PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. A PN Diode is added for applications where a freewheeling diode is required. This product has tin plated leads. Superior gate charge x Rdson product (FOM) Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Excellent for high frequency dc/dc converters Optimized for Secondary Rectification in isolated DC-DC Low Rg and low Cds for high speed switching Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules DPAK Lead-free Pin Assignments D G D G S S N – Channel Power JFET with PN Diode Pin Definitions Pin Number 1 2 3 Pin Name Gate Drain Source Pin Function Description Gate. Transistor Gate Drain. Transistor Drain Source. Transistor Source VDS (V) 24V Product Summary Rdson (Ω) 0.0065 ID (A) 501 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 Ω) Junction Temperature Storage Temperature Lead Soldering Temperature, 10 seconds Power Dissipation (Derated at 25°C) Symbol VDS VGS VGD ID ID EAS Ratings 24 -12 -28 501 100 200 Units V V V A A mJ TJ TSTG T PD -55 to 150°C -65 to 150°C 260°C 69 °C °C °C W LD1014D Rev 1.05 03-05 Thermal Resistance Symbol RΘJA RΘJC Parameter Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case DPAK Ratings 90 1.8 Units °C/W °C/W Electrical Specifications (TA = +25°C, unless otherwise noted.) The φ denotes a specification which apply over the full operating temperature range. Symbol Parameter Conditions Min. Static BVDSX Breakdown Voltage ID = 0.5 mA 24 Drain to Source VGS= -4 V BVGDO Breakdown Voltage IG = -50µA Gate to Drain BVGSO Breakdown Voltage IG = -50µA Gate to Source RDS(ON) Drain to Source On IG = 40 mA, ID=10A Resistance2 IG = 10 mA, ID=10A IG = 5 mA, ID=10A VGS(TH) Gate Threshold Voltage VDS=0.1 V, ID=250µA TCVGSTH Temperature Coefficient of VDS=0.1 V, ID=250µA Gate Threshold Voltage Dynamic QGsync Total Gate Charge Sync JFET ∆VDrive =5V,VDS=0.1V (Fig. 2) QG Total Gate Charge ∆VDrive =5V, ID=10A,VDS=15V QGD Gate to Drain Charge VDS=13.5V to VDS=1.5V QGS Gate to Source Charge VGS =-4.5V to VDS=13.5V QSW Switching Charge VGS =-2V to VDS=1.5V RG Gate Resistance TD(ON) Turn-on Delay Time VDD=15V, ID=10A TR Rise Time VDrive = 5 V TD(OFF) Turn-off Delay Resistive Load TF Fall Time CISS Input Capacitance COSS Output Capacitance VDS=10V, VGS= -5 V, 1MHz. CGS Gate-Source Capacitance (see Fig. 4) CGD Gate-Drain Capacitance CDS Drain-Source Capacitance PN Diode IR Reverse Leakage VR=20V, Vgs = -4V VF Forward Voltage IF = 1 A VF Forward Voltage IF = 10 A VF Forward Voltage IF = 20 A Qrr Reverse Recovery Charge Is = 10 A di/dt = 100A/us, Trr Reverse Recovery Time Is = 10 A di/dt = 100A/us, Notes: 1. Current is limited by bondwire; with an Rthjc = 1.8 oC/W the chip is able to carry 80A. 2. Pulse width <= 500µs, duty cycle < = 2% 2 LD1014D Typ. Max. 28 Units V -32 -28 V -14 -12 V 4.6 4.8 4.9 -1 -2.6 6.5 7.0 mΩ mΩ V mV/oC 9.8 12.4 8.1 4.3 9.1 0.7 5.5 12.6 10.3 6.6 1147 467 784 363 104 nC nC nC nC nC Ω ns pF 0.3 812 932 1010 7 13.3 mA mV mV mV nC ns Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) LD1014D, Qg vs Vgs, VDS=0.1V. 8 1.0 RDS(mOhms) 7 0.5 0.0 6 -0.5 -1.0 Vgs(V) 5 4 -1.5 -2.0 -2.5 3 -3.0 -3.5 2 1.0E-05 -4.0 1.0E-04 1.0E-03 1.0E-02 1.0E-01 -4.5 1 IG(A) 3 7 11 13 15 Figure 2 – Gate Charge Qgsync for VDS=0.1V 50 LD1014D Capacitance vs. Vds, Vgs=-5v 45 1600 40 1400 35 1200 25 1000 C (pF) 30 20 15 10 Ciss 800 600 Coss 400 5 Crss 200 0 0 5 10 15 20 25 0 30 0 5 10 10 Figure 3 – Breakdown Voltage Vds vs Id 20 20 25 25 Figure 4 – Capacitance vs Drain Voltage Vds ID vs VGS, VDS=12V and VDS=0.1V 0.10 0.09 0.08 0.07 0.06 ID(A) 0.05 0.04 0.03 0.02 0.01 0.00 0.00 15 15 Vds (volts) V D S (V ) IG(A) 9 Qg(nC) Figure 1 – RDSON vs Gate Current at ID – 10A ID (mA) 5 0.20 0.40 VGS(V) Figure 5 – IG vs Gate Voltage VGS 0.60 0.80 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 VDS = 12V VDS = 0.1V -5 -4 -3 -2 VGS(V) -1 0 1 Figure 6 – Transfer Characteristic Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1014D Product Specification 3 Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) 1.8 50 1.6 40 1.5 35 1.4 1.3 ID vs VDS LD1014D, Tc = 25 o C I G = 1µA 45 ID(A) Normalized Rds 1.7 I G = 1mA V GS = 0.5V V GS = 0V 30 25 V G S =- 0.5V 20 15 1.2 10 1.1 V G S = -1V 5 1.0 0 0 50 T emp(C) 100 150 0 Figure 7 – RDSON =f(T); ID = -10A; IG = 40mA 1 2 VDS(V) 3 4 Figure 8 – ID vs VDS Characteristics 0 100 10µs -4 -6 Id, Drain Current (A) ID (Amps) -2 -8 -10 -12 -14 -16 -18 -20 -1.10 Ig = 40mA Single Pulse Tc = 25°C 10 10ms DC Rdson Limit Thermal Limit Package Limit 1 -1.00 -0.90 -0.80 -0.70 -0.60 0.1 -0.50 Figure 9 – PN Diode Voltage vs Current 1 10 100 Vds, Drain-to-Source Voltage (V) Figure 10 – Safe Operating Area Total Power Dissipation (W) 75 100µs 1ms VDS (Volts) ZthJA = f(tp) (parameter D= tp/T) 1.E+00 60 D = 0.5 0.2 45 ZthJA (K/W) Ptot (W) 5 30 15 0.1 1.E-01 P(pk) 0.05 tp 0.02 T Note: 1. Duty Factor D = tp/T 2. Peak Tj = P(pk)*ZthJA + TA 0.01 Single Pulse 0 0 50 100 150 Temperature (C) Figure 11 – Total Power Dissipation 4 LD1014D 200 1.E-02 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 tp (s) Figure 12 – Normalized Thermal Response Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Ordering Information Product Number LD1014D PN Marking LD1014D Package TO252 (DPAK) Notes: This product is Pb-Free and has Tin Plated leads Package and Marking Information: DIMENSIONS 5.40 1.25 2.60 9.65 5.60 1.75 2.80 9.75 0.213 0.049 0.102 0.380 E LD1014D XXXXX XXXX DPAK L2 B2 D MAX. 0.094 0.045 0.005 0.045 0.035 0.215 0.023 0.023 0.245 A C2 A2 L4 R A1 e C b 0.265 0.410 0.050 0.140 0.040 b1 Back View D1 inch MAX. TYP. MIN. 2.40 0.086 1.14 0.035 0.13 0.001 1.14 0.030 0.90 0.022 5.46 0.205 0.60 0.017 0.58 0.017 6.22 0.235 0.208 6.73 0.250 0.090 10.42 0.368 1.27 0.035 3.57 0.073 1.02 0.025 0.008 L3 A A1 A2 b b1 B2 C C2 D D1 E e H L2 L3 L4 R Alternate D L2 L3 H mm. TYP. MIN. 2.19 0.89 0.03 0.76 0.55 5.20 0.45 0.45 5.97 5.30 6.35 2.28 9.35 0.88 1.86 0.64 0.20 H DIM. 0.220 0.069 0.110 0.384 Life Support Policy LOVOLTECH’s PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein: 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status In definition or in Design Initial Production No Identification Needed In Production Definition This datasheet contains the design specifications for product development. Specifications may change without notice. This datasheet contains preliminary data; additional and application data will be published at a later date. Lovoltech, Inc. reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design. Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1014D Product Specification 5