Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES 1200 V Kollektor Dauergleichstrom DC collector current Tc= 80°C Tc= 25°C IC, nom IC 300 480 A A Periodischer Kollektor Spitzenstrom repetitive peak collector current tp= 1ms, Tc= 80°C ICRM 600 A Gesamt Verlustleistung total power dissipation Tc= 25°C, Transistor Ptot 1470 W VGES +/- 20 V IF 300 A IFRM 600 A I²t 19 k A²s VISOL 2,5 kV Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current tp= 1ms Grenzlastintegral I²t value VR= 0V, tp= 10ms, Tvj= 125°C Isolations Prüfspannung insulation test voltage RMS, f= 50Hz, t= 1min. Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung collector emitter saturation voltage IC= 300A, VGE= 15V, Tvj= 25°C IC= 300A, VGE= 15V, Tvj= 125°C min. typ. max. - 1,7 2,15 V - 2,0 - V VGE(th) 5,0 5,80 6,50 V VCEsat Gate Schwellenspannung gate threshold voltage IC= 12mA, VCE= VGE, Tvj= 25°C Gateladung gate charge VGE= -15V...+15V QG - 2,80 - µC Eingangskapazität input capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cies - 21 - nF Rückwirkungskapazität reverse transfer capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cres - 0,85 - nF Kollektor Emitter Reststrom collector emitter cut off current VCE= 1200V, VGE= 0V, Tvj= 25°C ICES - - 5 mA Gate Emitter Reststrom gate emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25°C IGES - - 400 nA prepared by: MOD-D2; Mark Münzer date of publication: 2002-10-02 approved: SM TM; Wilhelm Rusche revision: 3.0 1 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. - 0,25 - µs - 0,30 - µs - 0,09 - µs - 0,10 - µs - 0,55 - µs - 0,65 - µs - 0,13 - µs - 0,18 - µs Eon - 25 - mJ Eoff - 44 - mJ ISC - 1200 - A LσCE - 20 - nH RCC´/EE´ - 0,7 - mΩ - 1,65 2,15 V - 1,65 - V - 210 - A - 270 - A - 30 - µC - 56 - µC - 14 - mJ - 26 - mJ IC= 300A, VCC= 600V Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) VGE= ±15V, RG= 2,4Ω, Tvj= 25°C td,on VGE= ±15V, RG= 2,4Ω, Tvj= 125°C IC= 300A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 2,4Ω, Tvj= 25°C tr VGE= ±15V, RG= 2,4Ω, Tvj= 125°C IC= 300A, VCC= 600V Abschaltverzögerungszeit (induktive Last) turn off delay time (inductive load) VGE= ±15V, RG= 2,4Ω, Tvj= 25°C td,off VGE= ±15V, RG= 2,4Ω, Tvj= 125°C IC= 300A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 2,4Ω, Tvj= 25°C tf VGE= ±15V, RG= 2,4Ω, Tvj= 125°C Einschaltverlustenergie pro Puls turn on energy loss per pulse IC= 300A, VCC= 600V, Lσ= 80nH VGE= ±15V, RG= 2,4Ω, Tvj= 125°C Ausschaltverlustenergie pro Puls turn off energy loss per pulse IC= 300A, VCC= 600V, Lσ= 80nH Kurzschlussverhalten SC data tP ≤ 10µs, VGE ≤ 15V, TVj ≤ 125°C VGE= ±15V, RG= 2,4Ω, Tvj= 125°C VCC= 900V, VCEmax= VCES - LσCE ·di/dt Modulinduktivität stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25°C Charakteristische Werte / characteristic values Inversdiode / free-wheel diode IF= 300A, VGE= 0V, Tvj= 25°C Durchlassspannung forward voltage IF= 300A, VGE= 0V, Tvj= 125°C Rückstromspitze peak reverse recovery current VR= 600V, VGE= -15V, Tvj= 25°C VF IF= 300A, -diF/dt= 3000A/µs IRM VR= 600V, VGE= -15V, Tvj= 125°C Sperrverzögerungsladung recovered charge IF= 300A, -diF/dt= 3000A/µs VR= 600V, VGE= -15V, Tvj= 25°C Qr VR= 600V, VGE= -15V, Tvj= 125°C Ausschaltenergie pro Puls reverse recovery energy IF= 300A, -diF/dt= 3000A/µs VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C 2 (8) Erec DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Charakteristische Werte / characteristic values Chopperdiode / chopper diode IF=400A, VGE= 0V, Tvj= 25°C - 1,65 2,1 V - 1,65 - V - 280 - A - 360 - A - 40 - µC - 75 - µC - 18 - mJ - 34 - mJ - - 0,085 K/W - - 0,150 K/W - - 0,125 K/W RthCK - 0,010 - K/W Höchstzulässige Sperrschichttemp. maximum junction temperature Tvj max - - 150 °C Betriebstemperatur operation temperature Tvj op -40 - 125 °C Lagertemperatur storage temperature Tstg -40 - 125 °C Durchlassspannung forward voltage Rückstromspitze peak reverse recovery current IF= 400A, VGE= 0V, Tvj= 125°C VF IF=400A, -diF/dt= 4000A/µs VR= 600V, VGE= -15V, Tvj= 25°C IRM VR= 600V, VGE= -15V, Tvj= 125°C Sperrverzögerungsladung recovered charge IF=400A, -diF/dt= 4000A/µs VR= 600V, VGE= -15V, Tvj= 25°C Qr VR= 600V, VGE= -15V, Tvj= 125°C Ausschaltenergie pro Puls reverse recovery energy IF=400A, -diF/dt= 4000A/µs VR= 600V, VGE= -15V, Tvj= 25°C Erec VR= 600V, VGE= -15V, Tvj= 125°C Thermische Eigenschaften / thermal properties Transistor Wechelr. / transistor inverter Innerer Wärmewiderstand; DC thermal resistance, junction to case; DC Inversdiode / free wheel diode RthJC Chopper Diode / chopper diode Übergangs Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λPaste= 1W/m*K / λgrease= 1W/m*K Mechanische Eigenschaften / mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 CTI comperative tracking index 425 Anzugsdrehmoment, mech. Befestigung mounting torque Schraube M6 / screw M6 M 3,0 - 6,0 Nm Anzugsdrehmoment, elektr. Anschlüsse terminal connection torque Anschlüsse / terminals M6 M 2,5 - 5,0 Nm Gewicht weight G 340 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 3 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Ausgangskennlinie (typisch) output characteristic (typical) IC= f(VCE) VGE= 15V 600 Tvj = 25°C 500 Tvj = 125°C IC [A] 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) output characteristic (typical) IC= f(VCE) Tvj= 125°C 600 VGE=19V 500 VGE=17V VGE=15V VGE=13V IC [A] 400 VGE=11V VGE=9V 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Übertragungscharakteristik (typisch) transfer characteristic (typical) IC= f(VGE) VCE= 20V 600 Tvj=25°C 500 Tvj=125°C IC [A] 400 300 200 100 0 5 6 7 8 9 10 11 12 13 VGE [V] IF= f(VF) Durchlasskennlinie der Dioden (typisch) forward caracteristic of diodes (typical) 600 800 700 Tvj = 25°C Tvj = 125°C 450 600 375 500 300 400 225 300 150 200 75 100 0 IF [A] of chopper diode IF [A] of inverse diode 525 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 5 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Schaltverluste (typisch) Switching losses (typical) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) VGE=±15V, RG=2,4Ω, VCE=600V, Tvj=125°C 90 80 Eon 70 Erec Eoff E [mJ] 60 50 40 30 20 10 0 0 100 200 300 400 500 600 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=±15V, IC=300A, VCE=600V, Tvj=125°C 180 160 Eon 140 Erec Eoff E [mJ] 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 RG [Ω] 6 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Transienter Wärmewiderstand Transient thermal impedance ZthJC = f (t) ZthJC [K/W] 1 0,1 Zth : IGBT 0,01 Zth : Inversdiode Zth : Diode Chopper 0,001 0,001 0,01 0,1 1 t [s] i ri [K/kW] : IGBT τi [s] : IGBT ri [K/kW] : Inversdiode τi [s] : Inversdiode ri [K/kW] : Chopper Diode τi [s] : Chopper Diode 1 35,73 6,499E-02 62,99 6,499E-02 52,51 6,499E-02 2 42,82 2,601E-02 75,66 2,601E-02 63,02 2,601E-02 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 3 4,84 2,364E-03 8,52 2,364E-03 7,10 2,364E-03 4 1,61 1,187E-05 2,83 1,187E-05 2,37 1,187E-05 VGE=±15V, Tvj=125°C, RG=2,4Ω 700 600 IC [A] 500 400 IC,Chip IC,Modul 300 200 100 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7 (8) DB_FD300R12KE3_3.0 2002-10-02 Technische Information / technical information IGBT-Module IGBT-Modules FD300R12KE3 Gehäusemaße / Schaltbild Package outline / Circuit diagram Kriechstrecke creepage distance 20 mm Luftstrecke clearance distance 11 mm 8 (8) DB_FD300R12KE3_3.0 2002-10-02 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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