AGILENT MSA-0786-TR1

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0786
Features
Description
• Cascadable 50 Ω Gain Block
The MSA-0786 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• Low Operating Voltage:
4.0 V Typical Vd
• 3 dB Bandwidth:
DC to 2.0 GHz
• 12.5␣ dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
Typical Biasing Configuration
R bias
VCC > 5 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9594E
OUT
MSA
Vd = 4.0 V
6-406
86 Plastic Package
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
MSA-0786 Absolute Maximum Ratings
Absolute Maximum[1]
60 mA
275 mW
+13 dBm
150°C
–65 to 150°C
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance[2,4]:
θjc = 120°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8.3 mW/°C for TC > 117°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
GP
Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω
Power Gain (|S21| 2)
∆GP
Gain Flatness
f3 dB
3 dB Bandwidth
VSWR
Units
f = 0.1 GHz
f = 1.0 GHz
dB
f = 0.1 to 1.3 GHz
dB
Min.
Typ.
10.5
13.5
12.5
± 0.7
GHz
Input VSWR
2.0
f = 0.1 to 2.5 GHz
Output VSWR
f = 0.1 to 2.5 GHz
NF
50 Ω Noise Figure
f = 1.0 GHz
Max.
1.7:1
1.7:1
dB
5.0
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
2.0
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
19.0
tD
Group Delay
f = 1.0 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
150
3.2
4.0
4.8
–7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0786-TR1
MSA-0786-BLK
No. of Devices
1000
100
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-407
MSA-0786 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 22 mA)
S11
Freq.
GHz
Mag
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
.05
.05
.04
.04
.05
.06
.08
.15
.25
.33
.41
.49
.60
S21
S12
S22
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
175
174
167
175
–156
–134
–142
–159
–176
166
150
137
116
13.5
13.4
13.3
13.1
12.9
12.6
11.6
10.5
9.2
7.8
6.5
5.2
3.0
4.74
4.71
4.64
4.52
4.39
4.25
3.79
3.34
2.89
2.45
2.11
1.82
1.41
174
169
158
148
138
127
103
80
63
44
27
12
–14
–18.7
–18.7
–18.4
–18.3
–18.0
–17.5
–16.6
–15.7
–15.1
–14.7
–14.9
–15.1
–15.4
.116
.117
.120
.122
.126
.134
.148
.164
.176
.185
.179
.177
.169
1
3
4
7
8
10
9
7
5
1
–5
–9
–14
.14
.14
.15
.16
.17
.18
.21
.23
.24
.24
.24
.23
.26
–12
–22
–44
–65
–84
–102
–139
–164
174
159
149
145
145
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
14
30
TC = +85°C
TC = +25°C
TC = –25°C
13
12
GP
NF
8
6
20
4
P1 dB (dBm)
I d = 22 mA
10
I d = 40 mA
2
Gain Flat to DC
0
0
0.1
0.3 0.5
1.0
3.0
6.0
0
1
2
3
4
5
Vd (V)
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency.
6.5
I d = 40 mA
12
6.0
I d = 15 mA
I d = 22 mA
I d = 40 mA
NF (dB)
9
I d = 22 mA
5.5
3
5.0
0
I d = 15 mA
–3
0.1
4.5
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-408
P1 dB
6
5
4
–25
0
+25
+55
+85
TEMPERATURE (°C)
Figure 2. Device Current vs. Voltage.
15
6
6
5
I d = 15 mA
4
P1 dB (dBm)
14
10
Id (mA)
G p (dB)
12
Gp (dB)
40
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=22mA.
NF (dB)
16
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
GROUND
RF INPUT
1
A07
RF OUTPUT
AND DC BIAS
45°
GROUND
1.52 ± 0.25
(0.060 ± 0.010)
4
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
2
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-409