RU80T4H N-Channel Advanced Power MOSFET Features Pin Description • 80V/4A, D2 RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =80mΩ(Typ.)@VGS=4.5V RDS (ON) =90mΩ(Typ.)@VGS=2.5V D2 D1 D1 • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G2 S2 G1 pin1 S1 SOP-8 D1 Applications D2 • DC/DC Converters G1 G2 S1 S2 Dual N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 VGSS Gate-Source Voltage ±16 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 2.3 A TA=25°C 16 A TA=25°C 4 TA=70°C 3.2 TA=25°C 2 TA=70°C 1.3 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD RθJC RθJA ③ Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 62.5 °C/W - mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 1 www.ruichips.com RU80T4H Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU80T4H Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 80 V VDS=80V, VGS=0V 1 TJ=125°C VGS(th) IGSS Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±16V, VDS=0V VGS=10V, IDS=4A ⑤ RDS(ON) Drain-Source On-state Resistance VGS=4.5V, IDS=3.2A VGS=2.5V, IDS=2A µA 30 0.4 1 V ±100 nA 70 80 mΩ 80 100 mΩ 90 120 mΩ 1.2 V Diode Characteristics VSD ⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=4A, VGS=0V ISD=3A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 35 ns 68 nC Ω ⑥ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.8 Ciss Input Capacitance 820 Coss Output Capacitance VGS=0V, VDS=40V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 40 td(ON) Turn-on Delay Time 11 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg 15 ns 30 18 ⑥ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=40V, RL=13Ω, IDS=3A, VGEN=10V, RG=6Ω pF 65 17 VDS=64V, VGS=10V, IDS=3A nC 3.8 4.9 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 2 www.ruichips.com RU80T4H Ordering and Marking Information Device Marking Package RU80T4H RU80T4H SOP-8 Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 Packaging Quantity Reel Size Tape width Tape&Reel 3 2500 13’’ 12mm www.ruichips.com RU80T4H Typical Characteristics Power Dissipation Drain Current 5 ID - Drain Current (A) PD - Power (W) 3 2 1 4 3 2 1 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 150 175 RDS(ON) - On - Resistance (mΩ) 300 RDS(ON) limited ID - Drain Current (A) 125 Ids=4A 250 200 150 1 10µs 100µs 1ms 10ms 0.1 100 DC 0.01 100 Drain Current Safe Operation Area 10 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) TA=25°C 0.1 50 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance 1000 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse RθJA=62.5°C/W 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 4 www.ruichips.com RU80T4H Typical Characteristics Output Characteristics Drain-Source On Resistance 150 10V 5V RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 20 120 4V 15 10 3V 5 1V 0 0 1 2 3 4 90 60 10V 30 0 5 0 2 4 VDS - Drain-Source Voltage (V) 8 10 Source-Drain Diode Forward 10 VGS=10V IDS=4A 2.0 IS - Source Current (A) Normalized On Resistance 6 ID - Drain Current (A) Drain-Source On Resistance 2.5 4.5V 2.5V 1.5 1.0 0.5 TJ=25°C Rds(on)=70mΩ TJ=150°C 1 TJ=25°C 0.1 0.01 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 1200 Ciss 900 600 Coss Crss 1 1 1.2 1.4 Gate Charge 1500 0 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 300 0.6 10 100 10 VDS=64V IDS=3A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 5 10 15 20 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 5 www.ruichips.com RU80T4H Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 6 www.ruichips.com RU80T4H Package Information SOP-8 D E E1 L C e θ SYMBOL A A1 A2 b c D E E1 e L θ A A2 A1 b MM MIN 1.300 0.050 1.350 0.330 0.170 4.700 3.800 5.800 0.400 0° Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 NOM 1.525 0.150 1.450 0.420 0.210 4.900 3.900 6.000 1.270 BSC 0.835 INCH MAX 1.750 0.250 1.550 0.510 0.250 5.100 4.000 6.200 MIN 0.051 0.002 0.053 0.013 0.007 0.185 0.150 0.228 1.270 8° 0.016 0° 7 NOM 0.060 0.006 0.057 0.017 0.008 0.193 0.154 0.236 0.050 BSC 0.033 MAX 0.069 0.010 0.061 0.020 0.010 0.201 0.157 0.244 0.050 8° www.ruichips.com RU80T4H Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 8 www.ruichips.com