Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0505 Features Description • Cascadable 50 Ω Gain Block The MSA-0505 is a high performance medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial systems. • High Output Power: 18.0 dBm Typical P1 dB at 1.0␣ GHz • Low Distortion: 29.0 dBm Typical IP3 at 1.0␣ GHz • 7.0 dB Typical Gain at 1.0␣ GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Semiconductor Devices.” The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9581E OUT MSA Vd = 8.4 V 6-354 05 Plastic Package MSA-0505 Absolute Maximum Ratings Absolute Maximum[1] 135 mA 1.5 W +25 dBm 200°C –65 to 150°C Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Electrical Specifications[1], TA = 25°C Symbol P1 dB GP Parameters and Test Conditions: Id = 80 mA, ZO = 50 Ω Output Power at 1 dB Gain Compression Power Gain (|S21| 2) ∆GP Gain Flatness f3 dB 3 dB Bandwidth[2] VSWR Thermal Resistance[2,4]: θjc = 85°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 11.8 mW/°C for TC > 73°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Units Min. Typ. f = 0.5 GHz f = 1.0 GHz dBm dBm 16.0 19.0 18.0 f = 0.5 GHz f = 1.0 GHz dB 6.0 7.5 7.0 f = 0.1 to 1.5 GHz dB ± 0.75 GHz 2.3 Input VSWR f = 0.1 to 1.5 GHz 1.6:1 Output VSWR f = 0.1 to 1.5 GHz 2.0:1 IP3 Third Order Intercept Point f = 1.0 GHz dBm 29.0 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C Max. 190 6.7 8.4 10.1 –16.0 Notes: 1. The recommended operating current range for this device is 60 to 100 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz Gain (GP). Part Number Ordering Information Part Number MSA-0505-TR1 MSA-0505-STR No. of Devices 500 10 Container 7" Reel Strip For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 6-355 MSA-0505 Typical Scattering Parameters (TA = 25°C, Id = 80 mA) S11 S21 S12 S22 Freq. MHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 5 25 50 100 200 400 600 800 1000 1500 2000 2500 3000 .56 .24 .15 .13 .12 .12 .13 .13 .14 .21 .30 .40 .52 –39 –103 –130 –155 –170 178 172 168 166 159 148 136 121 14.9 9.7 8.2 7.8 7.7 7.5 7.4 7.2 7.0 6.4 5.2 4.1 2.7 5.56 3.05 2.57 2.45 3.43 2.37 2.34 2.29 2.24 2.09 1.82 1.60 1.36 161 156 163 165 161 148 134 119 105 72 42 17 –7 –18.5 –13.9 –13.7 –13.7 –13.5 –13.6 –13.6 –13.6 –13.4 –13.3 –13.1 –12.9 –12.6 .120 .202 .207 .207 .211 .209 .209 .209 .213 .217 .222 .227 .234 39 12 7 3 1 –1 –2 –3 –4 –6 –9 –11 –16 .65 .25 .15 .11 .11 .14 .17 .21 .25 .34 .42 .48 .55 –36 –90 –116 –132 –145 –146 –151 –157 –164 176 159 146 133 0.60 0.97 1.15 1.21 1.21 1.23 1.23 1.23 1.21 1.16 1.12 1.05 0.92 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 10 120 8 90 20 0.5 GHz 4 P1 dB (dBm) 0.1 GHz 6 Id (mA) GAIN (dB) 22 TC = +85°C TC = +25°C TC = –25°C 60 1.0 GHz 1.5 GHz 2.0 GHz 2 0.5 GHz 18 1.0 GHz 16 30 14 2.0 GHz 0 0 8 10 12 14 16 18 20 22 0 24 3 9 12 Vd (V) POWER OUT (dBm) Figure 1. Typical Gain vs. Power Out, TA = 25°C, Id = 80 mA. 34 IP3 (dBm) 12 10 30 IP3 26 8 22 P1 dB (dBm) 6 4 2 0 .01 .05 0.1 0.5 1.0 FREQUENCY (GHz) Figure 4. Gain vs. Frequency, Id = 80 to 100 mA. 5.0 18 14 60 P1 dB 70 80 90 100 Id (mA) Figure 5. Output Power at 1 dB Gain Compression, Third Order Intercept vs. Case Temperature, f = 1.0 GHz. 6-356 12 –25 0 +25 +85 TEMPERATURE (°C) Figure 2. Device Current vs. Voltage. 14 Gp (dB) 6 Figure 3. Output Power at 1 dB Gain Compression, vs. Case Temperature, Id = 80 mA. 05 Plastic Package Dimensions 4 GROUND 0.030 DIA 0.76 0.030 0.89 RF OUTPUT AND DC BIAS RF INPUT 5 3 1 0.030 ± 0.010 0.76 ± 0.25 (4 PLCS) GROUND 0.135 ± 0.015 3.42 ± 0.25 (4 PLCS) 0.020 0.51 0.145 3.68 0.008 ± 0.002 0.20 ± 0.05 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 2 0.030 0.76 0.050 1.27 0.100 ± 0.010 2.54 ± 0.25 0.0005 ± 0.010 (0.013 ± 0.25) 6-357