RU30P4C6 P-Channel Advanced Power MOSFET Features Pin Description • -30V/-4A, S RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =75mΩ(Typ.)@VGS=-4.5V D • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) D G D D SOT23-6 D Applications • Load Switch •DC/DC Converter G S P-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C -1.2 A TA=25°C -16 A TA=25°C -4 TA=70°C -3.2 TA=25°C 1.3 TA=70°C 0.8 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=-10V) IDP ID PD RθJC RθJA ③ Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 100 °C/W TBD mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 1 www.ruichips.com RU30P4C6 Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU30P4C6 Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current -30 V VDS=-30V, VGS=0V -1 TJ=125°C VGS(th) IGSS ⑤ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance µA -30 -1 -3 V ±100 nA VGS=-10V, IDS=-4A 50 70 mΩ VGS=-4.5V, IDS=-3A 75 100 mΩ -1.2 V Diode Characteristics VSD ⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=-1A, VGS=0V ISD=-4A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 21 ns 10 nC 1 Ω ⑥ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 65 td(ON) Turn-on Delay Time 8 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg pF 130 17 ns 24 10 ⑥ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=-15V, IDS=-4A, VGEN=-10V,RG=6Ω 520 9 VDS=-24V, VGS=-10V, IDS=-4A nC 2.2 2.9 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 2 www.ruichips.com RU30P4C6 Ordering and Marking Information Device Marking① Package RU30P4C6 FXYWW SOT23-6 Packaging Quantity Reel Size Tape width Tape&Reel 3000 7’’ 8mm ① The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 3 www.ruichips.com RU30P4C6 Typical Characteristics Power Dissipation Drain Current 5 4 -ID - Drain Current (A) PD - Power (W) 2 1 3 2 1 VGS=-10V 0 0 0 25 50 75 100 125 150 25 175 50 10µs 100µs 1ms 10ms DC 0.1 TA=25°C 0.01 150 175 Ids=-4A 150 1 0.01 125 200 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited -ID - Drain Current (A) 10 100 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 0.1 100 50 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse 0.1 RθJA=100°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 4 www.ruichips.com RU30P4C6 Typical Characteristics Output Characteristics Drain-Source On Resistance 200 -10V RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) 20 -6V -4.5V 15 150 10 -4.5V 100 -3V 5 -1V 0 0 1 2 3 4 50 -10V 0 5 0 5 -VDS - Drain-Source Voltage (V) Source-Drain Diode Forward 10 VGS=-10V IDS=-4A 2.0 -IS - Source Current (A) Normalized On Resistance 15 -ID - Drain Current (A) Drain-Source On Resistance 2.5 10 1.5 1.0 0.5 TJ=25°C Rds(on)=50mΩ 1 TJ=150°C TJ=25°C 0.1 0.01 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance -VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 800 Ciss 400 Coss Crss 0 1 1 1.2 1.4 Gate Charge 1000 200 0.8 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 600 0.6 10 100 -VDS - Drain-Source Voltage (V) 10 VDS=-24V IDS=-4A 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 5 www.ruichips.com RU30P4C6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 6 www.ruichips.com RU30P4C6 Package Information D b SOT23-6 θ E E1 L 0.2 C e1 SYMBOL A A1 A2 b c D E E1 e e1 L θ A A2 A1 e MM MIN 0.950 0.000 0.940 0.300 0.080 2.800 1.500 2.650 1.800 0.300 0° Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 INCH NOM 1.150 0.060 1.100 0.400 0.140 2.900 1.600 2.800 0.950BSC 1.900 0.450 4° 7 MAX 1.450 0.150 1.300 0.500 0.200 3.020 1.700 2.950 MIN 0.037 0.000 0.037 0.012 0.003 0.110 0.059 0.104 2.000 0.600 8° 0.071 0.012 0° NOM 0.045 0.002 0.044 0.016 0.006 0.114 0.063 0.110 0.037BSC 0.075 0.018 4° MAX 0.057 0.006 0.051 0.020 0.008 0.119 0.067 0.116 0.079 0.024 8° www.ruichips.com RU30P4C6 Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2013 8 www.ruichips.com