AGILENT MSA-0770

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0770
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
4.0 V Typical Vd
• 3 dB Bandwidth:
DC to 2.5 GHz
• 13.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic, Gold-ceramic
Microstrip Package
Description
The MSA-0770 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 5 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9592E
OUT
MSA
Vd = 4.0 V
6-398
70 mil Package
MSA-0770 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum[1]
60 mA
275 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 130°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.7 mW/°C for TC > 164°C.
4. Ths small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω
Units
Min.
12.5
GP
Power Gain (|S21| 2)
f = 0.1 GHz
dB
∆GP
Gain Flatness
f = 0.1 to 1.5 GHz
dB
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
GHz
Output VSWR
f = 0.1 to 2.5 GHz
50 Ω Noise Figure
f = 1.0 GHz
Max.
13.5
14.5
± 0.6
± 1.0
2.5
f = 0.1 to 2.5 GHz
NF
Typ.
2.0:1
1.6:1
dB
4.5
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
5.5
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
19.0
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
130
3.6
4.0
4.4
–7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
6-399
MSA-0770 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 22 mA)
S21
S11
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.04
.05
.06
.08
.10
.12
.20
.30
.37
.42
.46
.47
.47
.51
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
–7
–11
–24
–38
–48
–58
–82
–107
–123
–140
–154
–167
163
131
13.5
13.5
13.4
13.4
13.2
13.0
12.3
11.6
10.4
9.0
7.7
6.4
4.2
2.3
4.74
4.72
4.70
4.65
4.58
4.47
4.12
3.82
3.33
2.83
2.42
2.08
1.63
1.30
175
170
160
151
141
131
107
85
70
52
37
23
–1
–23
–18.6
–18.4
–18.4
–18.1
–17.8
–17.5
–16.6
–15.7
–15.3
–15.4
–15.4
–15.5
–15.5
–15.9
.118
.120
.121
.124
.133
.133
.148
.163
.171
.170
.170
.169
.167
.160
2
2
6
7
9
9
10
8
7
3
1
–4
–9
–11
.20
.19
.20
.21
.23
.23
.23
.22
.19
.20
.23
.29
.35
.38
–10
–18
–34
–50
–76
–76
–101
–116
–116
–111
–107
–107
–116
–133
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
14
40
12
30
8
Id (mA)
G p (dB)
10
6
16
TC = +125°C
TC = +25°C
TC = –55°C
G p (dB)
Gain Flat to DC
20
12
2.0 GHz
10
10
2
6
0
0
0.1
0.3 0.5
1.0
3.0
6.0
4
0
1
2
3
4
10
5
Figure 1. Typical Power Gain vs.
Frequency, Id = 22 mA.
6.0
I d = 40 mA
12
GP
4
6
P1 dB
I d = 15 mA
I d = 22 mA
I d = 40 mA
9
6
NF (dB)
5
P1 dB (dBm)
5.5
6
NF (dB)
NF
40
Figure 3. Power Gain vs. Current.
15
13
30
I d (mA)
Figure 2. Device Current vs. Voltage.
14
12
20
Vd (V)
FREQUENCY (GHz)
G p (dB)
0.1 GHz
0.5 GHz
1.0 GHz
8
4
P1 dB (dBm)
14
I d = 22 mA
5.0
3
4.5
5
0
4
3
–55 –25
I d = 15 mA
+25
+85
+125
–3
0.1
4.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=22mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-400
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
3
1
2
.004 ± .002
.10 ± .05
GROUND
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
6-401