HI-SINCERITY Spec. No. : HA200111 Issued Date : 2001.12.01 Revised Date : 2005.02.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386A LOW FREQUENCY TRANSISTOR (-20V, -4A) Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) TO-92 • Excellent DC current gain characteristics. Structure Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings (TA=25°C) Symbol Parameter Limits Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V -4 A IC Collector Current -10 A(Pulse)* PD Collector Power Dissipation (Ta=25oC) 750 mW Tj Junction Temperature 150 o C -55~+150 o C Tstg Storage Temperature Electrical Characteristics (TA=25°C) Symbol Parameter Min. Typ. Max. Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -30 - - V IC=-50uA BVCEO Collector-Emitter B reakdown Voltage -20 - - V IC=-1mA BVEBO Emitter-Base Breakdown Voltage -6 ICBO Collector Cutoff Current - - -0.5 uA VCB=-20V IEBO Emitter Cutoff Current - - -0.5 uA VEB=-5V Collector-Emitter Saturation Voltage - - -1 V IC/IB=-4A/-0.1A 82 - 580 *VCE(sat) *hFE DC Current Transfer Ratio IC=-50uA fT Transition Frequency - 110 - Cob Output Capacitance - 30 - VCE=-2V, IC=-0.5A MHz VCE=-6V, IE=50mA, f=30MHz pF VCB=-20V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank P Q R E Range 82-180 120-270 180-390 370-580 HSB1386A HSMC Product Specification HI-SINCERITY Spec. No. : HA200111 Issued Date : 2001.12.01 Revised Date : 2005.02.14 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 1000 Saturation Voltage (mV) hFE 1000 hFE @ VCE=2V 100 VCE(sat) @ IC=20IB 100 VCE(sat) @ IC=40IB 10 1 1 10 100 1000 10000 1 Collector Current-IC (mA) 100 1000 10000 Collector Current-IC (mA) Saturation Voltage & Collector Current Capacitance & Reverse-Biased Voltage 10000 1000 Capacitance (pF) Saturation Voltage (mV) 10 1000 VBE(sat) @ IC=20IB 100 100 Cob 10 1 10 100 1000 10000 Collector Current-IC (mA) 0.1 1 10 100 Reverse Biased Voltage (V) Power Derating 800 PD(mW) , Power Dissipation 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 o Ta( C) , Ambient Temperature HSB1386A HSMC Product Specification HI-SINCERITY Spec. No. : HA200111 Issued Date : 2001.12.01 Revised Date : 2005.02.14 Page No. : 3/4 MICROELECTRONICS CORP. TO-92 Dimension A Pb Free Mark Pb-Free: " . " (Note) Normal: None B 1 DIM A B C D E F G H I α1 α2 α3 Marking: α2 2 H SB 1 3 8 6 A 3 Control Code Date Code α3 Note: Green label is used for pb-free packing C Pin Style: 1.Emitter 2.Collector 3.Base D H Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 G Min. 4.33 4.33 12.70 0.36 3.36 0.36 - Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27 *5° *2° *2° *: Typical, Unit: mm α1 I E F 3-Lead TO-92 Plastic Package HSMC Package Code: A TO-92 Taping Dimension H2 H2A H2A H2 D2 A H3 H4 H L L1 H1 W1 W D1 F1F2 T2 T T1 P1 P P2 D DIM A D D1 D2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB1386A HSMC Product Specification HI-SINCERITY Spec. No. : HA200111 Issued Date : 2001.12.01 Revised Date : 2005.02.14 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HSB1386A o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification