RU30P3B

RU30P3B
P-Channel Advanced Power MOSFET
Features
Pin Description
• -30V/-3.5A,
RDS (ON) =50mΩ(Typ.)@VGS=-10V
RDS (ON) =80mΩ(Typ.)@VGS=-4.5V
D
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
SOT23
D
Applications
• Load Switch
G
S
P-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TA=25°C
-1
A
TA=25°C
-14
A
TA=25°C
-3.5
TA=70°C
-2.8
TA=25°C
1
TA=70°C
0.64
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=-10V)
IDP
ID
PD
RθJC
RθJA
③
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
A
W
-
°C/W
125
°C/W
TBD
mJ
Drain-Source Avalanche Ratings
EAS
④
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
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RU30P3B
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU30P3B
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
Zero Gate Voltage Drain Current
-30
V
VDS=-30V, VGS=0V
-1
TJ=125°C
VGS(th)
IGSS
⑤
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance
µA
-30
-1
-1.6
-2.5
V
±100
nA
VGS=-10V, IDS=-3.5A
50
80
mΩ
VGS=-4.5V, IDS=-2.8A
80
130
mΩ
-1.2
V
Diode Characteristics
VSD
⑤
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=-1A, VGS=0V
ISD=-3.5A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
7
ns
3
nC
Ω
⑥
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
0.6
Ciss
Input Capacitance
550
Coss
Output Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
50
td(ON)
Turn-on Delay Time
5
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
13
ns
25
9
⑥
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=-15V, IDS=-3.5A,
VGEN=-10V,RG=6Ω
pF
95
12
VDS=-24V, VGS=-10V,
IDS=-3.5A
nC
1.3
2.5
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③When mounted on 1 inch square copper board, t≤10sec. The value in any given application
depends on the user's specific board design.
④Limited by TJmax. Starting TJ = 25°C.
⑤Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
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RU30P3B
Ordering and Marking Information
Device
Marking①
Package
RU30P3B
DXYWW
SOT23
Packaging Quantity Reel Size Tape width
Tape&Reel
3000
7’’
8mm
① The following characters could be different and means:
X
=Assembly site code
Y
=Year
WW =Work Week
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
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RU30P3B
Typical Characteristics
Power Dissipation
Drain Current
4
-ID - Drain Current (A)
PD - Power (W)
2
1
3
2
1
VGS=-10V
0
0
0
25
50
75
100
125
150
25
175
50
150
175
RDS(ON) - On - Resistance (mΩ)
300
10µs
100µs
1ms
10ms
1
Ids=-3.5A
200
150
100
DC
0.1
0.01
125
250
RDS(ON) limited
-ID - Drain Current (A)
10
100
Drain Current
Safe Operation Area
100
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
TA=25°C
0.01
0.1
50
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
-VGS - Gate-Source Voltage (V)
-VDS - Drain-Source Voltage (V)
ZthJA - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
100
10
1
Single Pulse
0.1
RθJA=125°C/W
0.01
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
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RU30P3B
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
300
-8V
-10V
RDS(ON) - On Resistance (mΩ)
-ID - Drain Current (A)
15
250
12
-6V
-4.5V
200
9
150
-3V
6
-4.5V
100
3
-1V
0
0
1
2
3
4
-10V
50
0
5
0
2
4
-VDS - Drain-Source Voltage (V)
10
Source-Drain Diode Forward
10
VGS=-10V
ID=-3.5A
2.0
-IS - Source Current (A)
Normalized On Resistance
8
-ID - Drain Current (A)
Drain-Source On Resistance
2.5
6
1.5
1.0
0.5
TJ=25°C
Rds(on)=50mΩ
1
TJ=150°C
TJ=25°C
0.1
0.01
0.0
0.2
-50
-25
0
25
50
75
100
125
150
0.4
Capacitance
-VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
800
Ciss
400
Coss
Crss
0
1
1
1.2
1.4
Gate Charge
1000
200
0.8
-VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
600
0.6
10
100
-VDS - Drain-Source Voltage (V)
10
VDS=-24V
IDS=-3.5A
9
8
7
6
5
4
3
2
1
0
0
5
10
15
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
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RU30P3B
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
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RU30P3B
Package Information
SOT23
D
b
θ
L
E
E1
L1
0.25
C
e1
A2
A
A1
e
SYMBOL
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
MM
MIN
0.900
0.050
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.400
0°
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
NOM
1.025
0.075
0.975
0.400
0.115
2.900
1.300
2.400
0.950 TYP
1.900
0.540 REF
0.500
*
INCH
MAX
1.150
0.100
1.020
0.500
0.150
3.000
1.400
2.550
MIN
0.035
0.002
0.035
0.012
0.003
0.110
0.047
0.089
2.000
0.071
0.600
8°
0.016
0°
7
NOM
0.040
0.003
0.038
0.016
0.005
0.114
0.051
0.094
0.037 TYP
0.075
0.021 REF
0.018
*
MAX
0.045
0.004
0.040
0.020
0.006
0.118
0.055
0.100
0.079
0.020
8°
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℃
RU30P3B
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
8
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