Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0870 purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial and military applications. Features • Usable Gain to 6.0␣ GHz • High Gain: 32.5 dB Typical at 0.1␣ GHz 23.5 dB Typical at 1.0␣ GHz • Low Noise Figure: 3.0␣ dB Typical at 1.0␣ GHz • Hermetic Gold-ceramic Microstrip Package Description The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9544E OUT MSA Vd = 7.8 V 6-418 70 mil Package MSA-0870 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C –65°C to 200°C Thermal Resistance[2,4]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 88°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP VSWR Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω Power Gain (|S21| 2) Input VSWR f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz Units Min. Typ. Max. 22.0 32.5 23.5 11.0 25.0 12.0 dB f = 1.0 to 3.0 GHz Output VSWR f = 1.0 to 3.0 GHz NF 50 Ω Noise Figure f = 1.0 GHz 2.0:1 1.9:1 dB 3.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 27.0 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 125 7.0 7.8 8.4 –17.0 Note: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. 6-419 MSA-0870 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA) S21 S11 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .65 .60 .48 .40 .35 .32 .29 .30 .31 .32 .34 .34 .33 .39 –19 –35 –60 –76 –88 –102 –118 –133 –139 –149 –159 –168 161 128 32.5 31.5 29.1 26.8 24.9 23.4 20.1 17.6 15.6 13.8 12.2 10.8 8.4 6.2 42.04 37.54 28.49 21.90 17.48 14.85 10.14 7.55 6.01 4.87 4.09 3.48 2.63 2.04 161 145 122 108 97 87 70 56 49 39 28 17 –3 –22 –36.3 –33.7 –30.5 –28.0 –26.2 –24.9 –23.0 –21.9 –20.0 –19.5 –18.4 –17.7 –16.6 –16.2 .015 .021 .030 .040 .049 .057 .071 .081 .100 .106 .121 .131 .147 .155 40 47 51 50 50 51 47 45 46 41 35 31 21 10 .64 .58 .47 .38 .33 .28 .22 .16 .12 .07 .07 .12 .19 .21 –22 –43 –74 –97 –113 –128 –151 –167 –172 –170 –143 –112 –103 –115 0.78 0.66 0.64 0.72 0.78 0.83 0.91 0.98 1.02 1.11 1.12 1.16 1.26 1.36 Note: 1. A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 35 40 30 Gain Flat to DC 30 0.1 GHz 30 0.5 GHz 20 15 G p (dB) 25 Id (mA) G p (dB) 25 35 TC = +125°C TC = +25°C TC = –55°C 20 1.0 GHz 20 2.0 GHz 15 10 10 0 0 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. 6 8 5 10 10 Figure 3. Power Gain vs. Current. 4.5 I d = 40 mA 14 11 10 P1 dB (dBm) 12 P1 dB P1 dB (dBm) 13 12 4.0 I d = 36 mA NF (dB) GP 21 40 Figure 2. Device Current vs. Voltage. 23 22 30 I d (mA) 16 24 20 Vd (V) FREQUENCY (GHz) Gp (dB) 4.0 GHz 10 5 10 I d = 20 mA I d = 36 mA I d = 40 mA 3.5 8 NF (dB) 3.0 4 NF 6 I d = 20 mA 3 2 –55 –25 +25 +85 +125 4 0.1 2.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=36mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-420 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF OUTPUT AND BIAS RF INPUT 3 1 2 .004 ± .002 .10 ± .05 GROUND .070 1.70 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 6-421