AGILENT MSA-0370

Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0370
Features
Description
• Cascadable 50 Ω Gain Block
The MSA-0370 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic, high
reliability package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers in
industrial and military applications.
• 3 dB Bandwidth:
DC to 2.8 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P1 dB at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX, silicon
bipolar MMIC process which uses
nitride self-alignment, ion implantation, and gold metallization to
Typical Biasing Configuration
R bias
VCC > 7 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9569E
OUT
MSA
Vd = 5 V
6-306
70 mil Package
achieve excellent performance,
uniformity and reliability. The use
of an external bias resistor for
temperature and current stability
also allows bias flexibility.
MSA-0370 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
80 mA
425 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 125°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8 mW/°C for TC > 147°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
Units
Min.
11.5
GP
Power Gain (|S21| 2)
f = 0.1 GHz
dB
∆GP
Gain Flatness
f = 0.1 to 1.8 GHz
dB
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
GHz
Output VSWR
f = 0.1 to 3.0 GHz
50 Ω Noise Figure
f = 1.0 GHz
Max.
12.5
13.5
± 0.6
± 1.0
2.8
f = 0.1 to 3.0 GHz
NF
Typ.
1.8:1
1.8:1
dB
6.0
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
10.0
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
23.0
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
125
4.5
5.0
5.5
–8.0
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
6-307
MSA-0370 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
S21
S11
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.13
.13
.12
.11
.11
.10
.11
.16
.22
.28
.33
.36
.38
.39
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
–179
–180
–180
–178
–174
–168
–149
–147
–151
–160
–169
–177
163
132
12.6
12.6
12.5
12.4
12.3
12.2
11.7
11.1
10.3
9.3
8.2
7.1
5.1
3.4
4.27
4.25
4.21
4.17
4.11
4.06
3.85
3.57
3.27
2.91
2.58
2.27
1.81
1.48
176
171
162
154
146
137
116
96
82
65
48
34
9
–14
–18.6
–18.3
–18.4
–18.2
–17.8
–17.7
–17.1
–16.2
–15.6
–15.2
–14.5
–14.3
–13.8
–13.5
.118
.121
.121
.123
.129
.130
.140
.155
.167
.174
.188
.192
.203
.213
2
2
4
6
8
8
11
11
14
11
7
3
–5
–13
.09
.10
.12
.14
.17
.20
.24
.27
.27
.27
.26
.25
.23
.24
–14
–29
–52
–70
–82
–92
–114
–134
–146
–159
–163
–162
–153
–160
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
14
12
Gain Flat to DC
14
TC = +125°C
50 TC = +25°C
TC = –55°C
12
8
6
G p (dB)
40
I d (mA)
G p (dB)
10
60
30
0
0
0.1
0.3 0.5
1.0
3.0
6.0
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
6
10
2
4
0
1
2
FREQUENCY (GHz)
3
4
5
6
15
20
25
35
40
50
Figure 3. Power Gain vs. Current.
Figure 2. Device Current vs. Voltage.
18
13
30
I d (mA)
Vd (V)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 35 mA.
7.0
12
15
GP
11
P1 dB
9
8
7
6.5
12
I d = 50 mA
NF (dB)
10
P1 dB (dBm)
11
P1 dB (dBm)
G p (dB)
8
20
4
NF (dB)
10
9
I d = 35 mA
6.0
6
5.5
6
I d = 20 mA
I d = 35 mA
I d = 50 mA
3
NF
5
4
–55
–25
+25
+85
+125
I d = 20 mA
0
0.1
0.2 0.3
5.0
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, Id = 35 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-308
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
3
1
2
.004 ± .002
.10 ± .05
GROUND
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
6-309