HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004.12.21 Page No. : 1/5 MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM117 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................... 1.2 W Total Power Dissipation (Printed circuit board 2mm thick, collector plating 1cm2 square or larger) ....................................................... 1.6 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage...................................................................................................................... -100 V BVCEO Collector to Emitter Voltage................................................................................................................... -100 V BVEBO Emitter to Base Voltage............................................................................................................................. -5 V IC Collector Current (Continue) ............................................................................................................................ -4 A IC Collector Current (Peak) .................................................................................................................................. -6 A Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -100 - - V IC=-1mA BVCEO -100 - - V IC=-30mA ICBO - - -1 mA VCB=-100V ICEO - - -2 mA VCE=-50V IEBO - - -2 mA VEB=-5V *VCE(sat) - - -2.5 V IC=-2A, IB=-8mA *VBE(on) - - -2.8 V IC=-2A, VCE=-4V *hFE1 1 - - K IC=-1A, VCE=-4V *hFE2 500 - - Cob - - 200 IC=-2A, VCE=-4V pF VCB=-10V, f=0.1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HM117 HSMC Product Specification HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004.12.21 Page No. : 2/5 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 10000 100000 hFE @ VCE=3V Saturation Voltage (mV) 1000 hFE hFE @ VCE=4V 100 10 10000 VCE(sat) @ IC=100IB 1000 VCE(sat) @ IC=250IB 1 1 10 100 1000 100 100 10000 1000 Collector Current-IC (mA) Saturation Voltage & Collector Current On Voltage & Collector Current 10000 10000 VBE(sat) @ IC=250IB On Voltage (mV) Saturation Voltage (mV) 10000 Collector Current-IC (mA) VBE(sat) @ IC=100IB 1000 VBE(on) @ VCE=3V 1000 VBE(on) @ VCE=4V 100 100 100 1000 1 10000 Collector Current-IC (mA) 10 100 1000 10000 Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage Switching Time & Collector Current 1000 10 Capacitance (pF) Switching Time (us) VCC=30V, IC=250IB1=-250IB2 Tstg 1 Tf 100 Cob Ton 0.1 10 1 10 Collector Current (A) HM117 0.1 1 10 100 Reverse-Biased Voltage (V) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004.12.21 Page No. : 3/5 Safe Operating Area 100000 PT=1ms Collector Current-IC (mA) 10000 PT=100ms PT=1s 1000 100 10 1 1 10 100 1000 Forward Voltage-VCE (V) HM117 HSMC Product Specification HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004.12.21 Page No. : 4/5 MICROELECTRONICS CORP. SOT-89 Dimension C DIM A B C D E F G H I Marking: H Date Code Control Code Pb Free Mark H 1 1 7 D B 1 2 3 E Note: Green label is used for pb-free packing J F Pb-Free: " " (Note) Normal: None G A I Pin Style: 1.Base 2.Collector 3.Emitter Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Min. 4.40 4.05 1.50 2.40 0.36 *1.50 *3.00 1.40 0.35 Max. 4.60 4.25 1.70 2.60 0.51 1.60 0.41 *: Typical, Unit: mm 3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code: M Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM117 HSMC Product Specification HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004.12.21 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HM117 o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification