AGILENT MSA-0636

Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0635, -0636
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 0.9 GHz
• High Gain:
19.0␣ dB Typical at 0.5 GHz
• Low Noise Figure:
2.8 dB Typical at 0.5 GHz
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0635 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0636.
Typical Biasing Configuration
R bias
VCC > 5 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9585E
OUT
MSA
Vd = 3.5 V
6-370
35 micro-X Package[1]
Note:
1. Short leaded 36 package available
upon request.
MSA-0635, -0636 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature[4]
Absolute Maximum[1]
50 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,5]:
θjc = 155°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 169°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Units
Min.
f = 0.1 GHz
dB
19.0
f = 0.1 to 2.5 GHz
dB
GHz
Output VSWR
f = 0.1 to 1.5 GHz
50 Ω Noise Figure
f = 0.5 GHz
Max.
20.5
22.0
± 0.7
± 1.0
0.9
f = 0.1 to 1.5 GHz
NF
Typ.
1.4:1
1.3:1
dB
2.8
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
2.0
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
14.5
tD
Group Delay
f = 0.5 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
4.0
200
3.1
3.5
3.9
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
6-371
MSA-0635, -0636 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.03
.02
.02
.02
.02
.04
.07
.10
.17
.24
.31
.37
.42
.46
.48
.52
–178
–177
–164
–116
–100
–89
–96
–108
–134
–160
–178
166
151
139
126
110
20.5
20.3
20.0
19.6
19.2
18.7
17.7
16.6
14.2
12.1
10.3
8.7
7.4
6.2
5.1
4.2
10.59
10.31
9.96
9.55
9.08
8.59
7.66
6.79
5.13
4.01
3.26
2.72
2.33
2.04
1.81
1.62
171
161
152
144
136
128
115
103
79
60
48
34
21
9
–3
–15
–23.4
–22.9
–22.4
–22.0
–21.8
–21.3
–20.2
–19.4
–17.2
–15.8
–15.1
–14.4
–13.9
–13.3
–12.8
–12.2
.068
.071
.076
.079
.081
.086
.098
.107
.138
.163
.175
.190
.203
.216
.229
.245
5
8
14
19
21
24
29
31
30
26
27
24
19
16
12
8
.04
.05
.06
.07
.09
.09
.10
.11
.12
.12
.12
.11
.10
.08
.08
.09
–44
–68
–87
–104
–114
–123
–140
–156
172
148
140
135
144
167
–173
–173
1.05
1.04
1.04
1.03
1.04
1.04
1.03
1.02
1.03
1.04
1.08
1.10
1.11
1.11
1.11
1.09
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
25
TC = +125°C
TC = +25°C
20 TC = –55°C
Gain Flat to DC
18
0.1 GHz
0.5 GHz
20
1.0 GHz
9
15
G p (dB)
12
Id (mA)
G p (dB)
15
10
15
2.0 GHz
10
6
5
5
3
0
0
0.1
0.3 0.5
1.0
3.0
6.0
0
0
1
2
20
25
30
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
4.0
I d = 30 mA
19
8
GP
5
4
NF
4
3
P1 dB
3
2
2
1
1
0
+25
+85
+125
NF (dB)
5
4
3.5
NF (dB)
18
P1 dB (dBm)
Gp (dB)
15
I d (mA)
20
17
P1 dB (dBm)
10
5
12
21
0
–55 –25
4
Vd (V)
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, Id = 16 mA.
3
I d = 20 mA
I d = 16 mA
3.0
2.5
0
I d = 12 mA
I d = 16 mA, 30 mA
I d = 20 mA
I d = 12 mA
-4
0.1
2.0
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id=16mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-372
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
A06
RF INPUT
1
3
.020
.508
2
.057 ± .010
1.45 ± .25
.022
.56
GROUND
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
6-373