information / technical information
IGBT-Module
IGBT-Modules
FD300R12KE3
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
min.
typ.
max.
-
0,25
-
µs
-
0,30
-
µs
-
0,09
-
µs
-
0,10
-
µs
-
0,55
-
µs
-
0,65
-
µs
-
0,13
-
µs
-
0,18
-
µs
Eon
-
25
-
mJ
Eoff
-
44
-
mJ
ISC
-
1200
-
A
LσCE
-
20
-
nH
RCC´/EE´
-
0,7
-
mΩ
-
1,65
2,15
V
-
1,65
-
V
-
210
-
A
-
270
-
A
-
30
-
µC
-
56
-
µC
-
14
-
mJ
-
26
-
mJ
IC= 300A, VCC= 600V
Einschaltverzögerungszeit (induktive Last)
turn on delay time (inductive load)
VGE= ±15V, RG= 2,4Ω, Tvj= 25°C
td,on
VGE= ±15V, RG= 2,4Ω, Tvj= 125°C
IC= 300A, VCC= 600V
Anstiegszeit (induktive Last)
rise time (inductive load)
VGE= ±15V, RG= 2,4Ω, Tvj= 25°C
tr
VGE= ±15V, RG= 2,4Ω, Tvj= 125°C
IC= 300A, VCC= 600V
Abschaltverzögerungszeit (induktive Last)
turn off delay time (inductive load)
VGE= ±15V, RG= 2,4Ω, Tvj= 25°C
td,off
VGE= ±15V, RG= 2,4Ω, Tvj= 125°C
IC= 300A, VCC= 600V
Fallzeit (induktive Last)
fall time (inductive load)
VGE= ±15V, RG= 2,4Ω, Tvj= 25°C
tf
VGE= ±15V, RG= 2,4Ω, Tvj= 125°C
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
IC= 300A, VCC= 600V, Lσ= 80nH
VGE= ±15V, RG= 2,4Ω, Tvj= 125°C
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
IC= 300A, VCC= 600V, Lσ= 80nH
Kurzschlussverhalten
SC data
tP ≤ 10µs, VGE ≤ 15V, TVj ≤ 125°C
VGE= ±15V, RG= 2,4Ω, Tvj= 125°C
VCC= 900V, VCEmax= VCES - LσCE ·di/dt
Modulinduktivität
stray inductance module
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
Tc= 25°C
Charakteristische Werte / characteristic values
Inversdiode / free-wheel diode
IF= 300A, VGE= 0V, Tvj= 25°C
Durchlassspannung
forward voltage
IF= 300A, VGE= 0V, Tvj= 125°C
Rückstromspitze
peak reverse recovery current
VR= 600V, VGE= -15V, Tvj= 25°C
VF
IF= 300A, -diF/dt= 3000A/µs
IRM
VR= 600V, VGE= -15V, Tvj= 125°C
Sperrverzögerungsladung
recovered charge
IF= 300A, -diF/dt= 3000A/µs
VR= 600V, VGE= -15V, Tvj= 25°C
Qr
VR= 600V, VGE= -15V, Tvj= 125°C
Ausschaltenergie pro Puls
reverse recovery energy
IF= 300A, -diF/dt= 3000A/µs
VR= 600V, VGE= -15V, Tvj= 25°C
VR= 600V, VGE= -15V, Tvj= 125°C
2 (8)
Erec
DB_FD300R12KE3_3.0
2002-10-02
Technische Information / technical information
IGBT-Module
IGBT-Modules
FD300R12KE3
Charakteristische Werte / characteristic values
Chopperdiode / chopper diode
IF=400A, VGE= 0V, Tvj= 25°C
-
1,65
2,1
V
-
1,65
-
V
-
280
-
A
-
360
-
A
-
40
-
µC
-
75
-
µC
-
18
-
mJ
-
34
-
mJ
-
-
0,085
K/W
-
-
0,150
K/W
-
-
0,125
K/W
RthCK
-
0,010
-
K/W
Höchstzulässige Sperrschichttemp.
maximum junction temperature
Tvj max
-
-
150
°C
Betriebstemperatur
operation temperature
Tvj op
-40
-
125
°C
Lagertemperatur
storage temperature
Tstg
-40
-
125
°C
Durchlassspannung
forward voltage
Rückstromspitze
peak reverse recovery current
IF= 400A, VGE= 0V, Tvj= 125°C
VF
IF=400A, -diF/dt= 4000A/µs
VR= 600V, VGE= -15V, Tvj= 25°C
IRM
VR= 600V, VGE= -15V, Tvj= 125°C
Sperrverzögerungsladung
recovered charge
IF=400A, -diF/dt= 4000A/µs
VR= 600V, VGE= -15V, Tvj= 25°C
Qr
VR= 600V, VGE= -15V, Tvj= 125°C
Ausschaltenergie pro Puls
reverse recovery energy
IF=400A, -diF/dt= 4000A/µs
VR= 600V, VGE= -15V, Tvj= 25°C
Erec
VR= 600V, VGE= -15V, Tvj= 125°C
Thermische Eigenschaften / thermal properties
Transistor Wechelr. / transistor inverter
Innerer Wärmewiderstand; DC
thermal resistance, junction to case; DC
Inversdiode / free wheel diode
RthJC
Chopper Diode / chopper diode
Übergangs Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
λPaste= 1W/m*K / λgrease= 1W/m*K
Mechanische Eigenschaften / mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Al2O3
CTI
comperative tracking index
425
Anzugsdrehmoment, mech. Befestigung
mounting torque
Schraube M6 / screw M6
M
3,0
-
6,0
Nm
Anzugsdrehmoment, elektr. Anschlüsse
terminal connection torque
Anschlüsse / terminals M6
M
2,5
-
5,0
Nm
Gewicht
weight
G
340
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
3 (8)
DB_FD300R12KE3_3.0
2002-10-02
Technische Information / technical information
IGBT-Module
IGBT-Modules
FD300R12KE3
Ausgangskennlinie (typisch)
output characteristic (typical)
IC= f(VCE)
VGE= 15V
600
Tvj = 25°C
500
Tvj = 125°C
IC [A]
400
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
VCE [V]
Ausgangskennlinienfeld (typisch)
output characteristic (typical)
IC= f(VCE)
Tvj= 125°C
600
VGE=19V
500
VGE=17V
VGE=15V
VGE=13V
IC [A]
400
VGE=11V
VGE=9V
300
200
100
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VCE [V]
4 (8)
DB_FD300R12KE3_3.0
2002-10-02
Technische Information / technical information
IGBT-Module
IGBT-Modules
FD300R12KE3
Übertragungscharakteristik (typisch)
transfer characteristic (typical)
IC= f(VGE)
VCE= 20V
600
Tvj=25°C
500
Tvj=125°C
IC [A]
400
300
200
100
0
5
6
7
8
9
10
11
12
13
VGE [V]
IF= f(VF)
Durchlasskennlinie der Dioden (typisch)
forward caracteristic of diodes (typical)
600
800
700
Tvj = 25°C
Tvj = 125°C
450
600
375
500
300
400
225
300
150
200
75
100
0
IF [A] of chopper diode
IF [A] of inverse diode
525
0
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
VF [V]
5 (8)
DB_FD300R12KE3_3.0
2002-10-02
Technische Information / technical information
IGBT-Module
IGBT-Modules
FD300R12KE3
Schaltverluste (typisch)
Switching losses (typical)
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
VGE=±15V, RG=2,4Ω, VCE=600V, Tvj=125°C
90
80
Eon
70
Erec
Eoff
E [mJ]
60
50
40
30
20
10
0
0
100
200
300
400
500
600
IC [A]
Schaltverluste (typisch)
Switching losses (typical)
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
VGE=±15V, IC=300A, VCE=600V, Tvj=125°C
180
160
Eon
140
Erec
Eoff
E [mJ]
120
100
80
60
40
20
0
0
4
8
12
16
20
24
28
RG [Ω]
6 (8)
DB_FD300R12KE3_3.0
2002-10-02
Technische Information / technical information
IGBT-Module
IGBT-Modules
FD300R12KE3
Transienter Wärmewiderstand
Transient thermal impedance
ZthJC = f (t)
ZthJC [K/W]
1
0,1
Zth : IGBT
0,01
Zth : Inversdiode
Zth : Diode Chopper
0,001
0,001
0,01
0,1
1
t [s]
i
ri [K/kW] : IGBT
τi [s] : IGBT
ri [K/kW] : Inversdiode
τi [s] : Inversdiode
ri [K/kW] : Chopper Diode
τi [s] : Chopper Diode
1
35,73
6,499E-02
62,99
6,499E-02
52,51
6,499E-02
2
42,82
2,601E-02
75,66
2,601E-02
63,02
2,601E-02
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
3
4,84
2,364E-03
8,52
2,364E-03
7,10
2,364E-03
4
1,61
1,187E-05
2,83
1,187E-05
2,37
1,187E-05
VGE=±15V, Tvj=125°C, RG=2,4Ω
700
600
IC [A]
500
400
IC,Chip
IC,Modul
300
200
100
0
0
200
400
600
800
1000
1200
1400
VCE [V]
7 (8)
DB_FD300R12KE3_3.0
2002-10-02
Technische Information / technical information
IGBT-Module
IGBT-Modules
FD300R12KE3
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
Kriechstrecke
creepage distance
20
mm
Luftstrecke
clearance distance
11
mm
8 (8)
DB_FD300R12KE3_3.0
2002-10-02
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Attention
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staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
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with respect to such application. Should you require product information in
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via “www.eupec.com / sales & contact”.
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For information on the types in question please contact your local Sales Office via
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