RU40P3C P-Channel Advanced Power MOSFET Features Pin Description • -40V/-3A, RDS (ON) =100mΩ(Typ.)@VGS=-10V RDS (ON) =150mΩ(Typ.)@VGS=-4.5V D • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 D Applications • Load Switch •DC/DC Converter G S P-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C -1.5 A TA=25°C -12 A TA=25°C -3 TA=70°C -2.2 TA=25°C 1.3 TA=70°C 0.8 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=-10V) IDP ID PD RθJC RθJA ③ Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 100 °C/W - mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 1 www.ruichips.com RU40P3C Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU40P3C Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current -40 V VDS=-40V, VGS=0V -1 TJ=125°C VGS(th) IGSS ⑤ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance µA -30 -1.3 -2.5 V ±100 nA VGS=-10V, IDS=-3A 100 120 mΩ VGS=-4.5V, IDS=-2.4A 150 180 mΩ -1 V Diode Characteristics VSD ⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=-1A, VGS=0V ISD=-1A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 12 ns 7 nC Ω ⑥ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.2 Ciss Input Capacitance 560 Coss Output Capacitance VGS=0V, VDS=-20V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Qg 8 VDD=-20V, RL=20Ω, IDS=-1A, VGEN=-10V, RG=6Ω 13 ns 25 12 ⑥ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 55 Turn-off Fall Time Gate Charge Characteristics pF 95 12 VDS=-32V, VGS=-10V, IDS=-1A nC 2.6 3.8 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 2 www.ruichips.com ℃ RU40P3C Ordering and Marking Information Device Marking① Package RU40P3C 9XYWW SOT23-3 Packaging Quantity Reel Size Tape width Tape&Reel 3000 7’’ 8mm ① The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 3 www.ruichips.com ℃ RU40P3C Typical Characteristics Power Dissipation Drain Current 4 -ID - Drain Current (A) PD - Power (W) 2 1 3 2 1 VGS=-10V 0 0 0 25 50 75 100 125 150 25 175 50 RDS(ON) - On - Resistance (mΩ) DC 0.1 175 Ids=-3A 0.1 300 200 100 TA=25°C 0.01 150 500 10µs 100µs 1ms 10ms 1 0.01 125 400 RDS(ON) limited -ID - Drain Current (A) 10 100 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse 0.1 RθJA=100°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 4 www.ruichips.com ℃ RU40P3C Typical Characteristics Output Characteristics 12 RDS(ON) - On Resistance (mΩ) -6V -10V -ID - Drain Current (A) Drain-Source On Resistance 500 400 9 -4.5V 300 6 -3V -4.5V 200 3 -10V 100 -1V 0 0 1 2 3 4 0 5 0 5 -VDS - Drain-Source Voltage (V) Source-Drain Diode Forward 10 VGS=-10V ID=-3A 2.0 -IS - Source Current (A) Normalized On Resistance 15 -ID - Drain Current (A) Drain-Source On Resistance 2.5 10 1.5 1.0 0.5 TJ=25°C Rds(on)=100mΩ TJ=150°C 1 TJ=25°C 0.1 0.01 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance -VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 800 Ciss 400 Coss Crss 0 1 1 1.2 1.4 Gate Charge 1000 200 0.8 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 600 0.6 10 100 -VDS - Drain-Source Voltage (V) 10 VDS=-32V IDS=-1A 9 8 7 6 5 4 3 2 1 0 0 5 10 15 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 5 www.ruichips.com ℃ RU40P3C Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 6 www.ruichips.com ℃ RU40P3C Package Information SOT23-3 D b θ E E1 L 0.2 C e1 A2 A A1 e SYMBOL A A1 A2 b c D E E1 e e1 L θ MM MIN 1.050 0.000 1.050 0.300 0.100 2.820 1.500 2.650 1.800 0.300 0° Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 NOM 1.150 0.050 1.100 0.400 0.150 2.920 1.600 2.800 0.950 BSC 1.900 0.450 4° INCH MAX 1.250 0.100 1.150 0.500 0.200 3.020 1.700 2.950 MIN 0.041 0.000 0.041 0.012 0.004 0.111 0.059 0.104 2.000 0.600 8° 0.071 0.012 0° 7 NOM 0.045 0.002 0.043 0.016 0.006 0.115 0.063 0.110 0.037 BSC 0.075 0.018 4° MAX 0.049 0.004 0.045 0.020 0.008 0.119 0.067 0.116 0.079 0.024 8° www.ruichips.com ℃ RU40P3C Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. B– MAR., 2013 8 www.ruichips.com