1/2 GM8550 P N P E P I TA X I A L T R A N S I S T O R Description The GM8550 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Package Dimensions A Millimeter Min. Max. 4.4 4.6 Millimeter Min. Max. 3.00 REF. G B 4.05 4.25 H C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 F 0.89 1.20 L 5 M 0.70 REF. 1.50 REF. 0.41 TYP. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage BVCBO -40 V Collector to Emitter Voltage BVCEO -25 V Emitter to Base Voltage BVEBO -6 V Collector Current IC -1.5 A Base Current IB -0.5 A Total Power Dissipation PD 1 W Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit Test Conditions BVCBO -40 - - V IC=-100uA BVCEO -25 - - V IC=-2mA BVEBO -6 - - V IE=-100uA ICBO - - -100 nA VCB=-35V IEBO - - -100 nA VEB=-6V VCE(sat) - - -0.5 V IC=-0.8A, IB=-80mA - - hfe1 45 - - hfe2 120 - 500 hfe3 40 - - fT 100 - - VBE(sat) VBE(on) -1.2 V IC=-0.8A, IB=-80mA -1 V VCE=-1V, IC=-10mA VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA MHz Classification Of hFE Rank C D E hFE 120 - 200 160 - 300 250 - 500 VCE=-10V, IC=-20mA, f=100MHz 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX :86- 21-38950165