AGILENT INA-02186-TR1

Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-02184
INA-02186
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31 dB Typical at 0.5 GHz
26 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 0.8 GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
Description
The INA-02184 and INA-02186 are
low-noise silicon bipolar Monolithic Microwave Integrated
Circuit (MMIC) feedback amplifiers housed in low cost plastic
packages. They are designed for
narrow or wide bandwidth
commercial applications that
require high gain and low noise IF
or RF amplification.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielectric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Typical Biasing Configuration
VCC
RFC (Optional)
Rbias
4
Cblock
RF IN
Cblock
3
1
2
RF OUT
Vd = 5.5 V
Package 84
Package 86
2
INA-02184, -02186 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation [2,3,4]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance[2]:
θjc = 90°C/W — INA-02184
θjc = 100°C/W — INA-02186
50 mA
400 mW
+13 dBm
+150°C
–65 to 150°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 11.1 mW/°C for TC >
144°C for INA-02184.
4. Derate at 10 mW/°C for TC > 110°C
for INA-02186.
INA-02184, -02186 Electrical Specifications[1], TA = 25°C
INA-02184
INA-02186
Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω Units Min. Typ. Max. Min. Typ. Max.
GP
Power Gain (|S21| 2)
f = 0.5 GHz
∆GP
Gain Flatness
f = 0.01 to 1.0 GHz
f3 dB
3 dB Bandwidth[2]
ISO
VSWR
Reverse Isolation
(|S12| 2)
f = 0.01 to 1.0 GHz
Input VSWR (Max over Freq. Range)
dB
29.0 31.0
29.0 31.0
dB
±2.0
±2.0
GHz
0.8
0.8
dB
f = 0.01 to 1.0 GHz
39
39
1.5
2.0
Output VSWR (Max over Freq. Range)
f = 0.01 to 1.0 GHz
1.7
1.7
NF
50 Ω Noise Figure
f = 0.5 GHz
dB
2.0
2.0
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
11
11
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
23
23
tD
Group Delay
f = 0.5 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
330
4.0
5.5
+10
350
7.0
4.0
5.5
7.0
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 10 MHz Gain (GP).
INA-02184, -02186 Part Number Ordering Information
Part Number
No. of Devices
Container
INA-02184-TR1
INA-02184-BLK
1000
100
7" Reel
Antistatic Bag
INA-02186-TR1
INA-02186-BLK
1000
100
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
3
INA-02184, -02186 Typical Performance, TA = 25°C
(unless otherwise noted)
35
35
50
3.5
Gain Flat to DC
TC = +85°C
TC = +25°C
TC = –25°C
40
2.5
20
30
30
Gp (dB)
25
Id (mA)
3.0
NF (dB)
Gp (dB)
30
0.1 GHz
0.5 GHz
20
2.0
1.0 GHz
1.5 GHz
25
20
10
15
.01 .02
.05
0.1 0.2
0.5
1.0
1.5
2.0
15
20
0
0
2
4
6
8
Vd (V)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA.
Figure 2. Device Current vs. Voltage.
Id = 35 mA
9
NF (dB)
9
NF
P1 dB (dBm)
13
P1 dB (dBm)
Gp (dB)
3.0
P1 dB
2.5
NF (dB)
3.5
12
11
Id = 30 mA
2.5
6
2.0
2.0
Id = 30 to 40 mA
3
1.5
–55
–25
+25
+85
+125
0
.02
.05
TEMPERATURE (°C)
0.1
0.2
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz, Id = 35 mA.
2.00:1
2.00:1
INA-02184
INA-02186
1.75:1
1.75:1
1.50:1
1.50:1
1.25:1
1.25:1
.05
0.1
0.2
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 7. Input VSWR vs. Frequency,
Id = 35 mA.
1.00:1
.02
.05
0.1
0.2
0.5
1.5
.02
.05
0.1
0.2
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
INA-02184
INA-02186
1.00:1
.02
50
Id = 40 mA
Gp
31
30
40
Figure 3. Power Gain vs. Current.
15
32
30
Id (mA)
FREQUENCY (GHz)
1.0
2.0
FREQUENCY (GHz)
Figure 8. Output VSWR vs. Frequency,
Id = 35 mA.
Figure 6. Noise Figure vs. Frequency.
4
Typical INA-02184 Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
Freq.
GHz
Mag
S11
Ang
dB
S21
Mag
Ang
dB
S12
Mag
Ang
Mag
S22
Ang
k
0.01
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
3.50
4.00
.09
.09
.10
.13
.15
.18
.19
.20
.19
.17
.15
.15
.16
.18
.19
.23
.27
.30
.33
–176
–171
–163
–159
–161
–168
–175
179
166
159
159
163
168
168
165
159
150
143
133
31.9
31.9
31.8
31.7
31.4
31.2
31.0
30.7
29.9
28.4
26.8
24.8
22.6
20.7
18.8
14.9
11.5
8.8
6.6
39.33
39.24
39.07
38.30
37.30
36.42
35.40
34.20
31.21
26.36
21.89
17.36
13.59
10.86
8.71
5.56
3.76
2.74
2.14
–1
–6
–13
–26
–39
–51
–63
–75
–101
–126
–149
–169
175
161
149
127
106
89
73
–40.0
–41.9
–40.9
–40.0
–38.4
–39.2
–40.0
–37.1
–38.4
–36.5
–34.0
–33.2
–31.4
–31.1
–30.2
–29.1
–27.1
–26.0
–25.0
.010
.008
.009
.010
.012
.011
.010
.014
.012
.015
.020
.022
.027
.028
.031
.035
.044
.050
.056
1
–12
1
15
16
32
34
35
38
53
56
62
67
61
64
56
65
57
62
.25
.25
.25
.23
.22
.21
.21
.21
.24
.24
.22
.18
.14
.11
.08
.05
.04
.04
.05
–1
–4
–8
–13
–17
–15
–16
–17
–26
–41
–60
–78
–93
–108
–125
–167
156
137
137
1.40
1.66
1.52
1.44
1.29
1.39
1.52
1.24
1.44
1.40
1.31
1.50
1.50
1.74
1.92
2.54
2.89
3.39
3.78
Typical INA-02186 Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
Freq.
GHz
Mag
S11
Ang
dB
S21
Mag
Ang
dB
S12
Mag
Ang
Mag
S22
Ang
k
0.01
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
3.50
4.00
.09
.09
.11
.14
.18
.22
.25
.28
.31
.30
.27
.24
.21
.20
.20
.23
.27
.31
.34
–178
–172
–160
–153
–156
–161
–169
–177
165
148
135
129
128
129
131
133
130
124
118
31.5
31.5
31.5
31.4
31.3
31.2
31.1
30.9
30.2
28.8
27.0
24.7
22.5
20.4
18.4
14.5
11.2
8.3
6.1
37.38
37.55
37.46
37.04
36.62
36.20
35.70
34.94
32.34
27.64
22.26
17.22
13.27
10.42
8.34
5.29
3.61
2.60
2.02
–1
–6
–13
–25
–37
–49
–61
–74
–101
–129
–153
–173
170
156
144
123
103
86
70
–40.0
–37.7
–39.2
–40.9
–38.4
–37.7
–39.2
–38.4
–36.5
–34.4
–32.4
–31.1
–31.4
–29.1
–29.1
–27.1
–25.7
–24.4
–23.4
.010
.013
.011
.009
.012
.013
.011
.012
.015
.019
.024
.028
.027
.035
.035
.044
.052
.060
.068
1
11
8
15
1
28
42
44
52
57
62
61
62
61
63
59
63
64
58
.24
.24
.23
.22
.21
.19
.18
.16
.15
.12
.09
.07
.04
.02
.01
.02
.02
.02
.01
–1
–5
–9
–17
–25
–30
–35
–39
–47
–59
–70
–80
–82
–83
–20
30
27
34
30
1.46
1.22
1.37
1.60
1.30
1.25
1.40
1.33
1.20
1.15
1.15
1.23
1.52
1.50
1.79
2.15
2.56
2.97
3.28
5
Emitter Inductance and
Performance
reflection coefficient greater than
unity) at the input of the MMIC.
As a direct result of their circuit
topology, the performance of INA
MMICs is extremely sensitive to
groundpath (“emitter”) inductance. The two stage design
creates the possibility of a feedback loop being formed through
the ground returns of the stages. If
the path to ground provided by
the external circuit is “long” (high
in impedance) compared to the
path back through the ground
return of the other stage, then
instability can occur (see Fig. 1).
This phenomena can show up as a
“peaking” in the gain versus
frequency response (perhaps
creating a negative gain slope
amplifier), an increase in input
VSWR, or even as return gain (a
The “bottomline” is that excellent
grounding is critical when
using INA MMICs. The use of
plated through holes or equivalent
minimal path ground returns at
the device is essential. An
appropriate layout is shown in
Figure 2. A corollary is that
designs should be done on the
thinnest practical substrate. The
parasitic inductance of a pair of
via holes passing through 0.032"
thick P.C. board is approximately
0.1 nH, while that of a pair of via
holes passing through 0.062" thick
board is close to 0.5 nH. HP does
not recommend using INA family
MMICs on boards thicker than
32 mils.
Figure 1. INA Potential
Ground Loop.
These stability effects are entirely
predictable. A circuit simulation
using the data sheet S-parameters
and including a description of the
ground return path (via model or
equivalent “emitter” inductance)
will give an accurate picture of the
performance that can be expected. Device characterizations
are made with the ground leads of
the MMIC directly contacting a
solid copper block (system
ground) at a distance of 2 to 4 mils
from the body of the package.
Thus the information in the data
sheet is a true description of the
performance capability of the
MMIC, and contains minimal
contributions from fixturing.
Figure 2. INA Circuit Board 2x
Actual Size.
Package 86 Dimensions
0.51 (0.020)
4
GROUND
N02
RF INPUT
1
0.51 ± 0.13
(0.020 ± 0.005)
4
RF OUTPUT
AND DC BIAS
45°
3
1
2
N02
Package 84 Dimensions
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
GROUND
2
2.15
(0.085)
2.67 ± 0.38
(0.105 ± 0.15)
1.52 ± 0.25
(0.060 ± 0.010)
5° TYP.
5°
0.20 ± 0.050
(0.008 ± 0.002)
1.52 ± 0.25
(0.060 ± 0.010)
0.51
(0.020)
5.46 ± 0.25
(0.215 ± 0.010)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
For technical assistance or the location of
your nearest Hewlett-Packard sales office,
distributor or representative call:
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Europe: Call your local HP sales office.
Data subject to change.
Copyright © 1997 Hewlett-Packard Co.
Printed in U.S.A.
5965-9675E (9/97)