HSMC HSB647A

HI-SINCERITY
Spec. No. : HA200201
Issued Date : 2002.01.01
Revised Date : 2005.02.14
Page No. : 1/4
MICROELECTRONICS CORP.
HSB647A
SILICON PNP EPITAXIAL
Description
Low Frequency Power Amplifier Complementary Pair With HSD667A.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 900 mW
• Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................ -120 V
VCEO Collector to Emitter Voltage ..................................................................................................................... -100 V
VEBO Emitter to Base Voltage ............................................................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................................................... -1 A
ICP Collector Current (Peak) ................................................................................................................................. -2 A
Electrical Characteristics (TA=25°C)
Symbol
Parameter
Min. Typ. Max. Unit
Test Conditions
BVCBO
Collector to Base Breakdown Voltage
-120
-
-
V
IC=-100uA, IE=0
BVCEO
Collector to Emitter Breakdown Voltage
-100
-
-
V
IC=-1mA, RBE=∞
BVEBO
Emitter to Base Breakdown Voltage
-5
-
-
V
IE=-10uA, IC=0
Collector Cutoff Current
-
-
-10
uA
VCB=-100V, IE=0
*VCE(sat)
Collector to Emitter Saturation Voltage
-
-
-1
V
IC=-500mA, IB=-50mA
VBE(on)
Base to Emitter Voltage
-
-
-1.5
V
VCE=-5V, IC=-150mA
*hFE1
DC Current Transfer Ratio 1
60
-
200
VCE=-5V, IC=-150mA
*hFE2
DC Current Transfer Ratio 2
30
-
-
VCE=-5V, IC=-500mA
Gain Bandwidth Product
-
140
-
MHz VCE=-5V, IC=-150mA
Collector Output Capacitance
-
20
-
ICBO
fT
Cob
pF
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank
B
C
Range
60-120
100-200
HSB647A
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200201
Issued Date : 2002.01.01
Revised Date : 2005.02.14
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
10000
hFE @ VCE=5V
VCE(s at) @ IC=10IB
Saturation Volltage (mV)
o
hFE
125 C
o
25 C
100
o
75 C
1000
o
125 C
100
o
o
25 C
75 C
10
10
1
10
100
1
1000
10
Collector Current-IC (mA)
100
1000
Collector Current-IC (mA)
ON Voltage & Collector Current
Cutoff Frequency & Collector Current
1000
1000
o
75 C
o
Cutoff Frequency (MHZ)...
ON Voltage (mV)
125 C
o
25 C
fT @ VCE=5V
VBE(on) @ VCE=5V
100
100
1
10
100
0.1
1000
1
Collector Current-IC (mA)
10
100
Collector Current-IC (mA)
Capacitance & Reverse-Biased Voltage
Power Derating
100
1000
Power Dissipation-PD (mW)
Capacitance (pF)
900
Cob
10
800
700
600
500
400
300
200
100
0
1
0.1
1
10
Reverse Biased Voltage (V)
HSB647A
100
0
20
40
60
80
100
120
140
160
o
Ambient Temperature-Ta ( C)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200201
Issued Date : 2002.01.01
Revised Date : 2005.02.14
Page No. : 3/4
MICROELECTRONICS CORP.
TO-92 Dimension
A
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
B
1
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Marking:
α2
2
H
SB
6 4 7 A
3
Control Code
Date Code
α3
Note: Green label is used for pb-free packing
C
Pin Style: 1.Emitter 2.Collector 3.Base
D
H
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
G
Min.
4.33
4.33
12.70
0.36
3.36
0.36
-
Max.
4.83
4.83
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
*: Typical, Unit: mm
α1
I
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
H2
H2A H2A
H2
D2
A
H3
H4 H
L
L1
H1
W1
W
D1
F1F2
T2
T
T1
P1
P
P2
D
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB647A
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200201
Issued Date : 2002.01.01
Revised Date : 2005.02.14
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
HSB647A
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification