MICROSEMI APT30DS20HJ

APT30DF20HJ
ISOTOP®Fast Diode
Full Bridge Power Module
VRRM = 200V
IF = 30A @ Tc = 80°C
Application
•
•
•
•
Switch mode power supplies rectifier
Induction heating
Welding equipment
High speed rectifiers
Features
•
•
•
•
•
•
•
•
+
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
High level of integration
ISOTOP® Package (SOT-227)
~
Benefits
~
•
•
•
•
•
•
-
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Symbol
VR
VRRM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
IF(AV)
Maximum Average Forward
Current
IFSM
Non-Repetitive Forward Surge Current
Duty cycle = 50%
8.3ms
Max ratings
Unit
200
V
TC = 25°C
45
TC = 80°C
TJ = 45°C
30
A
320
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-4
APT30DF20HJ – Rev 1 November, 2009
Absolute maximum ratings
APT30DF20HJ
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
VF
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Test Conditions
IF = 30A
IF = 60A
Tj = 125°C
IF = 30A
Tj = 25°C
VR = 200V
Tj = 125°C
Min
Typ
1.1
1.4
0.9
Max
1.3
V
250
500
VR = 200V
Unit
95
µA
pF
Dynamic Characteristics
Symbol Characteristic
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Test Conditions
IF = 30A
VR = 133V
di/dt = 200A/µs
IF = 30A
VR = 133V
di/dt=1000A/µs
Min
Typ
Tj = 25°C
24
Tj = 125°C
48
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
33
150
3
6
Tj = 125°C
Max
Unit
ns
nC
A
31
ns
355
nC
19
A
Thermal and package characteristics
Characteristic
Junction to Case Thermal resistance
Junction to Ambient
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-55
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
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Typ
Max
1.2
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
2-4
APT30DF20HJ – Rev 1 November, 2009
Symbol
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
APT30DF20HJ
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
60
trr, Reverse Recovery Time (ns)
IF, Forward Current (A)
60
50
40
30
TJ=125°C
20
TJ=25°C
10
0
0.0
0.3
0.5
0.8
1.0
1.3
TJ=125°C
VR=133V
50
40
60 A
30 A
30
15 A
20
10
0
1.5
0
200
QRR vs. Current Rate Charge
TJ=125°C
VR=133V
60 A
375
30 A
15 A
250
125
0
0
200
400
600
400 600 800
-diF/dt (A/µs)
1000 1200
IRRM vs. Current Rate of Charge
500
800 1000 1200
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (nC)
VF, Anode to Cathode Voltage (V)
20
TJ=125°C
VR=133V
30 A
60 A
15 A
15
10
5
0
-diF/dt (A/µs)
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
500
400
300
200
100
0
1
10
100
1000
VR, Reverse Voltage (V)
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3-4
APT30DF20HJ – Rev 1 November, 2009
C, Capacitance (pF)
600
APT30DF20HJ
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
25.2 (0.992)
25.4 (1.000)
3.30 (.130) 12.6 (.496)
4.57 (.180) 12.8 (.504)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Dimensions in Millimeters and (Inches)
38.0 (1.496)
38.2 (1.504)
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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4-4
APT30DF20HJ – Rev 1 November, 2009
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.