EUPEC FZ400R65KF1

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 400 R 65 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Tvj=125°C
Tvj=25°C
Tvj=-40°C
VCES
6500
6300
5800
V
TC = 80 °C
IC,nom.
400
A
TC = 25 °C
IC
800
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, T C = 80°C
ICRM
800
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
7,4
kW
VGES
+/- 20V
V
IF
400
A
IFRM
800
A
I2t
87
k A2s
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, T vj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VISOL
10,2
kV
Teilentladungs Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)
VISOL
5,1
kV
Charakteristische Werte / Characteristic values
min.
typ.
max.
-
4,3
4,9
V
-
5,3
5,9
V
VGE(th)
6,4
7,0
8,1
V
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 400A, VGE = 15V, Tvj = 25°C
VCE sat
IC = 400A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 70mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
QG
-
5,6
-
µC
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
-
56
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VCE = 6300V, VGE = 0V, Tvj = 25°C
VCE = 6500V, VGE = 0V, Tvj = 125°C
ICES
-
0,4
40
-
mA
mA
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
-
400
nA
prepared by: Dr. Oliver Schilling
date of publication: 2002-07-05
approved by: Dr. Schütze 2002-07-05
revision/Status: Series 1
1
FZ 400 R65 KF1 (final 1).xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 400 R 65 KF1
Charakteristische Werte / Characteristic values
min.
typ.
max.
-
0,75
-
µs
-
0,72
-
µs
-
0,37
-
µs
-
0,40
-
µs
-
5,50
-
µs
-
6,00
-
µs
-
0,40
-
µs
-
0,50
-
µs
Eon
-
4000
-
mJ
Eoff
-
2300
-
mJ
ISC
-
2000
-
A
LsCE
-
20
-
nH
RCC´+EE´
-
0,18
-
mΩ
min.
typ.
max.
3,0
3,8
4,6
V
3,9
4,7
V
-
540
-
A
-
660
-
A
-
360
-
µC
-
700
-
µC
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
IC = 400A, VCE = 3600V
VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C,
td,on
VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C,
Anstiegszeit (induktive Last)
rise time (inductive load)
IC = 400A, VCE = 3600V
VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C,
tr
VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C,
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
IC = 400A, VCE = 3600V
VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C,
td,off
VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C,
Fallzeit (induktive Last)
fall time (inductive load)
IC = 400A, VCE = 3600V
VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C,
tf
VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C,
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
IC = 400A, VCE = 3600V, VGE = ±15V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
IC = 400A, VCE = 3600V, VGE = ±15V
Kurzschlußverhalten
SC Data
tP ≤ 10µsec, VGE ≤ 15V, acc to appl.note 2002/05
RGon = 6,2Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH
RGoff = 36Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH
TVj≤125°C, VCC=4400V, VCEmax=VCES -LσCE ·di/dt
Modulinduktivität
stray inductance module
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
IF = 400A, VGE = 0V, Tvj = 25°C
VF
IF = 400A, VGE = 0V, Tvj = 125°C
IF = 400A, - diF/dt = 1400A/µs
VR = 3600V, VGE = -10V, Tvj = 25°C
IRM
VR = 3600V, VGE = -10V, Tvj = 125°C
Sperrverzögerungsladung
recovered charge
IF = 400A, - diF/dt = 1400A/µs
VR = 3600V, VGE = -10V, Tvj = 25°C
Qr
VR = 3600V, VGE = -10V, Tvj = 125°C
Abschaltenergie pro Puls
reverse recovery energy
IF = 400A, - diF/dt = 1400A/µs
VR = 3600V, VGE = -10V, Tvj = 25°C
VR = 3600V, VGE = -10V, Tvj = 125°C
2
Erec
-
440
-
mJ
-
1050
-
mJ
FZ 400 R65 KF1 (final 1).xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 400 R 65 KF1
Thermische Eigenschaften / Thermal properties
Transistor / transistor, DC
Innerer Wärmewiderstand
thermal resistance, junction to case
Diode/Diode, DC
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur Sperrschicht
junction operation temperature
Schaltvorgänge IGBT(RBSOA);Diode(SOA)
switching operation IGBT(RBSOA);Diode(SOA)
Lagertemperatur
storage temperature
min.
typ.
-
-
0,017
K/W
-
-
0,032
K/W
RthCK
-
0,008
-
K/W
Tvj, max
-
-
150
°C
Tvj,op
-40
-
125
°C
Tstg
-40
-
125
°C
RthJC
max.
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
56
mm
Luftstrecke
clearance
26
mm
CTI
comperative tracking index
>600
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Schraube /screw M6
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Anschlüsse / terminals M4
Anschlüsse / terminals M8
Gewicht
weight
M
M
G
5
Nm
2
Nm
8 - 10
Nm
1000
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3
FZ 400 R65 KF1 (final 1).xls
Technische Information / Technical Information
FZ 400 R 65 KF1
IGBT-Module
IGBT-Modules
Ausgangskennlinie (typisch)
Output characteristic (typical)
IC = f (VCE)
V GE = 15V
800
25°C
700
125°C
IC [A]
600
500
400
300
200
100
0
0,0
1,0
2,0
3,0
4,0
5,0
6,0
7,0
8,0
9,0
10,0
VCE [V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
IC = f (VCE), VGE= < see inset >
Tvj = 125°C
800
20V
700
15V
12V
IC [A]
600
10V
500
400
300
200
100
0
0,0
1,0
2,0
3,0
4,0
5,0
6,0
7,0
8,0
9,0
10,0
VCE [V]
4
FZ 400 R65 KF1 (final 1).xls
Technische Information / Technical Information
FZ 400 R 65 KF1
IGBT-Module
IGBT-Modules
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
IC = f (VGE)
VCE = 10V
800
700
25°C
125°C
IC [A]
600
500
400
300
200
100
0
5
6
7
8
9
10
11
12
13
14
15
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
IF = f (VF)
800
25°C
700
125°C
IF [A]
600
500
400
300
200
100
0
0,0
1,0
2,0
3,0
4,0
5,0
6,0
7,0
VF [V]
5
FZ 400 R65 KF1 (final 1).xls
Technische Information / Technical Information
FZ 400 R 65 KF1
IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
RGon=6,2Ω, RGoff=36Ω, CGE = 44nF, VGE=±15V, VCE = 3600V, Tvj = 125°C,
Switching losses (typical)
11000
10000
9000
Eon
Eoff
E [mJ]
8000
Erec
7000
6000
5000
4000
3000
2000
1000
0
0
100
200
300
400
500
600
700
800
IC [A]
Schaltverluste (typisch)
Switching losses (typical)
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
IC = 400A , VCE = 3600V , VGE=±15V, CGE=44nF , Tvj = 125°C
8000
7200
Eon
Eoff
6400
Erec
E [mJ]
5600
4800
4000
3200
2400
1600
800
0
5
10
15
20
25
30
35
40
45
50
55
60
RG [Ω]
6
FZ 400 R65 KF1 (final 1).xls
Technische Information / Technical Information
FZ 400 R 65 KF1
IGBT-Module
IGBT-Modules
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
RG,off = 36Ω, CGE=44nF, VGE=±15V, Tvj= <see inset>, VCC <=4400V
800
700
600
Tvj=125°C
IC [A]
500
Tvj=25°C
400
300
200
100
0
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
VCE [V] (at auxiliary terminals)
Sicherer Arbeitsbereich Diode (SOA)
safe operation area Diode (SOA)
Pmax = 1200kW ;
Tvj= 125°C
800,0
700,0
IR [A]
600,0
500,0
400,0
300,0
200,0
100,0
0,0
0
1000
2000
3000
4000
5000
6000
VR [V] (at auxiliary terminals)
7
FZ 400 R65 KF1 (final 1).xls
Technische Information / Technical Information
FZ 400 R 65 KF1
IGBT-Module
IGBT-Modules
Transienter Wärmewiderstand
Transient thermal impedance
ZthJC = f (t)
ZthJC [K / W]
0,1
0,01
Zth:Diode
Zth:IGBT
0,001
0,001
0,01
0,1
1
10
100
t [s]
i
1
2
3
4
ri [K/kW]
: IGBT
7,65
4,25
1,02
4,08
τi [s]
: IGBT
0,030
0,10
0,30
1,0
ri [K/kW]
: Diode
14,40
8,00
1,92
7,68
τi [s]
: Diode
0,030
0,10
0,30
1,0
8
FZ 400 R65 KF1 (final 1).xls
Technische Information / Technical Information
FZ 400 R 65 KF1
IGBT-Module
IGBT-Modules
Äußere Abmessungen /
extenal dimensions
Anschlüsse / Terminals
1
Hilfsemitter / auxiliary emitter
2
Gate / gate
3
Hilfskollektor / auxiliary collector
4,6
Emitter / emitter
5,7
Kollektor / collector
9
FZ 400 R65 KF1 (final 1).xls
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