AGILENT MGA-665P8-BLK

Agilent MGA-665P8
GaAs Enhancement-Mode
PHEMT 0.5 – 6 GHz Low Noise
Amplifier
Data Sheet
Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC
Description
Agilent’s MGA-665P8 is an
economical, easy-to-use GaAs
MMIC Low Noise Amplifier (LNA)
with a unique active-low powerdown function. The LNA has low
noise figure and high gain
achieved through the use of
Agilent Technologies’ proprietary
GaAs Enhancement-mode PHEMT
process. It is housed in a
miniature 2.0 x 2.0 x 0.75 mm
8-pin Leadless-Plastic-ChipCarrier (LPCC) package. The
compact footprint and low profile
coupled with low noise, high gain
and high linearity makes the
MGA-665P8 an ideal choice as an
LNA for broadband generalpurpose applications. Its excellent
broadband isolation also makes it
a good buffer amplifier.
The output of the MGA-665P8
provides a very good broadband
match to 50 Ω. Its input requires a
simple external LC network to
provide a low noise figure and
good input return loss. Power
supply voltage is applied to both
the output terminal and a
separate VD terminal. A simple
external bias insertion circuit
consisting of a shunt inductor and
a series dc block capacitor is
sufficient to apply power supply
voltage to the output of the MGA665P8. The MGA-665P8 provides
typical device performance of
1.45 dB noise figure, 16 dB gain
and an OIP3 of +18.1 dBm at
5.25 GHz, at a bias point of 3 V
and 20.5 mA.
Pin Configuration, Top View
Features
• Active-low power-down function
• Single +3 V supply operation
• Low noise and high gain MMIC
• Output 50 Ω match
• Excellent isolation
• Minimal match and external
biasing components
• Housed in miniature 2 x 2 x 0.75 mm
LPCC package
• Pb-free & MSL-1 package
Specifications
• 0.5 to 6 GHz operation
• At 3 V, 20.5 mA, 2.4 GHz:
NF = 1.2 dB
Gain = 18.4 dB
OIP3 = 19 dBm
• At 3 V, 20.5 mA, 5.25 GHz:
NF = 1.45 dB
Gain = 16 dB
OIP3 = 18.1 dBm
GND PADDLE
1: GND
8: UNUSED
2: RFIN
7: RFOUT & VD
3: GND
6: VD
4: UNUSED
5: POWERDOWN
POWER DOWN FUNCITON:
LOGIC LOW (0-1 V): POWER ON
LOGIC HIGH (2-3 V): POWER OFF
NOTES:
1. PINS 1, 3, AND PADDLE NEED TO BE
PROPERLY GROUNDED TO OBTAIN
SPECIFIED PERFORMANCE.
2. SUPPLY VOLTAGE, VD, NEEDS TO BE
APPLIED AT PINS 6 & 7. SUPPLY AT
PIN 7 TO BE APPLIED USING A BIAS
TEE OR EQUIVALENT.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 150 V
Refer to Agilent Application Note A004R: Electrostatic Discharge, Damage and Control.
1. Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute Maximum
VD
Supply Voltage[2]
V
6
VC
Control Voltage[2]
V
6
mA
45.6
W
0.27
ID
Drain
Current[2]
Dissipation[3]
Pdiss
Total Power
Pin max.
RF Input Power
dBm
13
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
qch_b
Resistance[4]
°C/W
44.76
Thermal
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C. Derate 29 mW/°C for TB > 133°C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
2. Product Consistency Distribution Charts at 5.25 GHz, 3.0 V, Id = 20.5 mA[5,6]
160
180
Stdev = 0.23
Stdev = 0.067
150
+3 Std
80
FREQUENCY
FREQUENCY
120
120
–3 Std
90
60
40
30
0
0
1.2
1.3
1.4
1.5
1.6
17
1.7
17.5
18
18.5
19
OIP3 (dB)
NF (dB)
Figure 2. OIP3; LSL = 17.8, nominal = 18.2.
Figure 1. NF; nominal = 1.45.
400
180
Stdev = 0.20
Stdev = 0.11
150
–3 Std
90
FREQUENCY
FREQUENCY
300
120
+3 Std
60
–3 Std
200
+3 Std
100
30
0
0
15
16
GAIN (dB)
Figure 3. Gain (dB); nominal = 16 dB.
17
11
11.5
12
P1dB (dB)
Figure 4. P1dB; LSL = 11, nominal = 11.4.
Notes:
5. Distribution data sample size is 500 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
6. Measurements are made on production test board described in Figure 5, which represents a trade-off between optimal OIP3, P1dB, Gain and NF.
Circuit losses have been de-embedded from actual measurements
2
3. MGA-665P8 Electrical Specifications
TA = 25°C, DC Bias for RF Parameter is VD = 3.0 V (unless otherwise specified)
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
VC
Control Voltage
V
-
ON: 0–1 V
Off: 2–3 V
-
ID
Device Current
mA
18.2
20.5
23.8
ID (Off)
Off current
VC = 3 V
µA
-
180
220
Gtest[7]
Gain
Freq = 5.25 GHz
dB
14.5
16
17.5
NFtest[7]
Noise Figure
Freq = 5.25 GHz
dB
-
1.45
1.9
OIP3test[7,8]
Output Third Order Intercept Point
Freq = 5.25 GHz
dBm
16.5
18.2
-
P1dBtest[7]
Output Power at 1dB Gain Compression
Freq = 5.25 GHz
dBm
-
11.4
-
Psattest[7]
Output Power at Saturation
Freq = 5.25 GHz
dBm
-
15
-
IRLtest[7]
Input return Loss
Freq = 5.25 GHz
dB
-
18
-
ORLtest[7]
Output Return Loss
Freq = 5.25 GHz
dB
-
20
-
Ga[8]
Associated Gain at NFo
Freq = 0.9 GHz
Freq = 2.4 GHz
Freq = 3.5 GHz
Freq = 5.25 GHz
Freq = 5.8 GHz
dB
-
22.58
18.42
16.99
16.00
17.16
-
NFo[8]
Optimum Noise Figure
(Tuned for Lowest Noise Figure)
Freq = 0.9 GHz
Freq = 2.4 GHz
Freq = 3.5 GHz
Freq = 5.25 GHz
Freq = 5.8 GHz
dB
-
1.30
1.18
1.36
1.45
1.44
-
OIP3[8,9]
Output Third Order Intercept Point at NFo
Freq = 0.9 GHz
Freq = 2.4 GHz
Freq = 3.5 GHz
Freq = 5.25 GHz
Freq = 5.8 GHz
dBm
-
21.26
19.02
17.30
18.10
17.89
-
P1dB[8]
Output Power at 1 dB Gain Compression
Point at NFo
Freq = 0.9 GHz
Freq = 2.4 GHz
Freq = 3.5 GHz
Freq = 5.25 GHz
Freq = 5.8 GHz
dBm
-
8.62
7.41
6.89
7.80
8.32
-
Notes:
7. Measurements obtained using production test board described in Figure 5, which represents a trade-off between optimal OIP3, P1dB, Gain and NF.
Circuit losses have been de-embedded from actual measurements.
8. Measurements obtained using test fixture with input tuned for low noise figure. Gain, OIP3 and P1dB were measured at this tuned condition. Tuner
and fixture losses have been de-embedded from actual measurements. The supply is connected to ground via a bypass capacitor. The OIP3 is
approximately 3 dB lower without this bypass capacitor.
9. OIP3 test condition: Pin = -20 dBm, Df = f1 – f2 = 10 MHz.
3
8.2 nH
1000 pF
VD = 3 V
9.1 Ω
2.2 nH
3 pF
0.6 pF
1 nH
RFIN
RF0UT
0.2 pF
Figure 5: Simplified schematic of 5.25 GHz production test board, which represents a tradeoff
between Gain, NF, OIP3, P1dB and return loss measurements. Circuit losses have been deembedded from actual measurements.
4. MGA-665P8 DC Performance Curves (at 25°C unless specified otherwise)
40
25
35
2.7 V
3.0 V
3.3 V
20
CURRENT (mA)
CURRENT (mA)
30
25
20
15
10
15
-40°C
25°C
85°C
10
5
1.5
2.0
2.5
3.0
3.5
4.0
VOLTAGE (V)
Figure 6. Current vs. supply voltage.
4
4.5
5
5.0
0
0
0.5
1.0
1.5
2.0
CONTROL VOLTAGE (V)
Figure 7. Current vs. control voltage.
2.5
3.0
1.8
24
1.6
22
1.4
20
22
20
1.2
1.0
OIP3 (dB)
18
GAIN (dB)
NOISE FIGURE (dB)
5. MGA-665P8 Performance Curves Tuned For NFmin at VD = 3.0 V, VC = 0 V, ID = 20.5 mA[10]
(at 25°C unless specified otherwise)
18
16
14
14
0.8
-40°C
25°C
85°C
0.6
12
-40°C
25°C
85°C
Figure 8. Minimum noise figure vs. frequency
and temperature.
FREQUENCY (GHz)
Figure 9. Associated gain measured at NFmin
tuned condition vs. frequency and
temperature.
Figure 10. Output third order intercept point
measured at NFmin tuned condition vs.
frequency and temperature.
24
9
1.6
22
8
1.4
20
6
5
4
-40°C
25°C
85°C
GAIN (dB)
1.8
NOISE FIGURE (dB)
10
7
1.2
1.0
0.8
0.4
0.5
Figure 11. Output power for 1 dB gain
compression measured at NFmin tuned
condition vs. frequency and temperature.
16
1.5
2.5
3.5
4.5
12
5.5
FREQUENCY (GHz)
FREQUENCY (GHz)
18
14
2.7 V
3.0 V
3.3 V
0.6
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
-40°C
25°C
85°C
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dB)
12
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.4
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
16
2.7 V
3.0 V
3.3 V
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 12. Minimum noise figure vs.
frequency and voltage.
Figure 13. Associated gain measured at
NFmin tuned condition vs. frequency and
voltage.
10
22
9
20
8
P1dB (dB)
OIP3 (dB)
18
16
14
7
6
5
2.7 V
3.0 V
3.3 V
12
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 14. Output third order intercept point
measured at NFmin tuned condition vs.
frequency and voltage.
2.7 V
3.0 V
3.3 V
4
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 15. Output power for 1 dB gain
compression measured at NFmin tuned
condition vs. frequency and voltage.
Note:
10. Measurements obtained using test fixture with input tuned for low noise figure with a double stub tuner. Gain, OIP3 and P1dB were measured at
this tuned condition. Tuner and fixture losses have been de-embedded from actual measurements. The supply is connected to ground via a bypass
capacitor. The OIP3 is approximately 3dB lower without this bypass capacitor.
5
2.2
24
22
2.0
22
20
1.8
20
1.6
1.4
18
16
-40°C
25°C
85°C
12
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 16. Noise figure (50 Ω) vs. frequency
and temperature.
Figure 17. Gain (50 Ω) vs. frequency and
temperature.
Figure 18. Output third order intercept point
(50 Ω) vs. frequency and temperature.
24
9
1.8
22
8
1.6
20
6
5
-40°C
25°C
85°C
4
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 19. Output power for 1 dB gain
compression (50 Ω) vs. frequency and
temperature.
GAIN (dB)
2.0
NOISE FIGURE (dB)
10
7
-40°C
25°C
85°C
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
P1dB (dB)
-40°C
25°C
85°C
12
0.8
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
16
14
14
1.2
1.0
6
18
OIP3 (dB)
GAIN (dB)
NOISE FIGURE (dB)
6. MGA-665P8 Performance Curves with 50 Ω Input and Output at VD = 3.0 V, VC = 0 V, ID = 20.5 mA[11]
(at 25°C unless specified otherwise)
1.4
1.2
1.0
18
16
14
2.7 V
3.0 V
3.3 V
0.8
0.6
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 20. Noise figure (50 Ω) vs. frequency
and voltage.
2.7 V
3.0 V
3.3 V
12
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 21. Gain (50 Ω) vs. frequency and
voltage.
20
P1dB (dB)
OIP3 (dB)
25
9
15
8
18
16
14
12
10
S-PARAMETERS (dB)
22
7
6
5
2.7 V
3.0 V
3.3 V
2.7 V
3.0 V
3.3 V
4
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 22. Output third order intercept point
(50 Ω) vs. frequency and temperature.
Figure 23. Output power for 1 dB gain
compression (50 Ω) vs. frequency and
voltage.
20
5
-5
-15
-25
S22
S21
S11
-35
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 24. S-Parameters (50 Ω) vs.
frequency.
6
5
15
VSWR_IN
VSWR_OUT
VSWR (n:1)
Pout (dBm)
4
10
5
3
2
Pout vs. Pin
GAIN
P1dB
0
-5
-20
-15
-10
-5
0
5
1
10
Pin (dBm)
Figure 25. Output power and gain vs. input
power at 5.25 GHz.
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 26. Input and output VSWR (50 Ω) vs.
frequency.
Note:
11. Measurements obtained using a 50 Ω test fixture with input and output connected directly to the fixture. Gain, OIP3 and P1dB were measured at
this 50 Ω condition.
7
7. MGA-665P8 Typical Scattering Parameters, TC = 25°C, ZO = 50 Ω, VD = 3 V, VC = 0 V, ID = 20.5 mA (ON State)[12]
Freq
S11
S21
S12
S22
(GHz)
dB
Ang (deg)
dB
Ang (deg)
dB
Ang (deg)
dB
Ang (deg)
K-factor
0.1
-0.25
-12.7
15.56
43.5
-60.00
114.3
-10.17
-39.8
∞
0.5
-3.06
-43.6
21.14
0.9
-60.00
104.2
-13.64
-18.8
∞
1.0
-6.47
-60.0
21.60
-41.0
-60.00
101.8
-14.38
-23.2
30.94
1.5
-8.71
-70.1
20.63
-71.4
-53.98
100.7
-15.28
-31.9
19.48
2.0
-9.92
-79.8
19.48
-95.6
-53.98
94.4
-17.27
-39.4
23.35
2.2
-10.43
-80.6
19.00
-104.3
-50.46
93.6
-18.06
-41.9
16.71
2.4
-10.81
-82.8
18.60
-112.5
-50.46
90.8
-18.56
-45.9
17.69
2.6
-10.87
-85.3
18.18
-120.3
-50.46
89.2
-19.41
-49.2
18.63
2.8
-11.21
-86.9
17.83
-128.1
-47.96
91.5
-20.00
-53.7
14.68
3.0
-11.15
-87.1
17.47
-135.3
-47.96
89.1
-21.01
-57.4
15.31
3.5
-11.06
-91.1
16.74
-153.1
-46.02
84.8
-22.85
-62.4
13.34
4.0
-10.12
-95.5
16.08
-170.1
-43.10
74.6
-26.20
-74.7
10.11
4.5
-9.47
-97.1
15.85
171.4
-40.92
83.7
-23.61
-88.6
7.92
5.0
-8.18
-105.0
15.64
154.2
-40.00
67.7
-24.01
-105.7
6.98
5.2
-7.68
-107.0
15.80
146.6
-40.00
70.3
-23.22
-106.5
6.70
5.4
-6.84
-110.0
15.92
137.7
-39.17
70.1
-21.94
-114.1
5.73
5.6
-6.02
-116.6
15.95
128.2
-38.42
66.2
-21.62
-129.5
4.95
5.8
-5.50
-122.8
15.99
118.4
-37.72
61.9
-21.83
-137.6
4.35
6.0
-5.29
-131.6
15.89
107.6
-37.72
57.5
-24.15
-149.1
4.33
7.0
-4.07
-176.2
13.91
51.1
-36.48
45.9
-18.56
175.5
3.99
8.0
-6.82
145.9
8.74
1.9
-33.98
9.9
-18.42
156.6
7.11
9.0
-10.75
105.8
3.65
-30.7
-37.08
30.5
-16.42
115.7
20.97
10.0
-14.80
69.1
-1.02
-56.3
-31.37
-7.1
-13.15
94.7
19.14
11.0
-23.35
11.8
-5.80
-79.7
-27.96
-46.2
-11.21
79.5
22.41
12.0
-21.41
1.7
-11.15
-95.8
-40.00
-35.5
-9.76
75.1
160.24
13.0
-14.29
-128.0
-13.94
-100.4
-27.74
-55.3
-8.27
67.8
49.64
14.0
-7.391
170.2
-13.07
-123.0
-21.41
-106.8
-7.41
59.7
17.56
15.0
-5.65
121.1
-13.43
-170.4
-19.33
-159.0
-7.35
52.1
12.69
16.0
-7.45
88.6
-12.92
138.4
-17.14
158.4
-7.33
45.7
10.47
17.0
-13.56
97.3
-11.57
87.6
-15.39
117.3
-7.64
37.3
8.75
18.0
-6.06
130.6
-10.23
31.6
-14.11
66.8
-7.74
31.6
4.98
8
8. MGA-665P8 Typical Noise Parameters, TC = 25°C, ZO = 50 Ω, VD = 3 V,
VC = 0 V, ID = 20.5 mA[12]
Gamma Opt
Mag
Ang (deg)
Rn @ 50 ohm
NF50 (dB)
0.5
1.48
0.61
26.8
0.61
2.49
1.0
1.27
0.54
32.1
0.35
1.83
1.5
1.10
0.53
42.0
0.30
1.62
2.0
1.08
0.55
44.3
0.31
1.65
2.4
1.18
0.50
53.2
0.29
1.67
2.8
1.24
0.48
61.3
0.27
1.70
3.2
1.32
0.45
69.3
0.24
1.71
3.5
1.36
0.43
75.9
0.23
1.73
4.0
1.45
0.37
88.6
0.20
1.74
4.5
1.50
0.34
97.9
0.18
1.75
5.0
1.46
0.34
102.9
0.16
1.69
5.2
1.42
0.35
107.8
0.15
1.67
5.4
1.42
0.35
111.3
0.14
1.66
5.6
1.40
0.36
114.3
0.13
1.65
5.8
1.40
0.36
120.1
0.13
1.67
6.0
1.46
0.34
128.3
0.13
1.72
7.0
2.08
0.36
148.2
0.11
2.37
8.0
3.35
0.30
176.0
0.14
3.55
9.0
5.50
0.21
-150.6
0.36
5.61
10.0
8.74
0.11
-106.6
1.00
8.77
25
6
20
5
15
10
5
4
MAG
GAIN
NFmin
NF50
3
2
1
0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5
9
NOISE FIGURE (dB)
NFmin
(dB)
GAIN (dB)
Freq
(GHz)
9. MGA-665P8 Typical Scattering Parameters, TC = 25°C, ZO = 50 Ω, VD = 3 V, VC = 3 V, ID = 180 µA (OFF State)[12]
Freq
S11
S21
S12
S22
(GHz)
dB
Ang (deg)
dB
Ang (deg)
dB
Ang (deg)
dB
Ang (deg)
0.1
-0.04
-2.2
-50.46
100.6
-53.98
70.9
-0.09
-1.9
0.5
-0.26
-8.2
-46.02
66.3
-46.02
55.5
-0.10
-8.4
1.0
-0.27
-15.6
-43.10
58.7
-41.94
53.5
-0.26
-17.0
1.5
-0.34
-23.3
-39.17
51.7
-39.17
51.6
-0.54
-25.8
2.0
-0.37
-32.9
-37.08
44.3
-37.08
45.4
-0.91
-33.1
2.2
-0.40
-36.0
-35.92
46.8
-36.48
44.6
-1.05
-36.5
2.4
-0.46
-38.9
-35.92
44.4
-35.39
42.5
-1.19
-40.2
2.6
-0.51
-42.2
-34.89
37.8
-34.89
38.6
-1.36
-43.3
2.8
-0.55
-44.9
-34.42
40.0
-34.42
38.3
-1.55
-47.4
3.0
-0.47
-48.0
-33.15
35.5
-33.98
35.2
-1.81
-50.5
3.5
-0.52
-55.4
-33.56
29.6
-33.15
27.2
-2.27
-58.9
4.0
-0.57
-62.3
-30.17
23.2
-29.90
23.4
-2.95
-65.3
4.5
-0.47
-69.3
-29.37
17.6
-29.63
18.3
-3.56
-75.8
5.0
-0.41
-76.0
-28.18
7.5
-28.40
5.6
-4.17
-80.6
5.2
-0.28
-78.3
-28.40
5.5
-28.18
4.4
-4.25
-83.6
5.4
-0.05
-81.2
-27.54
2.2
-27.74
2.5
-4.39
-87.1
5.6
0.04
-86.1
-27.13
0.5
-26.94
-1.5
-4.67
-90.0
5.8
0.02
-89.6
-26.20
-5.3
-26.38
-5.8
-4.87
-92.6
6.0
-0.48
-94.1
-26.02
-10.3
-26.02
-10.8
-5.26
-95.6
7.0
-1.03
-111.8
-19.58
-46.8
-19.66
-47.2
-6.02
-114.4
8.0
-0.98
-119.5
-28.18
-141.7
-28.40
-142.7
-6.80
-113.8
9.0
-1.77
-137.0
-28.87
-102.7
-26.94
-110.8
-7.19
-130.3
10.0
-1.45
-143.7
-32.04
170.5
-33.15
165.2
-7.90
-150.5
11.0
-1.72
-166.6
-34.89
148.1
-37.72
145.6
-9.09
179.6
12.0
-2.50
173.7
-37.08
97.0
-37.08
105.5
-8.20
166.6
13.0
-2.56
155.8
-24.88
-0.2
-25.04
1.3
-7.23
136.5
14.0
-3.25
145.4
-16.25
-75
-15.97
-74.9
-7.92
120.9
15.0
-2.03
126.4
-15.65
-138.4
-15.55
-137.8
-5.97
112.6
16.0
-2.15
102.9
-13.85
-172.9
-13.94
-172.1
-5.10
95.7
17.0
-4.45
75.0
-10.17
147.1
-10.31
147.6
-5.76
75.8
18.0
-8.45
108.0
-8.64
75.1
-8.68
75.9
-7.92
78.8
Note:
12. Measurements are made to the package leads as the reference plane.
10
Device Models
Refer to Agilent’s Web Site www.agilent.com/view/rf
Part Number Ordering Information
Part Number
No. of Devices
Container
MGA-665P8-TR1
3000
7” Reel
MGA-665P8-TR2
10000
13” Reel
MGA-665P8-BLK
100
antistatic bag
2x2 LPCC (JEDEC DFP-N) Package Dimensions
D1
P
PIN 1
D
PIN 1
8
1
b
A
1AX
e
BOTTOM VIEW
L
7
2
R
E1
6
4
5
TOP VIEW
A
A1
A2
SIDE VIEW
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
MIN.
0.70
0.00
0.225
1.9
0.65
1.9
1.45
DIMENSIONS
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC.
END VIEW
MAX.
0.80
0.05
0.275
2.1
0.95
2.1
1.75
NOTE: MEASUREMENTS ARE IN MILLIMETERS.
11
E
3
PCB Land Pattern and Stencil Design
2.80 (110.24)
2.72 (107.09)
0.70 (27.56)
0.63 (24.80)
0.22 (8.86)
0.25 (9.84)
0.32 (12.79)
0.25 (9.84)
PIN 1
PIN 1
∅0.20 (∅7.87)
0.50
(19.68)
0.50
(19.68)
0.28
(10.83)
SOLDER MASK
0.25
(9.74)
1.60
(62.99)
0.63 (24.80)
0.60 (23.62)
0.72 (28.35)
0.80 (31.50)
RF TRANSMISSION LINE
0.15 (5.91)
0.55 (21.65)
STENCIL LAYOUT (TOP VIEW)
PCB LAND PATTERN (TOP VIEW)
NOTE: TYPICAL STENCIL THICKNESS IS 5 MILS.
MEASUREMENTS ARE IN MILLIMETERS (MILS).
Device Orientation
REEL
4 mm
CARRIER
TAPE
8 mm
1AX
USER
FEED
DIRECTION
COVER TAPE
12
1AX
1AX
1AX
1.54
(60.61)
Tape Dimensions
P
D
P0
P2
E
F
W
D1
t1
10° MAX.
Tt
K0
10° MAX.
A0
CAVITY
PERFORATION
CARRIER TAPE
COVER TAPE
DISTANCE
13
B0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (inch)
LENGTH
A0
2.30 ± 0.05
0.091 ± 0.004
WIDTH
B0
2.30 ± 0.05
0.091 ± 0.004
DEPTH
K0
1.00 ± 0.05
0.039 ± 0.002
PITCH
P
4.00 ± 0.10
0.157 ± 0.004
BOTTOM HOLE DIAMETER
D1
1.00 ± 0.25
0.039 ± 0.002
DIAMETER
D
1.50 ± 0.10
0.060 ± 0.004
PITCH
P0
4.00 ± 0.10
0.157 ± 0.004
POSITION
E
1.75 ± 0.10
0.069 ± 0.004
WIDTH
W
8.00 + 0.30
0.315 ± 0.012
8.00 – 0.10
0.315 ± 0.004
THICKNESS
t1
0.254 ± 0.02
0.010 ± 0.0008
WIDTH
C
5.4 ± 0.10
0.205 ± 0.004
TAPE THICKNESS
Tt
0.062 ± 0.001
0.0025 ± 0.0004
CAVITY TO PERFORATION (WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION (LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
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Data subject to change.
Copyright © 2005 Agilent Technologies, Inc.
February 2, 2005
5989-2314EN