HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching applications. Features TO-126ML • High breakdown voltage • Low collector saturation voltage • Fast switching speed Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 10 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................................................... 600 V BVCEO Collector to Emitter Voltage.................................................................................................................... 400 V BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V IC Collector Current (DC) ............................................................................................................................... 800 mA IC Collector Current (Pulse).......................................................................................................................... 1600 mA IB Base Current (DC)...................................................................................................................................... 100 mA IB Base Current (Pulse).................................................................................................................................. 200 mA Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit BVCBO 600 - - V IC=100uA BVCEO 400 - - V IC=10mA BVEBO 6 - - V IE=10uA ICBO - - 10 uA VCB=600V ICEO - - 10 uA VCE=400V IEBO - - 10 uA VEB=6V *VCE(sat)1 - - 400 mV IC=100mA, IB=20mA *VCE(sat)2 - - 800 mV IC=300mA, IB=60mA *VBE(sat) - - 1 V IC=100mA, IB=20mA *hFE1 10 - 40 VCE=10V, IC=0.1A *hFE2 10 - - VCE=10V, IC=0.5A tf - - 0.6 uS Test Conditions VCC=100V, IC=0.3A, IB1=-IB2=0.06A *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE1 Rank B1 B2 B3 B4 B5 B6 Range 10-17 13-22 18-27 23-32 28-37 33-40 HLB122D HSMC Product Specification HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Saturation Voltage & Collector Current Current Gain & Collector Current 100 10000 VCE(sat) @ IC=5IB o Saturation Voltage (mV) 125 C o 25 C hFE o 75 C 10 hFE @ VCE=10V 1 1000 o 75 C o 100 125 C o 25 C 10 1 10 100 1000 Collector Current-IC (mA) 1 10 100 1000 Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 o Saturation Voltage (mV) 25 C o 75 C o 125 C VBE(s at) @ IC=5IB 100 1 10 100 1000 Collector Current-IC (mA) HLB122D HSMC Product Specification HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 3/4 MICROELECTRONICS CORP. TO-126ML Dimension A C DIM A B C D E F G H I J K L M N Marking: L Pb Free Mark D H LB 1 2 2D E Pb-Free: " . " (Note) Normal: None I Date Code B 1 2 Control Code Note: Green label is used for pb-free packing 3 Pin Style: 1.Emitter 2.Collector 3.Base F H Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 M G K J N Min. 7.74 10.87 0.88 1.28 3.50 2.61 13 1.18 2.88 0.68 3.44 1.88 0.50 Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 2.30 3.70 2.14 0.51 *: Typical, Unit: mm 3-Lead TO-126ML Plastic Package HSMC Package Code: D Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB122D HSMC Product Specification HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HLB122D o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification