1/2 GM BT5551 NP N E PITAXI AL P L ANAR T RANS ISTO R Description The GMBT5551 is designed for general purpose applications requiring high breakdown voltages. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 180 V Collector to Emitter Voltage VCES 160 V Emitter to Base Voltage VEBO 6.0 V Collector Current IC 600 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 180 - - V IC=100uA BVCEO 160 - - V IC=1mA BVEBO 6 - - V IE=10uA ICBO - - 50 nA VCB=120V IEBO - - 50 nA VEB=4V VCE(sat)1 - - 150 mV IC=10mA, IB=1mA VCE(sat)2 - - 200 mV IC=50mA, IB=5mA VBE(sat)1 - - 1 V IC=10mA, IB=1mA VBE(sat)2 - - 1 V IC=50mA, IB=5mA hFE1 80 - - hFE2 80 - 250 VCE=5V, IC=10mA hFE3 30 - - VCE=5V, IC=50mA fT 100 Cob - - Test Conditions VCE=5V, IC=1mA 300 MHz 6 pF VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165