Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02184 INA-02186 Features • Cascadable 50 Ω Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz 26 dB Typical at 1.5 GHz • 3 dB Bandwidth: DC to 0.8 GHz • Unconditionally Stable (k>1) • Low Cost Plastic Package Description The INA-02184 and INA-02186 are low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifiers housed in low cost plastic packages. They are designed for narrow or wide bandwidth commercial applications that require high gain and low noise IF or RF amplification. The INA series of MMICs is fabricated using HP’s 10 GHz fT, 25 GHz fMAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. Typical Biasing Configuration VCC RFC (Optional) Rbias 4 Cblock RF IN Cblock 3 1 2 RF OUT Vd = 5.5 V Package 84 Package 86 2 INA-02184, -02186 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation [2,3,4] RF Input Power Junction Temperature Storage Temperature Thermal Resistance[2]: θjc = 90°C/W — INA-02184 θjc = 100°C/W — INA-02186 50 mA 400 mW +13 dBm +150°C –65 to 150°C Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 11.1 mW/°C for TC > 144°C for INA-02184. 4. Derate at 10 mW/°C for TC > 110°C for INA-02186. INA-02184, -02186 Electrical Specifications[1], TA = 25°C INA-02184 INA-02186 Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω Units Min. Typ. Max. Min. Typ. Max. GP Power Gain (|S21| 2) f = 0.5 GHz ∆GP Gain Flatness f = 0.01 to 1.0 GHz f3 dB 3 dB Bandwidth[2] ISO VSWR Reverse Isolation (|S12| 2) f = 0.01 to 1.0 GHz Input VSWR (Max over Freq. Range) dB 29.0 31.0 29.0 31.0 dB ±2.0 ±2.0 GHz 0.8 0.8 dB f = 0.01 to 1.0 GHz 39 39 1.5 2.0 Output VSWR (Max over Freq. Range) f = 0.01 to 1.0 GHz 1.7 1.7 NF 50 Ω Noise Figure f = 0.5 GHz dB 2.0 2.0 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 11 11 IP3 Third Order Intercept Point f = 0.5 GHz dBm 23 23 tD Group Delay f = 0.5 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 330 4.0 5.5 +10 350 7.0 4.0 5.5 7.0 +10 Notes: 1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current is on the following page. 2. Referenced from 10 MHz Gain (GP). INA-02184, -02186 Part Number Ordering Information Part Number No. of Devices Container INA-02184-TR1 INA-02184-BLK 1000 100 7" Reel Antistatic Bag INA-02186-TR1 INA-02186-BLK 1000 100 7" Reel Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. 3 INA-02184, -02186 Typical Performance, TA = 25°C (unless otherwise noted) 35 35 50 3.5 Gain Flat to DC TC = +85°C TC = +25°C TC = –25°C 40 2.5 20 30 30 Gp (dB) 25 Id (mA) 3.0 NF (dB) Gp (dB) 30 0.1 GHz 0.5 GHz 20 2.0 1.0 GHz 1.5 GHz 25 20 10 15 .01 .02 .05 0.1 0.2 0.5 1.0 1.5 2.0 15 20 0 0 2 4 6 8 Vd (V) Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25°C, Id = 35 mA. Figure 2. Device Current vs. Voltage. Id = 35 mA 9 NF (dB) 9 NF P1 dB (dBm) 13 P1 dB (dBm) Gp (dB) 3.0 P1 dB 2.5 NF (dB) 3.5 12 11 Id = 30 mA 2.5 6 2.0 2.0 Id = 30 to 40 mA 3 1.5 –55 –25 +25 +85 +125 0 .02 .05 TEMPERATURE (°C) 0.1 0.2 0.5 1.0 2.0 FREQUENCY (GHz) Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 0.5 GHz, Id = 35 mA. 2.00:1 2.00:1 INA-02184 INA-02186 1.75:1 1.75:1 1.50:1 1.50:1 1.25:1 1.25:1 .05 0.1 0.2 0.5 1.0 2.0 FREQUENCY (GHz) Figure 7. Input VSWR vs. Frequency, Id = 35 mA. 1.00:1 .02 .05 0.1 0.2 0.5 1.5 .02 .05 0.1 0.2 0.5 1.0 2.0 FREQUENCY (GHz) Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. INA-02184 INA-02186 1.00:1 .02 50 Id = 40 mA Gp 31 30 40 Figure 3. Power Gain vs. Current. 15 32 30 Id (mA) FREQUENCY (GHz) 1.0 2.0 FREQUENCY (GHz) Figure 8. Output VSWR vs. Frequency, Id = 35 mA. Figure 6. Noise Figure vs. Frequency. 4 Typical INA-02184 Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA) Freq. GHz Mag S11 Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.01 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 3.50 4.00 .09 .09 .10 .13 .15 .18 .19 .20 .19 .17 .15 .15 .16 .18 .19 .23 .27 .30 .33 –176 –171 –163 –159 –161 –168 –175 179 166 159 159 163 168 168 165 159 150 143 133 31.9 31.9 31.8 31.7 31.4 31.2 31.0 30.7 29.9 28.4 26.8 24.8 22.6 20.7 18.8 14.9 11.5 8.8 6.6 39.33 39.24 39.07 38.30 37.30 36.42 35.40 34.20 31.21 26.36 21.89 17.36 13.59 10.86 8.71 5.56 3.76 2.74 2.14 –1 –6 –13 –26 –39 –51 –63 –75 –101 –126 –149 –169 175 161 149 127 106 89 73 –40.0 –41.9 –40.9 –40.0 –38.4 –39.2 –40.0 –37.1 –38.4 –36.5 –34.0 –33.2 –31.4 –31.1 –30.2 –29.1 –27.1 –26.0 –25.0 .010 .008 .009 .010 .012 .011 .010 .014 .012 .015 .020 .022 .027 .028 .031 .035 .044 .050 .056 1 –12 1 15 16 32 34 35 38 53 56 62 67 61 64 56 65 57 62 .25 .25 .25 .23 .22 .21 .21 .21 .24 .24 .22 .18 .14 .11 .08 .05 .04 .04 .05 –1 –4 –8 –13 –17 –15 –16 –17 –26 –41 –60 –78 –93 –108 –125 –167 156 137 137 1.40 1.66 1.52 1.44 1.29 1.39 1.52 1.24 1.44 1.40 1.31 1.50 1.50 1.74 1.92 2.54 2.89 3.39 3.78 Typical INA-02186 Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA) Freq. GHz Mag S11 Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.01 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 3.50 4.00 .09 .09 .11 .14 .18 .22 .25 .28 .31 .30 .27 .24 .21 .20 .20 .23 .27 .31 .34 –178 –172 –160 –153 –156 –161 –169 –177 165 148 135 129 128 129 131 133 130 124 118 31.5 31.5 31.5 31.4 31.3 31.2 31.1 30.9 30.2 28.8 27.0 24.7 22.5 20.4 18.4 14.5 11.2 8.3 6.1 37.38 37.55 37.46 37.04 36.62 36.20 35.70 34.94 32.34 27.64 22.26 17.22 13.27 10.42 8.34 5.29 3.61 2.60 2.02 –1 –6 –13 –25 –37 –49 –61 –74 –101 –129 –153 –173 170 156 144 123 103 86 70 –40.0 –37.7 –39.2 –40.9 –38.4 –37.7 –39.2 –38.4 –36.5 –34.4 –32.4 –31.1 –31.4 –29.1 –29.1 –27.1 –25.7 –24.4 –23.4 .010 .013 .011 .009 .012 .013 .011 .012 .015 .019 .024 .028 .027 .035 .035 .044 .052 .060 .068 1 11 8 15 1 28 42 44 52 57 62 61 62 61 63 59 63 64 58 .24 .24 .23 .22 .21 .19 .18 .16 .15 .12 .09 .07 .04 .02 .01 .02 .02 .02 .01 –1 –5 –9 –17 –25 –30 –35 –39 –47 –59 –70 –80 –82 –83 –20 30 27 34 30 1.46 1.22 1.37 1.60 1.30 1.25 1.40 1.33 1.20 1.15 1.15 1.23 1.52 1.50 1.79 2.15 2.56 2.97 3.28 5 Emitter Inductance and Performance reflection coefficient greater than unity) at the input of the MMIC. As a direct result of their circuit topology, the performance of INA MMICs is extremely sensitive to groundpath (“emitter”) inductance. The two stage design creates the possibility of a feedback loop being formed through the ground returns of the stages. If the path to ground provided by the external circuit is “long” (high in impedance) compared to the path back through the ground return of the other stage, then instability can occur (see Fig. 1). This phenomena can show up as a “peaking” in the gain versus frequency response (perhaps creating a negative gain slope amplifier), an increase in input VSWR, or even as return gain (a The “bottomline” is that excellent grounding is critical when using INA MMICs. The use of plated through holes or equivalent minimal path ground returns at the device is essential. An appropriate layout is shown in Figure 2. A corollary is that designs should be done on the thinnest practical substrate. The parasitic inductance of a pair of via holes passing through 0.032" thick P.C. board is approximately 0.1 nH, while that of a pair of via holes passing through 0.062" thick board is close to 0.5 nH. HP does not recommend using INA family MMICs on boards thicker than 32 mils. Figure 1. INA Potential Ground Loop. These stability effects are entirely predictable. A circuit simulation using the data sheet S-parameters and including a description of the ground return path (via model or equivalent “emitter” inductance) will give an accurate picture of the performance that can be expected. Device characterizations are made with the ground leads of the MMIC directly contacting a solid copper block (system ground) at a distance of 2 to 4 mils from the body of the package. Thus the information in the data sheet is a true description of the performance capability of the MMIC, and contains minimal contributions from fixturing. Figure 2. INA Circuit Board 2x Actual Size. Package 86 Dimensions 0.51 (0.020) 4 GROUND N02 RF INPUT 1 0.51 ± 0.13 (0.020 ± 0.005) 4 RF OUTPUT AND DC BIAS 45° 3 1 2 N02 Package 84 Dimensions C L 3 2.34 ± 0.38 (0.092 ± 0.015) GROUND 2 2.15 (0.085) 2.67 ± 0.38 (0.105 ± 0.15) 1.52 ± 0.25 (0.060 ± 0.010) 5° TYP. 5° 0.20 ± 0.050 (0.008 ± 0.002) 1.52 ± 0.25 (0.060 ± 0.010) 0.51 (0.020) 5.46 ± 0.25 (0.215 ± 0.010) DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.66 ± 0.013 (0.026 ± 0.005) 0.203 ± 0.051 (0.006 ± 0.002) 8° MAX 0° MIN 2.16 ± 0.13 (0.085 ± 0.005) 0.30 MIN (0.012 MIN) DIMENSIONS ARE IN MILLIMETERS (INCHES) For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright © 1997 Hewlett-Packard Co. Printed in U.S.A. 5965-9675E (9/97)