Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0786 Features Description • Cascadable 50 Ω Gain Block The MSA-0786 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.0 GHz • 12.5␣ dB Typical Gain at 1.0␣ GHz • Unconditionally Stable (k>1) • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.” The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9594E OUT MSA Vd = 4.0 V 6-406 86 Plastic Package zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. MSA-0786 Absolute Maximum Ratings Absolute Maximum[1] 60 mA 275 mW +13 dBm 150°C –65 to 150°C Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Thermal Resistance[2,4]: θjc = 120°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8.3 mW/°C for TC > 117°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω Power Gain (|S21| 2) ∆GP Gain Flatness f3 dB 3 dB Bandwidth VSWR Units f = 0.1 GHz f = 1.0 GHz dB f = 0.1 to 1.3 GHz dB Min. Typ. 10.5 13.5 12.5 ± 0.7 GHz Input VSWR 2.0 f = 0.1 to 2.5 GHz Output VSWR f = 0.1 to 2.5 GHz NF 50 Ω Noise Figure f = 1.0 GHz Max. 1.7:1 1.7:1 dB 5.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 2.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 19.0 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 150 3.2 4.0 4.8 –7.0 Note: 1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0786-TR1 MSA-0786-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-407 MSA-0786 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 22 mA) S11 Freq. GHz Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 .05 .05 .04 .04 .05 .06 .08 .15 .25 .33 .41 .49 .60 S21 S12 S22 Ang dB Mag Ang dB Mag Ang Mag Ang 175 174 167 175 –156 –134 –142 –159 –176 166 150 137 116 13.5 13.4 13.3 13.1 12.9 12.6 11.6 10.5 9.2 7.8 6.5 5.2 3.0 4.74 4.71 4.64 4.52 4.39 4.25 3.79 3.34 2.89 2.45 2.11 1.82 1.41 174 169 158 148 138 127 103 80 63 44 27 12 –14 –18.7 –18.7 –18.4 –18.3 –18.0 –17.5 –16.6 –15.7 –15.1 –14.7 –14.9 –15.1 –15.4 .116 .117 .120 .122 .126 .134 .148 .164 .176 .185 .179 .177 .169 1 3 4 7 8 10 9 7 5 1 –5 –9 –14 .14 .14 .15 .16 .17 .18 .21 .23 .24 .24 .24 .23 .26 –12 –22 –44 –65 –84 –102 –139 –164 174 159 149 145 145 Note: 1. A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 14 30 TC = +85°C TC = +25°C TC = –25°C 13 12 GP NF 8 6 20 4 P1 dB (dBm) I d = 22 mA 10 I d = 40 mA 2 Gain Flat to DC 0 0 0.1 0.3 0.5 1.0 3.0 6.0 0 1 2 3 4 5 Vd (V) FREQUENCY (GHz) Figure 1. Typical Power Gain vs. Frequency. 6.5 I d = 40 mA 12 6.0 I d = 15 mA I d = 22 mA I d = 40 mA NF (dB) 9 I d = 22 mA 5.5 3 5.0 0 I d = 15 mA –3 0.1 4.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-408 P1 dB 6 5 4 –25 0 +25 +55 +85 TEMPERATURE (°C) Figure 2. Device Current vs. Voltage. 15 6 6 5 I d = 15 mA 4 P1 dB (dBm) 14 10 Id (mA) G p (dB) 12 Gp (dB) 40 Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=22mA. NF (dB) 16 86 Plastic Package Dimensions 0.51 ± 0.13 (0.020 ± 0.005) GROUND RF INPUT 1 A07 RF OUTPUT AND DC BIAS 45° GROUND 1.52 ± 0.25 (0.060 ± 0.010) 4 C L 3 2.34 ± 0.38 (0.092 ± 0.015) 2 2.67 ± 0.38 (0.105 ± 0.15) 5° TYP. 0.66 ± 0.013 (0.026 ± 0.005) 0.203 ± 0.051 (0.006 ± 0.002) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-409