ETC FLM7179-8F

FLM7179-8F
C-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 39.5dBm (Typ.)
High Gain: G1dB = 9.0dB (Typ.)
High PAE: ηadd = 35% (Typ.)
Low IM3 = -46dBc@Po = 28.5dBm
Broad Band: 7.1 ~ 7.9GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The FLM7179-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
42.8
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
3400 5200
mA
Test Conditions
Transconductance
gm
VDS = 5V, IDS = 2200mA
-
3400
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS = 170mA
-0.5
-1.5
-3.0
V
IGS = -170µA
-5.0
-
-
V
38.5
39.5
-
dBm
8.0
9.0
-
dB
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Power-added Efficiency
Idsr
ηadd
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 7.1 ~ 7.9 GHz,
ZS=ZL= 50 ohm
-
2200 2600
mA
-
35
-
%
-
-
±0.6
dB
-44
-46
-
dBc
Gain Flatness
∆G
3rd Order Intermodulation
Distortion
IM3
f = 7.9 GHz, ∆f = 10 MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
Thermal Resistance
Rth
Channel to Case
-
3.0
3.5
°C/W
∆Tch
10V x Idsr x Rth
-
-
80
°C
Channel Temperature Rise
CASE STYLE: IB
Edition 1.2
August 2004
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
1
FLM7179-8F
C-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER & IM3 vs. INPUT POWER
40
34
30
20
10
0
50
100
150
200
VDS=10V
f1 = 7.9 GHz
f2 = 7.91 GHz
2-tone test
32
-25
Pout
30
-30
28
-35
26
-40
IM3
24
-45
22
-50
20
-55
IM3 (dBc)
36
Output Power (S.C.L.) (dBm)
Total Power Dissipation (W)
50
Case Temperature (°C)
18
13
-60
15
17
19
21
23
25
27
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. FREQUENCY
41
VDS=10V
f = 7.5 GHz
Pin=31.5dBm
29.5dBm
39
38
27.5dBm
37
36
25.5dBm
39
Pout
37
45
35
33
30
ηadd
15
31
35
29
7.1
7.3
7.5
7.7
7.9
0
21
Frequency (GHz)
23
25
27
29
Input Power (dBm)
2
31
ηadd (%)
40
Output Power (dBm)
Output Power (dBm)
VDS=10V
41
P1dB
FLM7179-8F
C-Band Internally Matched FET
S11
S22
+j50
S21
S12
+90°
+j100
+j25
7.6
7.7
7.5
7.3
10
7.5
7.4
7.6
7.7
7.4
7.6 7.7
7.8
7.5
7.2
7.9
50Ω
7.4
8.0
8.1
7.1
7.3
7.2 7.1
7.0
-j10
7.8
+j250
7.6
7.7
7.8
7.0
6.9 GHz
250
180°
7.9
7.9
7.2
1
7.3
3
7.2
-j250
8.1
7.1
8.0
4
0°
SCALE FOR |S21|
8.1
7.0
6.9 GHz
8.1
6.9 GHz
0.1
7.0
-j25
2
8.0
7.1
8.0
7.9
7.8
7.3
-j100
0.2
SCALE FOR |S12|
0
7.5
7.4
+j10
6.9 GHz
-90°
-j50
S11
S-PARAMETERS
VDS = 10V, IDS = 2200mA
S21
S12
MAG
ANG
MAG
ANG
FREQUENCY
(MHZ)
MAG
6900
.583
8.7
3.108
-71.7
.091
7000
.504
-18.5
3.141
-97.1
7100
.410
-47.7
3.170
7200
.323
-85.2
7300
.259
7400
ANG
S22
MAG
ANG
-112.1
.373
-95.0
.097
-134.9
.343
-125.7
-122.4
.102
-158.3
.318
-159.5
3.217
-149.4
.105
175.8
.311
161.9
-128.8
3.251
-176.6
.104
151.2
.331
123.8
.237
-177.4
3.232
156.3
.101
127.2
.373
91.6
7500
.245
139.5
3.214
129.9
.098
102.8
.420
66.0
7600
.262
103.7
3.188
103.9
.095
79.5
.461
44.1
7700
.261
71.7
3.133
78.3
.089
56.0
.496
24.5
7800
.237
40.0
3.094
52.8
.086
31.9
.524
6.3
7900
.199
4.2
3.065
27.4
.081
8.1
.554
-11.2
8000
.151
-44.6
3.037
1.9
.077
-15.5
.586
-28.4
8100
.161
-110.9
2.989
-24.9
.072
-41.8
.616
-45.4
3
FLM7179-8F
C-Band Internally Matched FET
2.0 Min.
(0.079)
Case Style "IB"
Metal-Ceramic Hermetic Package
1
0.1
(0.004)
2
12.9±0.2
(0.508)
2-R 1.6±0.15
(0.063)
3
2.6±0.15
(0.102)
2.0 Min.
(0.079)
0.6
(0.024)
5.2 Max.
(0.205)
1.45
(0.059)
0.2 Max.
(0.008)
10.7
(0.421)
1. Gate
2. Source (Flange)
3. Drain
12.0
(0.422)
Unit: mm(inches)
17.0±0.15
(0.669)
21.0±0.15
(0.827)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
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