RU602B

RU602B
N-Channel Advanced Power MOSFET
Features
Pin Description
• 60V/1.5A,
RDS (ON) =220mΩ(Typ.)@VGS=10V
D
• Low RDS (ON)
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
G
S
SOT23
D
Applications
• DC/DC Converter
• Battery Switch
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
150
°C
-55 to 150
°C
TA=25°C
1.1
A
TA=25°C
6
A
TA=25°C
1.5
TA=70°C
1.2
TA=25°C
1
TA=70°C
0.64
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=10V)
IDP
ID
PD
RθJC
RθJA
③
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
A
W
-
°C/W
125
°C/W
TBD
mJ
Drain-Source Avalanche Ratings
EAS
④
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2013
1
www.ruichips.com
RU602B
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU602B
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
60
V
VDS=60V, VGS=0V
1
TJ=125°C
VGS(th)
IGSS
⑤
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance VGS=10V, IDS=1A
µA
30
2
3
220
4
V
±100
nA
250
mΩ
1.2
V
Diode Characteristics
VSD
⑤
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=1A, VGS=0V
ISD=1A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
23
ns
17
nC
Ω
⑥
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
1.5
Ciss
Input Capacitance
195
Coss
Output Capacitance
VGS=0V,
VDS=30V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
14
td(ON)
Turn-on Delay Time
8
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
11
ns
18
7
⑥
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=30V, IDS=1A,
VGEN=10V,RG=1Ω
pF
26
6.5
VDS=48V, VGS=10V,
IDS=1A
nC
1.3
2.3
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③When mounted on 1 inch square copper board, t≤10sec. The value in any given application
depends on the user's specific board design.
④Limited by TJmax. Starting TJ = 25°C.
⑤Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2013
2
www.ruichips.com
RU602B
Ordering and Marking Information
Device
Marking①
Package
RU602B
3XYWW
SOT23
Packaging Quantity Reel Size Tape width
Tape&Reel
3000
7’’
8mm
① The following characters could be different and means:
X
=Assembly site code
Y
=Year
WW =Work Week
Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2013
3
www.ruichips.com
RU602B
Typical Characteristics
1.6
1.4
1.0
ID - Drain Current (A)
PD - Power (W)
Drain Current
Power Dissipation
1.2
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
VGS=10V
0.0
0.0
0
25
50
75
100
125
150
175
25
10µs
100µs
1ms
10ms
0.01
0.001
DC
TA=25°C
0.01
0.1
100
125
150
175
1000
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
ID - Drain Current (A)
0.1
75
Drain Current
Safe Operation Area
1
50
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
Ids=1A
800
600
400
200
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJA - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
100
10
1
Single Pulse
0.1
RθJA=125°C/W
0.01
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2013
4
www.ruichips.com
RU602B
Typical Characteristics
Output Characteristics
5
4
RDS(ON) - On Resistance (mΩ)
8V
10V
ID - Drain Current (A)
Drain-Source On Resistance
1000
6V
5V
3
4V
2
1
3V
0
0
1
2
3
4
800
600
400
10V
200
0
5
0
1
2
VDS - Drain-Source Voltage (V)
5
Source-Drain Diode Forward
10
VGS=10V
IDS=1A
2.0
-IS - Source Current (A)
Normalized On Resistance
4
ID - Drain Current (A)
Drain-Source On Resistance
2.5
3
1.5
1.0
0.5
TJ=25°C
Rds(on)=220mΩ
1
TJ=150°C
TJ=25°C
0.1
0.01
0.0
0.2
-50
-25
0
25
50
75
100
125
150
0.4
Capacitance
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
400
300
Ciss
200
Coss
Crss
1
1
1.2
1.4
Gate Charge
500
0
0.8
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
100
0.6
10
100
10
VDS=48V
IDS=1A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
2
4
6
8
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2013
5
www.ruichips.com
RU602B
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2013
6
www.ruichips.com
RU602B
Package Information
SOT23
D
b
θ
L
E
E1
L1
0.25
C
e1
A2
A
A1
e
SYMBOL
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
MM
MIN
0.900
0.050
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.400
0°
Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2013
NOM
1.025
0.075
0.975
0.400
0.115
2.900
1.300
2.400
0.950 TYP
1.900
0.540 REF
0.500
*
INCH
MAX
1.150
0.100
1.020
0.500
0.150
3.000
1.400
2.550
MIN
0.035
0.002
0.035
0.012
0.003
0.110
0.047
0.089
2.000
0.071
0.600
8°
0.016
0°
7
NOM
0.040
0.003
0.038
0.016
0.005
0.114
0.051
0.094
0.037 TYP
0.075
0.021 REF
0.018
*
MAX
0.045
0.004
0.040
0.020
0.006
0.118
0.055
0.100
0.079
0.020
8°
www.ruichips.com
RU602B
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. B– SEP., 2013
8
www.ruichips.com