AGILENT MSA-0420

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0420
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 4.0 GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• 16.0 dBm Typical P1 dB at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic Metal/Beryllia
Microstrip Package
Description
The MSA-0420 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 10 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9574E
OUT
MSA
Vd = 6.3 V
6-326
200 mil BeO Package
MSA-0420 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
120 mA
850 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 40°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 25 mW/°C for TC > 166°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of qjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 90 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Units
Min.
f = 0.1 GHz
dB
7.5
f = 0.1 to 2.5 GHz
dB
GHz
Typ.
Max.
8.5
9.5
± 0.6
± 1.0
4.3
f = 0.1 to 2.5 GHz
1.7:1
Output VSWR
f = 0.1 to 2.5 GHz
NF
50 Ω Noise Figure
f = 1.0 GHz
1.8:1
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
dB
V
mV/°C
6.5
14.0
16.0
30.0
140
5.7
6.3
6.9
–8.0
Note:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current
is on the following page.
6-327
MSA-0420 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 90 mA)
S21
S11
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.25
.25
.24
.22
.21
.20
.14
.10
.08
.10
.13
.14
.14
.16
177
173
167
160
154
148
136
136
161
178
176
163
133
91
8.6
8.6
8.6
8.5
8.5
8.3
8.1
7.9
7.4
7.0
6.6
5.9
5.3
4.5
2.70
2.69
2.69
2.67
2.66
2.60
2.54
2.48
2.34
2.24
2.13
1.97
1.83
1.69
175
170
159
149
139
129
104
80
62
39
18
–3
–23
–343
–16.4
–16.5
–16.5
–16.4
–16.3
–16.1
–15.6
–14.8
–14.3
–13.7
–12.6
–11.9
–11.3
–10.5
.151
.150
.150
.152
.154
.156
.166
.181
.193
.206
.233
.253
.273
.299
1
1
–1
–2
–2
–3
–4
–6
–5
–11
–18
–25
–33
–43
.03
.04
.07
.10
.13
.16
.22
.25
.28
.31
.34
.36
.37
.37
–30
–59
–79
–92
–99
–109
–124
–139
–147
–157
–167
–176
174
162
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
100
12
I d (mA)
8
Gain Flat to DC
6
80 T = –25°C
C
8
60
7
G p (dB)
10
G p (dB)
9
TC = +125°C
TC = +25°C
40
6
4
20
2
0.1
0.3 0.5
1.0
3.0
0
6.0
0
2
FREQUENCY (GHz)
21
12
9
8
7
7
6
70
18
9
110
7.5
I d = 110 mA
I d = 30 mA
I d = 110 mA
I d = 90 mA
Id= 60 mA
I d = 90 mA
15
12
90
6.5
I d = 60 mA
6.0
I d = 30 mA
6
NF
–25
NF (dB)
G p (dB)
GP
50
Figure 3. Power Gain vs. Current.
7.0
P1 dB (dBm)
P1 dB (dBm)
P1 dB
9
30
I d (mA)
24
14
5
–55
4
8
Figure 2. Device Current vs. Voltage.
18
8
6
Vd (V)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 90 mA.
16
4
NF (dB)
0
0.1 GHz
1.0 GHz
2.0 GHz
5
+25
+85
5
+125
6
0.1
5.5
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=90mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-328
200 mil BeO Package Dimensions
4
GROUND
.300 ± .025
7.62 ± .64
45°
.030
.76
3
1
RF OUTPUT
AND BIAS
RF INPUT
NO REFERENCE
GROUND
2
.060
1.52
.048 ± .010
1.21 ± .25
.128
3.25
.205
5.21
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.004 ± .002
.10 ± .05
.023
.57
6-329