HI-SINCERITY Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HT666 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications. TO-92 Features • High Frequency Current Gain • High Speed Switching Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) BVCBO Collector to Base Voltage......................................................................................................................... 75 V BVCEO Collector to Emitter Voltage...................................................................................................................... 40 V BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V IC Collector Current ........................................................................................................................................ 600 mA Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit BVCBO 75 - - V IC=10uA Test Conditions *BVCEO 40 - - V IC=100mA BVEBO 6 - - V IE=10uA ICBO - - 10 nA VCB=60V ICEX - - 10 nA VCB=60V, VEB(off)=3V IEBO - - 50 nA VEB=3V *VCE(sat)1 - - 300 mV IC=150mA, IB=15mA *VCE(sat)2 - - 1 V IC=500mA, IB=50mA *VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA *VBE(sat)2 - - 2 V IC=500mA, IB=50mA *hFE1 35 - - - VCE=10V, IC=100uA *hFE2 50 - - - VCE=10V, IC=1mA *hFE3 75 - - - VCE=10V, IC=10mA *hFE4 100 300 - VCE=10V, IC=150mA *hFE5 40 - - - VCE=10V, IC=500mA *hFE6 50 - - - fT 300 - - MHz VCE=1V, IC=150mA IC=20mA, VCE=20V, f=100MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HT666 HSMC Product Specification HI-SINCERITY Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve DC Current Gain Gain Bandwidth Product & Collector Current 1000 Gain Bandwidth Product (MHz) 10000 hFE 100 10 1000 100 10 1 1 10 100 1 1000 10 Collector Current (mA) Collector current (mA) Collector-Emitter Saturation Voltage 100 Total Power Dissipation & Ambient Temperature 10.0 Total Power Dissipation (mW) Saturation Voltage (V) 800 1.0 0.1 600 400 200 0 0.0 1 10 100 1000 Collector Current (mA) 0 25 50 75 100 125 150 175 200 Ta-Ambient Temperature Base-Emitter Saturation Voltage V(BE) Saturation Voltage 10 1 0.1 1 10 100 1000 Collector current (mA) HT666 HSMC Product Specification HI-SINCERITY Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 3/4 MICROELECTRONICS CORP. TO-92 Dimension A Pb Free Mark Pb-Free: " . " (Note) Normal: None B 1 DIM A B C D E F G H I α1 α2 α3 Marking: α2 2 H 6 6 6 T 3 Control Code Date Code α3 Note: Green label is used for pb-free packing C Pin Style: 1.Emitter 2.Collector 3.Base D H Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 G Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5° *2° *2° *: Typical, Unit: mm α1 I E F 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension H2 H2A H2A H2 D2 A H3 H4 H L L1 H1 W1 W D1 F1F2 T2 T T1 P1 P P2 D DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HT666 HSMC Product Specification HI-SINCERITY Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HT666 o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification