HI-SINCERITY Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/5 MICROELECTRONICS CORP. HSD882S NPN Epitaxial Planar Transistor Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature ........................................................................................................................................ 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 750 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .............................................................................................................................................. 40 V VCEO Collector to Emitter Voltage........................................................................................................................................... 30 V VEBO Emitter to Base Voltage ................................................................................................................................................... 5 V IC Collector Current.................................................................................................................................................................. 3 A Electrical Characteristics (T =25°C) A Symbol Min. Typ. Max. Unit Test Conditions BVCBO 40 - - V IC=100uA, IE=0 BVCEO 30 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=10uA, IC=0 ICBO - - 1 uA VCB=30V, IE=0 IEBO - - 1 uA VEB=3V, IC=0 *VCE(sat) - - 0.5 V IC=2A, IB=200mA *VBE(sat) - - 2 V IC=2A, IB=200mA *hFE1 30 - - *hFE2 160 - 500 fT - 90 - MHz Cob - 45 - pF VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE2 Rank P E Range 160-320 250-500 HSD882S HSMC Product Specification HI-SINCERITY Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 2/5 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 1000 1000 o 125 C o Saturation Voltage (mV) 75 C o hFE 25 C 100 o 75 C 100 o 25 C o 125 C hFE @ VCE=2V VCE(sat) @ IC=10IB 10 10 1 10 100 1000 10000 1 10 Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 o 75 C 100 o 125 C o 25 C Saturation Voltage (mV) 1000 o 75 C 100 o 25 C o 125 C VCE(sat) @ IC=40IB VCE(sat) @ IC=20IB 10 10 1 10 100 1000 10000 1 Collector Current-IC (mA) 10 100 1000 10000 Collector Current-IC (mA) Saturation Voltage & Collector Current Capacitance & Reverse-Biased Voltage 10000 100 Capacitance (pF) Saturation Voltage (mV) 1000 Saturation Voltage & Collector Current 1000 Saturation Voltage (mV) 100 Collector Current-IC (mA) o 75 C 1000 o 25 C Cob o 125 C VBE(sat) @ IC=10IB 100 10 1 10 100 1000 Collector Current-IC (mA) HSD882S 10000 0.1 1 10 100 Reverse-Biased Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 3/5 MICROELECTRONICS CORP. Safe Operating Area Cutoff Frequency & Collector Current 100 1000 Collector Current (mA) Cutoff Frequency (MHz).. PT=1ms 10 PT=100ms PT=1s 1 0.1 VCE=5V 0.01 100 1 10 100 1000 Collector Curren (mA) 1 10 100 Forward Biased Voltage (V) Power Derating 800 Power Dissipation-PD (mW) 700 600 500 400 300 200 100 0 0 50 100 150 200 o Ambient Temperature-Ta( C) HSD882S HSMC Product Specification HI-SINCERITY Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 4/5 MICROELECTRONICS CORP. TO-92 Dimension A Pb Free Mark Pb-Free: " . " (Note) Normal: None B 1 DIM A B C D E F G H I α1 α2 α3 Marking: α2 2 H SD 8 8 2 S 3 Control Code Date Code α3 Note: Green label is used for pb-free packing C Pin Style: 1.Emitter 2.Collector 3.Base D H Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 G Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5° *2° *2° *: Typical, Unit: mm α1 I E F 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension H2 H2A H2A H2 D2 A H3 H4 H L L1 H1 W1 W D1 F1F2 T2 T T1 P1 P P2 D DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD882S HSMC Product Specification HI-SINCERITY Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time Pb devices. 245oC ±5oC 10sec ±1sec Pb-Free devices. 260oC ±5oC 10sec ±1sec Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o 60~150 sec 240 C +0/-5 C Peak Temperature (TP) o 3. Flow (wave) soldering (solder dipping) Products HSD882S HSMC Product Specification